Semiconductor device
A semiconductor device with a high on-state current and high operating speed is provided. The semiconductor device includes a transistor and a first circuit. The transistor includes a first gate and a second gate, and the first gate and the second gate include a region where they overlap each other with a semiconductor layer therebetween. The first circuit includes a temperature sensor and a voltage control circuit. The temperature sensor has a function of obtaining temperature information and outputting the temperature information to the voltage control circuit. The voltage control circuit has a function of converting the temperature information into a control voltage. The first circuit applies the control voltage to the second gate.
1. A semiconductor device comprising:
a transistor comprising a first gate and a second gate;
a voltage generation circuit electrically connected to the second gate of the transistor;
a capacitor, a first electrode of the capacitor is electrically connected to the second gate of the transistor; and
a voltage control circuit electrically connected to a second electrode of the capacitor,
wherein the first gate and the second gate overlap each other with a semiconductor layer therebetween, and
wherein the voltage control circuit is configured to convert a temperature information into a control voltage.
2. The semiconductor device according to claim 1 , wherein the voltage control circuit comprises a microcomputer or an amplifier.
3. The semiconductor device according to claim 1 , wherein the semiconductor layer comprises a metal oxide.
4. A semiconductor device comprising:
a transistor comprising a first gate and a second gate;
a voltage generation circuit electrically connected to the second gate of the transistor;
a capacitor, a first electrode of the capacitor is electrically connected to the second gate of the transistor;
a voltage control circuit electrically connected to a second electrode of the capacitor; and
a temperature sensor configured to obtain a temperature information,
wherein the first gate and the second gate overlap each other with a semiconductor layer therebetween, and
wherein the voltage control circuit is configured to convert the temperature information into a control voltage.
5. The semiconductor device according to claim 4 , wherein the voltage control circuit comprises a microcomputer or an amplifier.
6. The semiconductor device according to claim 4 , wherein the semiconductor layer comprises a metal oxide.