Semiconductor device including flip-flop circuit which includes transistors
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of high manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced.
1. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, and a seventh transistor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the sixth transistor and a first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the fifth transistor,
wherein a gate of the first transistor is electrically connected to a gate of the fifth transistor,
wherein the first wiring has a function of transmitting a signal which is output from a circuit comprising the first to seventh transistors,
wherein, in a top view, a first conductive layer, a second conductive layer, and a third conductive layer are arranged so that the first conductive layer having a function of the gate of the first transistor is electrically connected to the third conductive layer having a function of a gate of the second transistor, through the second conductive layer which has functions of one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, and one of a source and a drain of the seventh transistor,
wherein one of a source and a drain of the second transistor is directly connected to a gate of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a second wiring,
wherein the other of the source and the drain of the third transistor is electrically connected to the second wiring,
wherein the gate of the third transistor is directly connected to a gate of the sixth transistor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the second wiring, and
wherein the second transistor comprises a channel formation region which is over and overlap with the third conductive layer.
2. A semiconductor device comprising:
a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, and a seventh transistor,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the sixth transistor and a first wiring,
wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the fifth transistor,
wherein a gate of the first transistor is electrically connected to a gate of the fifth transistor,
wherein the first wiring has a function of transmitting a signal which is output from a circuit comprising the first to seventh transistors,
wherein, in a top view, a first conductive layer, a second conductive layer, and a third conductive layer are arranged so that the first conductive layer having a function of the gate of the first transistor is electrically connected to the third conductive layer having a function of a gate of the second transistor, through the second conductive layer which has functions of one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, and one of a source and a drain of the seventh transistor,
wherein the first conductive layer is electrically connected to the third conductive layer without through a semiconductor layer,
wherein one of a source and a drain of the second transistor is directly connected to a gate of the third transistor,
wherein the other of the source and the drain of the second transistor is electrically connected to a second wiring,
wherein the other of the source and the drain of the third transistor is electrically connected to the second wiring,
wherein the gate of the third transistor is directly connected to a gate of the sixth transistor,
wherein the other of the source and the drain of the fourth transistor is electrically connected to the second wiring, and
wherein the second transistor comprises a channel formation region which is over and overlap with the third conductive layer.