High voltage field effect transistors with self-aligned silicide contacts and methods for making the same

1. A semiconductor structure including a first field effect transistor, the first field effect transistor comprising:

a first doped well located within a substrate and embedding a first buried source region and a first buried drain region;

a first gate dielectric and a first gate electrode overlying the first doped well;

a dielectric capping mask including a vertically-extending portion that laterally surrounds the first gate electrode, a top portion that overlies a peripheral region of a top surface of the first gate electrode, and a horizontally-extending portion that contacts a top surface of the first doped well and comprises a source-side opening overlying the first buried source region and a drain-side opening overlying the first buried drain region;

a first source-side metal-semiconductor alloy portion electrically connected to the first buried source region, and having a larger horizontal cross-sectional area than the first buried source region; and

a first drain-side metal-semiconductor alloy portion electrically connected to the first buried drain region, and having a larger horizontal cross-sectional area than the first buried drain region.

2. The semiconductor structure of claim 1 , wherein the first field effect transistor further comprises:

a first raised source region contacting a top surface of the first buried source region and comprising a portion located within the source-side opening; and

a first raised drain region contacting a top surface of the first buried drain region and comprising a portion located within the drain-side opening.

3. The semiconductor structure of claim 2 , wherein:

the first doped well comprises a first single crystalline semiconductor material;

the first buried source region and the first buried drain region comprise a second single crystalline semiconductor material and are epitaxially aligned to the first single crystalline semiconductor material; and

the first raised source region and the first raised drain region comprise a third single crystalline semiconductor material and are epitaxially aligned to the first buried source region or the first buried drain region.

4. The semiconductor structure of claim 2 , wherein a horizontal interface between the first raised source region and the first buried source region and a horizontal interface between the first raised drain region and the first buried drain region are located within a horizontal plane including a top surface of the first doped well.

5. The semiconductor structure of claim 2 , wherein:

the first raised source region comprises a horizontally-extending portion contacting a first segment of a top surface of the horizontally-extending portion of the dielectric capping mask; and

the first raised drain region comprises a horizontally-extending portion contacting a second segment of the top surface of the horizontally-extending portion of the dielectric capping mask.

6. The semiconductor structure of claim 5 , wherein:

the raised source region has a larger horizontal cross-sectional area than the first buried source region;

the raised drain region has a larger horizontal cross-sectional area than the first buried drain region;

a top periphery of the first buried source region is located entirely within a periphery of the first raised source region in a plan view along a direction that is perpendicular to a top surface of the substrate; and

a top periphery of the first buried drain region is located entirely within a periphery of the first raised drain region.

7. The semiconductor structure of claim 5 , further comprising a shallow trench isolation structure laterally surrounding a portion of the first doped well, wherein at least one of the first source-side metal-semiconductor alloy portion, the first drain-side metal-semiconductor alloy portion, the first raised source region, or the first raised drain region comprises a portion having an areal overlap with the shallow trench isolation structure.

8. The semiconductor structure of claim 5 , wherein each of the first source-side metal-semiconductor alloy portion and the first drain-side metal-semiconductor alloy portion comprises a central region that is vertically spaced from the horizontally-extending portion of the dielectric capping mask, and comprises a peripheral region contacting a respective annular surface segment of the top surface of the dielectric capping mask.

9. The semiconductor structure of claim 1 , wherein:

the first source-side metal-semiconductor alloy portion comprises a portion located within the source-side opening and contacting the first buried source region; and

the first drain-side metal-semiconductor alloy portion comprises a portion located within the drain-side opening and contacting the first buried drain region.

10. The semiconductor structure of claim 1 , further comprising a second field effect transistor that comprises:

a second buried source region and a second buried drain region embedded within the first doped well or a second doped well and having top surfaces within a horizontal plane that includes top surface of the first buried source region and the first buried drain region;

a second source-side metal-semiconductor alloy portion electrically connected to the second buried source region and overlying the second buried source region; and

a second drain-side metal-semiconductor alloy portion electrically connected to the second buried drain region and overlying the second buried drain region, wherein:

an entirety of a top surface of the second buried source region contacts a raised source region or the second source-side metal-semiconductor alloy portion; and

an entirety of a top surface of the second buried drain region contacts a raised drain region or the second drain-side metal-semiconductor alloy portion.