Semiconductor device
A device includes a conductive feature, a dielectric layer, a bottom electrode via, and a liner layer. The dielectric layer is over the conductive feature. The bottom electrode via is in the dielectric layer and over the conductive feature. A topmost surface of the bottom electrode via is substantially flat. A liner layer cups an underside of the bottom electrode via. The liner layer has a topmost end substantially level with the topmost surface of the bottom electrode via.
1. A device, comprising:
a conductive feature;
a dielectric layer over the conductive feature;
a bottom electrode via in the dielectric layer and over the conductive feature, wherein a topmost surface of the bottom electrode via is substantially flat; and
a diffusion barrier layer adjoining a bottom of the bottom electrode via, wherein the diffusion barrier layer has a topmost end substantially level with the topmost surface of the bottom electrode via.
2. The device of claim 1 , further comprising:
a resistance switching element over the topmost surface of the bottom electrode via and the topmost end of the diffusion barrier layer.
3. The device of claim 1 , wherein the diffusion barrier layer is in contact with the conductive feature.
4. The device of claim 1 , wherein the topmost end of the diffusion barrier layer is substantially level with a top surface of the dielectric layer.
5. The device of claim 1 , wherein the diffusion barrier layer spaces the bottom electrode via from the dielectric layer.
6. The device of claim 1 , further comprising:
a bottom electrode layer extending across the bottom electrode via and the diffusion barrier layer.
7. A device, comprising:
a conductive feature;
a dielectric layer over the conductive feature;
a bottom electrode via in the dielectric layer and over the conductive feature, wherein the dielectric layer has a first portion surrounding the bottom electrode via and a second portion extending from the first portion of the dielectric layer, and a top surface of the first portion of the dielectric layer is higher than a top surface of the second portion of the dielectric layer;
a diffusion barrier layer between the bottom electrode via and the conductive feature;
a bottom electrode layer over the bottom electrode via and the diffusion barrier layer, wherein a bottom surface of the bottom electrode layer is substantially flat; and
a resistance switching element over the bottom electrode layer;
a top electrode over the resistance switching element; and
a spacer in contact with a sidewall of the resistance switching element, a sidewall of the bottom electrode layer, and a sidewall of the first portion of the dielectric layer.
8. The device of claim 7 , wherein the bottom surface of the bottom electrode layer is in contact with the bottom electrode via and the diffusion barrier layer.
9. The device of claim 7 , wherein the bottom surface of the bottom electrode layer covers the bottom electrode via, the diffusion barrier layer, and the first portion of the dielectric layer.
10. The device of claim 7 , wherein the top surface of the second portion of the dielectric layer is free of coverage by the bottom electrode layer, and the top surface of the second portion of the dielectric layer is lower than the bottom surface of the bottom electrode layer by a step height.
11. The device of claim 7 , wherein the top surface of the first portion of the dielectric layer is in contact with the bottom surface of the bottom electrode layer.
12. The device of claim 7 , wherein an extending direction of the sidewall of the resistance switching element is substantially the same as an extending direction of the sidewall of the bottom electrode layer and an extending direction of the sidewall of the first portion of the dielectric layer.
13. A device, comprising:
a dielectric layer;
a bottom electrode structure embedded in the dielectric layer, the bottom electrode structure comprising tantalum nitride;
a metal via structure providing a conductive pathway to the bottom electrode structure and an underlying interconnect structure, the metal via structure comprising titanium, titanium nitride, tantalum, tantalum nitride, tungsten, or combinations thereof; and
a diffusion barrier layer disposed between the bottom electrode structure and the metal via structure, the diffusion barrier layer comprising titanium nitride, tantalum nitride or combinations thereof.
14. The device of claim 13 , wherein a top surface of the bottom electrode structure is substantially flat, and a top surface of the dielectric layer has a portion substantially level with the top surface of the bottom electrode structure.
15. The device of claim 13 , wherein the diffusion barrier layer adjoins a bottom of the bottom electrode structure.
16. The device of claim 13 , wherein the diffusion barrier layer has a top end substantially level with a top surface of the bottom electrode structure.
17. The device of claim 13 , wherein a top surface of the dielectric layer is free from coverage by the diffusion barrier layer.
18. The device of claim 13 , further comprising:
a resistance switching element over the bottom electrode structure.
19. The device of claim 18 , wherein the resistance switching element has a bottom width greater than a top width of the bottom electrode structure.
20. The device of claim 13 , wherein the diffusion barrier layer is on sidewalls of the bottom electrode structure.