Semiconductor image sensor
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. The first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.
1. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor disposed in the substrate; and the pixel sensor comprising a plurality of first micro structures disposed over the back side of the substrate; and
a color filter disposed over the pixel sensor, and the color filter comprising a plurality of second micro structures disposed over the back side of the substrate,
wherein the first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.
2. The BSI image sensor of claim 1 , wherein the first axial and the second axial are aligned with each other.
3. The BSI image sensor of claim 1 , wherein a sidewall of at least one of the first micro structures and a substrate-horizontal direction comprise at least a first included angle, and a sidewall of at least one of the second micro structures and the substrate-horizontal direction comprise at least a second included angle.
4. The BSI image sensor of claim 3 , wherein the first included angle and the second included angle are different from each other.
5. The BSI image sensor of claim 3 , wherein the first included angle and the second included angle are the same.
6. The BSI image sensor of claim 3 , wherein a sidewall of another one of the first micro structures and the substrate-horizontal direction comprise a third included angle, and the third included angle is different from the first included angle.
7. The BSI image sensor of claim 3 , wherein a sidewall of another one of the second micro structures and the substrate-horizontal direction comprise a fourth included angle, and the fourth included angle is different from the second included angle.
8. The BSI image sensor of claim 1 , further comprises:
a first coating between the substrate and the color filter; and
a second coating extends an entire surface of the front side of the substrate.
9. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor disposed in the substrate; and the pixel sensor comprising a plurality of first micro structures disposed over the back side of the substrate; and
a color filter disposed over the pixel sensor, and the color filter comprising a plurality of second micro structures disposed over the back side of the substrate,
wherein each of the first micro structures is different from each of the second micro structures.
10. The BSI image sensor of claim 9 , wherein a height of each of the first micro structures is different from a height of the second micro structures.
11. The BSI image sensor of claim 9 , wherein a shape of each of the first micro structures is different from a shape of each of the second micro structures.
12. The BSI image sensor of claim 9 , wherein the first micro structures are arranged to form a first pattern, the second micro structures are arranged to form a second pattern, and the first pattern is different from the second pattern.
13. The BSI image sensor of claim 12 , wherein the first pattern is symmetrical to a first axial, and the second pattern is symmetrical to a second axial.
14. The BSI image sensor of claim 13 , wherein the first axial is aligned with the second axial.
15. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a photodiode disposed in the substrate;
a color filter disposed over the back side of the substrate;
a plurality of first micro structures disposed between the photodiode and the color filter;
a plurality of second micro structures disposed over the front side of the substrate; and
a dielectric layer disposed between adjacent second micro structures,
where a surface of the dielectric layer and surfaces of the second micro structures form a flat surface over the front side of the substrate.
16. The BSI image sensor of claim 15 , wherein a shape of each of the first micro structures is different from a shape of each of the second micro structures.
17. The BSI image sensor of claim 15 , wherein a height of each of the first micro structures is different from a height of each of the second micro structures.
18. The BSI image sensor of claim 17 , wherein the height of the first micro structures is greater than the height of the second micro structures.
19. The BSI image sensor of claim 15 , further comprising a first coating between the color filter and the substrate.
20. The BSI image sensor of claim 15 , further comprises a second coating disposed over the flat surface over the front side of the substrate.