3D semiconductor memory device and structure
A 3D semiconductor device including: a first single crystal layer with first transistors; overlaid by a first metal layer; a second metal layer overlaying the first metal layer and being overlaid by a third metal layer; a logic gates including at least the first metal layer interconnecting the first transistors; second transistors disposed atop the third metal layer; third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, and at least four memory mini arrays, where each of the memory mini arrays includes at least four rows by four columns of memory cells, where each of the memory cells includes at least one of the second transistors or third transistors, sense amplifier circuit(s) for each of the memory mini arrays, the second metal layer provides a greater current carrying capacity than the third metal layer.
1. A 3D semiconductor device, the device comprising:
a first single crystal layer comprising a plurality of first transistors;
a first metal layer overlaying said first single crystal layer;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a plurality of logic gates comprising at least said first metal layer interconnecting said plurality of first transistors;
a plurality of second transistors disposed atop said third metal layer;
a plurality of third transistors disposed atop said plurality of second transistors;
a top metal layer disposed atop said plurality of third transistors; and
a memory array comprising word-lines,
wherein said memory array comprises at least four memory mini arrays,
wherein each of said memory mini arrays comprises at least four rows by four columns of memory cells,
wherein each of said memory cells comprises at least one of said plurality of second transistors or at least one of said plurality of third transistors,
wherein said first single crystal layer comprises at least one sense amplifier circuit for each of said memory mini arrays, and
wherein said second metal layer provides a greater current carrying capacity than said third metal layer; and
a connection path between said top metal and said third metal,
wherein said connection path comprises a via through said memory array.
2. The 3D semiconductor device according to claim 1 ,
wherein each row of said memory cells is controlled by at least one of said word-lines, and
wherein each of said word-lines is controlled by at least one of said plurality of logic gates.
3. The 3D semiconductor device according to claim 1 ,
wherein at least one of said plurality of second transistors is self-aligned to at least one of said plurality of third transistors, being processed following a same lithography step.
4. The 3D semiconductor device according to claim 1 ,
wherein at least one of said plurality of second transistors comprises a metal gate.
5. The 3D semiconductor device according to claim 1 ,
wherein at least one of said plurality of third transistors is a junction-less transistor,
wherein said junction-less transistor comprises a source, a channel, and a drain, and
wherein said source, said channel, and said drain have a same dopant type.
6. The 3D semiconductor device according to claim 1 , further comprising:
an upper level disposed atop said top metal layer,
wherein said upper level comprises a mono-crystalline silicon layer.
7. The 3D semiconductor device according to claim 1 ,
wherein said second metal layer provides a greater current carrying capacity than said third metal layer.
8. A 3D semiconductor device, the device comprising:
a first single crystal layer comprising a plurality of first transistors;
a first metal layer overlaying said first single crystal layer;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a plurality of logic gates comprising at least said first metal layer interconnecting said plurality of first transistors;
a plurality of second transistors disposed atop said third metal layer;
a plurality of third transistors disposed atop said plurality of second transistors;
a top metal layer disposed atop said plurality of third transistors;
a memory array comprising word-lines,
wherein said memory array comprises at least four memory mini arrays,
wherein each of said memory mini arrays comprises at least four rows by four columns of memory cells,
wherein each of said memory cells comprises at least one of said plurality of second transistors or at least one of said plurality of third transistors,
wherein said first single crystal layer comprises at least one sense amplifier circuit for each of said memory mini arrays; and
a connection path between said top metal and said third metal,
wherein said connection path comprises a via through said memory array, and
wherein said via diameter is less than 1 micron.
9. The 3D semiconductor device according to claim 8 ,
wherein each row of said memory cells is controlled by at least one of said word-lines, and
wherein each of said word-lines is controlled by at least one of said plurality of logic gates.
10. The 3D semiconductor device according to claim 8 ,
wherein at least one of said second transistors is self-aligned to at least one of said third transistors, being processed following a same lithography step.
11. The 3D semiconductor device according to claim 8 ,
wherein at least one of said second transistors comprise a metal gate.
12. The 3D semiconductor device according to claim 8 ,
wherein at least one of said third transistors is a junction-less transistor,
wherein said junction-less transistor has a source, a channel, and a drain, and
wherein said source, said channel, and said drain have a same dopant type.
13. The 3D semiconductor device according to claim 8 , further comprising:
an upper level disposed atop said top metal layer,
wherein said upper level comprises a mono-crystalline silicon layer.
14. The 3D semiconductor device according to claim 8 ,
wherein said second metal layer provides a greater current carrying capacity than said third metal layer.
15. A 3D semiconductor device, the device comprising:
a first single crystal layer comprising a plurality of first transistors;
a first metal layer overlay said first single crystal;
a second metal layer overlay said first metal layer;
a third metal layer overlay said second metal layer;
a plurality of logic gates comprising at least said first metal layer interconnecting said plurality of first transistors;
a plurality of second transistors disposed atop said third metal layer;
a plurality of third transistors disposed atop said second transistors;
a top metal layer disposed atop said third transistors; and
a memory array comprising word-lines,
wherein said memory array comprises at least four memory mini arrays,
wherein each of said mini arrays comprises at least four rows by four columns of memory cells,
wherein each of said memory cells comprises at least one of said second transistors or at least one of said third transistors,
wherein said first single crystal layer comprises at least one sense amplifier circuit for each of said memory mini arrays,
wherein at least one of said second transistors is self-aligned to at least one of said third transistors, being processed following a same lithography step; and
a connection path between said top metal and said third metal.
16. The 3D semiconductor device according to claim 15 ,
wherein each row of said memory cells is controlled by at least one of said word-lines, and
wherein each of said word-lines is controlled by at least one of said plurality of logic gates.
17. The 3D semiconductor device according to claim 15 ,
wherein at least one of said second transistors comprise a metal gate.
18. The 3D semiconductor device according to claim 15 ,
wherein at least one of said third transistors is a junction-less transistor,
wherein said junction-less transistor has a source, a channel, and a drain, and
wherein said source, said channel, and said drain have a same dopant type.
19. The 3D semiconductor device according to claim 15 , further comprising:
an upper level disposed atop said top metal layer,
wherein said upper level comprises a mono-crystalline silicon layer.
20. The 3D semiconductor device according to claim 15 ,
wherein said second metal layer provides a greater current carrying capacity than said third metal layer.