Semiconductor device comprising oxide semiconductor layer
An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.
1. A semiconductor device comprising a transistor, the transistor comprising:
an oxide semiconductor layer, in which a channel is formed,
wherein the oxide semiconductor layer comprises In, Sn, Ga, and Zn,
wherein the oxide semiconductor layer comprises a first region comprising crystal grains, in which c-axes are oriented in a direction perpendicular or substantially perpendicular to a surface of the oxide semiconductor layer, in a superficial portion of the oxide semiconductor layer, and
wherein the oxide semiconductor layer comprises a second region comprising an amorphous region which comprises a first microcrystal and a second microcrystal.
2. The semiconductor device according to claim 1 , further comprising:
a first insulating layer, having a region in contact with part of the oxide semiconductor layer, over the oxide semiconductor layer,
wherein the first insulating layer comprises silicon and oxygen.
3. The semiconductor device according to claim 2 , further comprising:
a second insulating layer, comprising nitrogen and silicon, over the first insulating layer.
4. A semiconductor device comprising a transistor, the transistor comprising:
a gate electrode;
a gate insulating layer over the gate electrode; and
an oxide semiconductor layer, in which a channel is formed, over the gate insulating layer,
wherein the oxide semiconductor layer comprises In, Sn, Ga, and Zn,
wherein the oxide semiconductor layer comprises a first region comprising crystal grains, in which c-axes are oriented in a direction perpendicular or substantially perpendicular to a surface of the oxide semiconductor layer, in a superficial portion of the oxide semiconductor layer, and
wherein the oxide semiconductor layer comprises a second region comprising an amorphous region which comprises a first microcrystal and a second microcrystal.
5. The semiconductor device according to claim 4 , further comprising:
a first insulating layer, having a region in contact with part of the oxide semiconductor layer, over the oxide semiconductor layer,
wherein the first insulating layer comprises silicon and oxygen.
6. The semiconductor device according to claim 5 , further comprising:
a second insulating layer, comprising nitrogen and silicon, over the first insulating layer.
7. A semiconductor device comprising a transistor, the transistor comprising:
an oxide semiconductor layer, in which a channel is formed;
a gate insulating layer over the oxide semiconductor layer; and
a gate electrode over the gate insulating layer,
wherein the oxide semiconductor layer comprises In, Sn, Ga, and Zn,
wherein the oxide semiconductor layer comprises a first region comprising crystal grains, in which c-axes are oriented in a direction perpendicular or substantially perpendicular to a surface of the oxide semiconductor layer, in a superficial portion of the oxide semiconductor layer, and
wherein the oxide semiconductor layer comprises a second region comprising an amorphous region which comprises a first microcrystal and a second microcrystal.
8. The semiconductor device according to claim 7 , further comprising:
a first insulating layer, having a region in contact with part of the oxide semiconductor layer, over the oxide semiconductor layer,
wherein the first insulating layer comprises silicon and oxygen.
9. The semiconductor device according to claim 8 , further comprising:
a second insulating layer, comprising nitrogen and silicon, over the first insulating layer.