Light-emitting device and method for manufacturing the same
An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
1. A semiconductor device comprising:
a pixel portion comprising:
a first transistor;
a color filter layer; and
a partition over the color filter layer; and
a circuit portion comprising:
a second transistor,
wherein the first transistor comprises a first oxide semiconductor layer comprising In, Ga, and Zn, a first source electrode layer, and a first drain electrode layer,
wherein the second transistor comprises a second oxide semiconductor layer comprising In, Ga, and Zn,
wherein the first transistor comprises a first gate electrode layer over a substrate,
wherein the first oxide semiconductor layer is provided over the first gate electrode layer,
wherein the second transistor comprises a second gate electrode layer over the substrate,
wherein the second oxide semiconductor layer is provided below the second gate electrode layer,
wherein a first insulating layer is positioned over the first source and drain electrode layers,
wherein the color filter layer is positioned over the first insulating layer and does not overlap a first channel formation region of the first transistor, and
wherein the partition comprises a region overlapping the first channel formation region.
2. The semiconductor device according to claim 1 , wherein the circuit portion is a protective circuit portion.
3. The semiconductor device according to claim 1 ,
wherein the second transistor comprises a second source electrode layer and a second drain electrode layer, and
wherein the second drain electrode layer is electrically connected to the second gate electrode layer.
4. A semiconductor device comprising:
a first transistor over a first substrate; and
a second transistor over the first substrate,
wherein the first transistor comprises:
a first region;
a second region; and
a third region,
wherein the second transistor comprises:
a fourth region;
a fifth region; and
a sixth region,
wherein each of the first transistor and the second transistor comprises an oxide semiconductor in a channel formation region comprising In, Ga, and Zn,
wherein a structure of the first transistor and a structure of the second transistor are different from each other,
wherein the first transistor is electrically connected to a display element,
wherein the second transistor is provided in a driver circuit portion, and
wherein the first and third regions have a different resistance than the second region overlapping a first gate electrode layer of the first transistor.
5. The semiconductor device according to claim 4 , wherein a partition over a color filter layer overlaps with the channel formation region of the first transistor.