IP Library Granted Patent US 11,776,645
Granted Patent B2
US 11,776,645 · App. 17/314,554 · Granted Oct 3, 2023

Stacked electronic device capable of retaining an analog potential

Inventors: Takayuki Ikeda (Kanagawa, JP); Yoshiyuki Kurokawa (Kanagawa, JP)
G11C27/024G06N3/065H01L27/1225H01L27/1255H01L29/42384H01L29/7869H01L29/78648H01L29/78696
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Quick Facts
Patent No.
US 11,776,645
App. No.
17/314,554
Granted
Oct 3, 2023
Kind
B2
Abstract

An electronic device applicable to an artificial neuron network. The electronic device includes a first circuit, a second circuit, and first to sixth wirings. The first circuit includes a first transistor, a second transistor, and a capacitor. The second circuit includes a third transistor. A gate of the third transistor is electrically connected to the third wiring. The capacitor capacitively couples the third wiring and the gate of the second transistor. The first circuit is capable of storing a weight as an analog value. The first transistor is typically an oxide semiconductor transistor.

Claims (25)

1. An electronic device comprising:

a circuit comprising a first transistor, a second transistor, and a capacitor,

wherein a weight value is input to the capacitor through the first transistor,

wherein an input value is input to the circuit,

wherein an output value based on the weight value and the input value is output through the second transistor,

wherein the first transistor is stacked over the second transistor,

wherein the capacitor is stacked over the first transistor,

wherein the first transistor comprises:

a first gate electrode functioning as a backgate electrode;

a channel formation region over the first gate electrode, the channel formation region comprising an oxide semiconductor; and

a second gate electrode over the channel formation region, the second gate electrode functioning as a front gate electrode,

wherein the first gate electrode and the second gate electrode of the first transistor overlaps with the second transistor, and

wherein the first gate electrode and the second gate electrode of the first transistor overlaps with the capacitor.

2. An electronic component comprising the electronic device according to claim 1 ,

wherein the electronic component is used in digital signal processing, software-defined radio systems, avionic systems, application specific integrated circuit prototyping, medical image processing, sound recognition, encryption, bioinformatics, emulators for mechanical systems, radio telescopes in radio astronomy, or in-car electronic appliances.

3. A semiconductor package comprising the electronic device according to claim 1 ,

wherein the semiconductor package is used in digital signal processing, software-defined radio systems, avionic systems, application specific integrated circuit prototyping, medical image processing, sound recognition, encryption, bioinformatics, emulators for mechanical systems, radio telescopes in radio astronomy, or in-car electronic appliances.

4. The electronic device according to claim 1 ,

wherein one of a source and a drain of the first transistor is electrically connected to a gate electrode of the second transistor and one electrode of the capacitor.

5. The electronic device according to claim 1 ,

wherein the capacitor comprises:

a first electrode;

an insulating film over and in contact with the first electrode, the insulating film comprising an opening; and

a second electrode over and in contact with the insulating film, and

wherein the second electrode is positioned inside the opening of the insulating film.

Priority Claims (1)
JP 2015-103331 · May 21, 2015 · national
Continuity (4)
Continuation 16786038 · Feb 10, 2020
Continuation 16199603 · Nov 26, 2018
Continuation 15158860 · May 19, 2016
Related Publication 20210264998A1 · Aug 26, 2021
Cited By (1)
US 12,389,608