Wafer level image sensor package

1. A method for forming an image sensor package, comprising:

forming an image sensor chip over a package substrate;

forming a protection layer overlying the image sensor chip, the protection layer having a planar top surface and a bottom surface lining and contacting structures under the protection layer;

forming an opening into the protection layer and spaced around a periphery of the image sensor chip; and

filling a light shielding material in the opening forming an on-wafer shield structure having a sidewall directly contact the protection layer;

wherein the on-wafer shield structure is formed to have a top surface aligned with that of the protection layer.

2. The method according to claim 1 , wherein the on-wafer shield structure is formed to cover an entire sidewall surface of the protection layer.

3. The method according to claim 1 , further comprising:

forming an on-wafer lens having a convex top surface and overlying the image sensor chip before forming the protection layer.

4. The method according to claim 3 , wherein the on-wafer lens is formed with a sidewall that directly contacts that of the on-wafer shield structure.

5. The method according to claim 3 , further comprising:

forming an on-wafer filtering coating on the image sensor chip prior to forming the on-wafer lens;

wherein the on-wafer filtering coating is configured to filter infrared light.

6. The method according to claim 5 , wherein the on-wafer filtering coating is formed with a sidewall that directly contacts that of the on-wafer shield structure.

7. The method according to claim 1 , wherein forming the image sensor chip comprises:

forming a first substrate over the package substrate;

forming a metallization stack over the first substrate;

forming a device layer having a pixel sensing array over the metallization stack;

forming a color filter array over the pixel sensing array; and

forming a micro lens array over the color filter array;

wherein the protection layer directly contacts the micro lens array.

8. The method according to claim 7 , further comprising:

forming a flatness layer between the color filter array and the micro lens array, wherein the flatness layer has a sidewall contacting the on-wafer shield structure.

9. The method according to claim 8 , wherein the on-wafer shield structure is formed with an upper portion wider than or equal to a lower portion.

10. The method according to claim 9 , wherein the lower portion contacts sidewalls of the first substrate, the metallization stack, and the device layer.

11. The method according to claim 9 , wherein the upper portion sits on and has a bottom surface contacting a top surface of the flatness layer.

12. A method for manufacturing an image sensor package, the method comprising:

providing a first substrate having a plurality of pixel sensing arrays formed on a front side and a carrier wafer attached to a back side;

forming a plurality of color filter arrays over the plurality of pixel sensing arrays;

forming a protection layer overlying the plurality of color filter arrays;

forming openings through the protection layer and the first substrate between the color filter arrays;

filling the openings with a light shield material; and

performing a separating process to the light shield material to form a plurality of dies respectively having an on-wafer shield structure spaced around a periphery of the first substrate, the color filter array, and the protection layer.

13. The method according to claim 12 , further comprising:

removing the carrier wafer from the plurality of dies;

attaching module lens to a front side of the plurality of dies; and

forming electrical connection structures to a back side of the plurality of dies.

14. The method according to claim 12 , wherein the openings are formed respectively including a narrower lower portion within the first substrate and a wider upper portion through the protection layer.

15. A method for forming an image sensor package, comprising:

forming a metallization stack over a first substrate;

forming a device layer having a pixel sensing array over the metallization stack;

forming a color filter array over the pixel sensing array;

forming a micro lens array over the color filter array;

forming a protection layer overlying the micro lens array;

forming an opening into the protection layer and spaced around a periphery of the device layer;

filling the openings with a light shield material; and

cutting through the light shield material to form an on-wafer shield structure spaced around a periphery of the first substrate, the color filter array, and the protection layer.

16. The method according to claim 15 , wherein the light shield material is formed with a top surface aligned with that of the protection layer.

17. The method according to claim 15 , further comprising forming an on-wafer lens having a convex top surface and an on-wafer filtering coating configured to filter infrared light on the micro lens array prior to forming the protection layer.

18. The method according to claim 17 , wherein the on-wafer filtering coating is formed with a sidewall that directly contacts that of the on-wafer shield structure.

19. The method according to claim 17 , wherein a bottom surface of the on-wafer filtering coating, the on-wafer lens, or the protection layer is formed aligned with a bottom surface of the on-wafer shield structure.

20. The method according to claim 17 , wherein an upper portion of the on-wafer shield structure is formed wider than a lower portion.