Pellicle for an EUV lithography mask and a method of manufacturing thereof

1. A method of manufacturing a pellicle for an EUV photo mask, the method comprising:

forming a first capping layer over a front surface of a substrate;

forming a matrix layer over the first capping layer;

forming a second capping layer over the matrix layer;

forming a backside coating layer on a back surface of the substrate;

forming a first opening in the backside coating layer by patterning the backside coating layer;

forming a second opening in the substrate by etching the substrate through the first opening; and

forming one or more metallic layers over the second capping layer,

wherein the forming the matrix layer includes:

forming a silicide layer over the first capping layer; and

performing a nitridation operation or an oxidation operation on the silicide layer.

2. The method of claim 1 , wherein the silicide layer is one or more of MoSi or ZrSi.

3. The method of claim 1 , further comprising after the matrix layer is formed, performing an annealing operation at a temperature ranging from 250° C. to 1100° C.

4. The method of claim 1 , wherein the backside coating layer includes one or more layers of silicon oxide, silicon nitride, silicon oxynitride or SiCN.

5. The method of claim 1 , wherein one metallic layer made of Ru or Zr is formed.

6. A method of manufacturing a pellicle for an EUV photo mask, the method comprising:

forming a first layer over a front surface of a substrate;

forming a second layer over the first layer;

forming a third layer over the second layer;

forming a fourth layer over the third layer;

forming a backside opening in a backside of the substrate; and

forming a fifth layer over the fourth layer,

wherein the third layer is one of a bi-layer of a Nb layer on a Mo layer, a Nb layer on a Zr layer or a Mo layer on a C layer, and wherein the fifth layer includes one or more of Mo, Zr, Nb, B, Ti, Ru, MoSi, ZrSi, NbSi or NiZrSi.

7. The method of claim 6 , wherein the first layer and the fourth layer are made of different materials from each other, and are made of one of SiC, SiGe, Ge, silicon oxide, silicon nitride, silicon oxynitride or SiCN.

8. The method of claim 6 , wherein the second layer is made of a semiconductor material.

9. The method of claim 8 , wherein the semiconductor material is one of Si, SiC or SiGe.

10. The method of claim 8 , wherein the semiconductor material is one of polysilicon or amorphous silicon.

11. A method of manufacturing a pellicle for an EUV photo mask, the method comprising:

forming a first capping layer over a front surface of a substrate;

forming a first matrix layer over the first capping layer;

forming a second matrix layer over the first matrix layer;

performing an annealing operation at a temperature ranging from 250° C. to 1100° C.;

forming a second capping layer over the second matrix layer;

forming a backside coating layer on a back surface of the substrate;

forming a first opening in the backside coating layer by patterning the backside coating layer;

forming a second opening in the substrate by etching the substrate through the first opening; and

forming one or more metallic layers over the second capping layer.

12. The method of claim 11 , wherein the first matrix layer is made of a semiconductor material.

13. The method of claim 12 , wherein the semiconductor material is one of Si, SiC or SiGe.

14. The method of claim 12 , wherein the semiconductor material is one of poly silicon or amorphous silicon.

15. The method of claim 12 , wherein the second matrix layer is made of a silicide.

16. The method of claim 15 , wherein the silicide includes one or more of MoSi or ZrSi.

17. The method of claim 15 , wherein the second matrix layer includes one or more of MoSiN, ZrSiN, MoSiO or ZrSiO.

18. The method of claim 11 , wherein a thickness of each of the first matrix layer and the second matrix layer is in a range from 10 nm to 50 nm.

19. The method of claim 11 , wherein the first capping layer and the second capping layer are made of one or more of silicon oxide, silicon nitride, silicon oxynitride, SiC or SiCN.

20. The method of claim 11 , wherein the metallic layer is one or more of a Ru layer, a Mo layer or a Zr layer.