Semiconductor image sensor
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid.
1. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a plurality of pixel sensors;
a first isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other;
a first reflective grid disposed over the first isolation grid on the back side of the substrate;
a dielectric layer covering sidewalls of the first isolation grid and sidewalls of the first reflective grid;
a second isolation grid disposed over the back side of the substrate and overlapping the reflective grid from a plan view; and
a second reflective grid disposed between the second isolation grid and the substrate,
wherein a width of the second isolation grid is greater than a width of the first reflective grid.
2. The BSI image sensor of claim 1 , further comprising a plurality of color filters disposed over the substrate on the back side.
3. The BSI image sensor of claim 2 , wherein the second isolation grid and the second reflective grid are disposed between and separating the color filters from each other.
4. The BSI image sensor of claim 1 , wherein the first reflective grid is disposed between the second reflective grid and the first isolation grid.
5. The BSI image sensor of claim 1 , wherein the second isolation grid comprises an insulating material.
6. The BSI image sensor of claim 1 , wherein the first isolation grid comprises at least an insulating material.
7. The BSI image sensor of claim 1 , wherein the first reflective grid comprises a conductive material.
8. The BSI image sensor of claim 1 , wherein a depth of the first isolation grid is equal to or less than a thickness of the substrate.
9. The BSI image sensor of claim 1 , wherein the second isolation grid and the second reflective grid are separated from the first reflective grid.
10. The BSI image sensor of claim 1 , wherein the second isolation grid and the second reflective grid are in contact with the first reflective grid.
11. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor;
a first hybrid isolation surrounding the pixel sensor in the substrate, and the first hybrid isolation comprising:
a reflective grid disposed in the substrate;
a first isolation grid disposed in the substrate; and
a dielectric layer covering sidewalls of the reflective grid and sidewalls of the first isolation structure; and
a second hybrid grid disposed over the back side of the substrate and overlapping the reflective grid from a plan view,
wherein a thickness of the reflective grid is greater than a thickness of the first isolation grid.
12. The BSI image sensor of claim 11 , wherein a thickness of the first hybrid isolation is equal to a thickness of the substrate.
13. The BSI image sensor of claim 11 , wherein the dielectric layer covers a bottom surface of the first isolation grid.
14. The BSI image sensor of claim 11 , wherein the second hybrid grid comprises a second isolation grid disposed over the substrate on the back side.
15. The BSI image sensor of claim 14 , wherein the reflective grid is disposed between the first isolation grid and the second isolation grid.
16. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor;
a color filter corresponding to the pixel sensor and disposed over the substrate on the back side;
a first isolation grid disposed in the substrate and surrounding the pixel sensor;
a first reflective grid disposed in the substrate and surrounding the pixel sensor;
a dielectric layer covering sidewalls of the first isolation grid and sidewalls of the first reflective grid;
a second isolation grid surrounding the color filter on the back side of the substrate; and
a second reflective grid surrounding the color filter on the back side of the substrate,
wherein the second reflective grid and the first reflective grid and are between the second isolation grid and the first isolation grid.
17. The BSI image sensor of claim 16 , wherein the dielectric layer covers a bottom surface of the first isolation grid.
18. The BSI image sensor of claim 16 , wherein the second isolation grid covers sidewalls and a top surface of the second reflective grid.
19. The BSI image sensor of claim 16 , wherein the first reflective grid is separated from the second reflective grid.
20. The BSI image sensor of claim 16 , wherein the first isolation grid, the first reflective grid, the second isolation grid and the second reflective grid are aligned with each other.