Interconnection structure, fabricating method thereof, and semiconductor device using the same

1. A method comprising:

forming p-type structure and an n-type structure on a substrate;

depositing an isolation layer between the p-type structure and the n-type structure;

forming a first dummy gate on the p-type structure, the first dummy gate leaving portions of the p-type structure exposed;

forming a second dummy gate on the n-type structure, the second dummy gate leaving portions of the n-type structure exposed;

removing an exposed portion of the p-type structure to form a recessed portion of the p-type structure;

removing an exposed portion of the n-type structure to form a recessed portion of the n-type structure;

epitaxially growing a first source/drain region on the recessed portion of the p-type structure;

epitaxially growing a second source/drain region on the recessed portion of the n-type structure;

replacing the first dummy gate and the second dummy gate with a first replacement gate and a second replacement gate, respectively;

depositing a dielectric layer on the first source/drain region and the second source/drain region and patterning the dielectric layer to expose the first source/drain region and the second source/drain region;

depositing a metal layer on the exposed first source/drain region and along sidewalls of the patterned dielectric layer; and

depositing a barrier layer on the metal layer; and

performing an annealing step to form a silicide of the first source/drain region and the metal layer, wherein the silicide contacts the barrier layer after the annealing step.

2. The method of claim 1 , wherein a portion of the metal layer between the barrier layer and the first source/drain region is reacted with the first source/drain region, so that the metal layer is not present between the barrier layer and the silicide after the annealing step.

3. The method of claim 1 , further comprising forming a conductor filling the opening, wherein the conductor is an interconnect structure in the dielectric layer.

4. The method of claim 1 , wherein the annealing step is performed at an annealing temperature less than 700 degrees Celsius for an annealing duration less than 120 seconds.

5. The method of claim 1 , wherein after the annealing step the Si concentration of the silicide varies along a height of the silicide.

6. The method of claim 1 , further comprising:

depositing another metal layer on the exposed second source/drain region and along sidewalls of the patterned dielectric layer;

depositing a second barrier layer on the another metal layer; and

performing an annealing step to form a second silicide of the second source/drain region and the another metal layer.

7. The method of claim 6 , wherein the metal layer and the another metal layer are the same material and wherein the barrier layer and the second barrier layer are the same material.

8. The method of claim 1 , further comprising etching a top portion of the first source/drain region and a second top portion of the second source/drain region.

9. The method of claim 8 , wherein etching a top portion of the first source/drain region and a second top portion of the second source/drain region occurs during the step of patterning the dielectric layer to expose the first source/drain region and a second top portion of the second source/drain region.

10. The method of claim 9 wherein etching a top portion of the first source/drain region smooths a faceted top surface of the first source/drain region.

11. A method comprising:

forming an n-type structure interjacent two p-type structures on a substrate;

forming a gate structure over the n-type structure and the p-type structures, wherein the gate structure leaves uncovered respective source/drain regions of the n-type structure and p-type structures;

depositing a dielectric layer over the respective source/drain regions;

patterning the dielectric layer to form openings therein, the openings exposing the respective source/drain regions;

lining the openings with a metal liner;

lining the metal liner with a barrier layer; and

performing an annealing process to form a silicide of the metal liner and the respective source/drain regions, wherein portions of the metal liner in contact with the respective source/drain regions are fully consumed during the annealing process, and wherein the barrier layer remains unconsumed after the annealing process.

12. The method of claim 11 , further comprising:

recessing one or more of the uncovered respective source/drain regions; and

epitaxially growing semiconductor material on the recessed one or more uncovered respective source/drain regions.

13. The method of claim 12 wherein the epitaxially grown semiconductor material forms a faceted top surface on at least one source/drain region and further comprising etching back the faceted top surface.

14. The method of claim 12 , wherein the step of epitaxially growing semiconductor material on the recessed one or more uncovered respective source/drain regions forms a first source/drain region having a faceted surface and a second source/drain region having a surface that is less faceted than the faceted surface of the first source/drain region.

15. The method of claim 11 , further comprising:

depositing a fill metal onto the silicide to form an electrical contact with the respective source/drain regions.

16. The method of claim 11 , wherein the step of forming an n-type structure interjacent two p-type structures on a substrate includes forming an n-type nanowire.

17. The method of claim 11 , wherein a Si concentration varies in the silicide when progressing from the top to the bottom of the silicide.

18. A device comprising:

an n-type channel-region-containing structure interjacent two p-type channel-region-containing structures;

a gate structure extending over the n-type channel-region-containing structure and the p-type channel-region-containing structures;

each channel-containing region including a respective source/drain region;

a dielectric layer overlying the respective source/drain regions;

each source/drain region having associated therewith a filled contact opening extending through the dielectric layer, the filled contact opening defined by sidewalls of the dielectric layer;

a metal liner extending along and contacting the sidewalls of the dielectric layer;

a metal barrier layer extending along and contacting the metal liner, the metal liner being interjacent the metal barrier layer and the sidewalls of the dielectric layer;

a silicide of the source/drain region and the metal liner at a bottom of the filled contact opening; and

a conductor within the filled contact opening, the metal barrier layer extending between the conductor and the silicide and the metal barrier layer directly contacting the silicide, wherein the metal barrier layer physically prevents the conductor from contacting the silicide.

19. The device of claim 18 , wherein a Si concentration of the silicide decreases along the height of the silicide.

20. The device of claim 18 , wherein the respective channel-containing regions are nanowires formed on a common semiconductor substrate.