Semiconductor structure
The semiconductor structure includes a plurality of first dies, a plurality of second dies disposed over each of the first dies, and a dielectric material surrounding the plurality of first dies and the plurality of second die. Each of the second dies overlaps a portion of each first die.
1. A semiconductor structure, comprising:
a plurality of first dies in a first level;
a plurality of second dies disposed in a second level over each of the first dies; and
a dielectric material surrounding the plurality of first dies and the plurality of second dies,
wherein each of the second dies in the second level overlaps a portion of each of the first dies in the first level.
2. The semiconductor structure of claim 1 , wherein each of the first dies comprises a plurality of first corners, and each of the second dies overlaps one of the first corners of each of the first dies.
3. The semiconductor structure of claim 1 , wherein each of the first dies comprises a plurality of first sides, each of the second dies comprises a plurality of second sides, and the first sides of the first dies are parallel to the second sides of the second dies.
4. The semiconductor structure of claim 1 , wherein the dielectric material is a molding or includes molding compound.
5. The semiconductor structure of claim 1 , wherein the first dies in the first level are separated from each other, and the second dies in the second level are separated from each other.
6. A semiconductor structure, comprising:
a first die and a second die in a first level;
a third die and a fourth die in a second level over the first level; and
a dielectric material surrounding the first die, the second die, the third die and the fourth die,
wherein the third die overlaps a portion of the second die and exposes a first corner, a second corner and a third corner of the second die, and the fourth die overlaps a portion of the first die and exposes a first corner, a second corner and a third corner of the first die.
7. The semiconductor structure of claim 6 , wherein the fourth die overlaps a fourth corner of the first die, and the third die overlaps a fourth corner of the second die.
8. The semiconductor structure of claim 6 , wherein the first die has a pair of first sides, the second die has a pair of the second sides, and the pair of first sides and the pair of second sides are parallel with each other.
9. The semiconductor structure of claim 8 , wherein the third die has a pair of third sides, the fourth die has a pair of fourth sides, and the pair of third sides and the pair of fourth sides are parallel with each other.
10. The semiconductor structure of claim 9 , wherein the pair of first sides, the pair of second sides, the pair of third sides and the pair of fourth sides are parallel with each other.
11. The semiconductor structure of claim 6 , wherein the dielectric material is a molding or includes molding compound.
12. The semiconductor structure of claim 6 , wherein the first die is exposed through the third die from a top view.
13. The semiconductor structure of claim 6 , wherein the second die is exposed through the fourth die from a top view.
14. A semiconductor structure, comprising:
a first die and a second die in a first level;
a third die and a fourth die in a second level over the first level;
a dielectric material surrounding the first die, the second die, the third die and the fourth die,
wherein the third die overlaps a portion of the first die and a portion of the second die, and the fourth die overlaps another portion of the first die and another portion of the second die.
15. The semiconductor structure of claim 14 , wherein the first die has a pair of first sides, the second die has a pair of second sides, and the pair of first sides is parallel with the pair of second sides.
16. The semiconductor structure of claim 15 , wherein the third die has a pair of third sides, and the pair of third sides is parallel with the pair of first sides and the pair of second sides.
17. The semiconductor structure of claim 15 , wherein the fourth die has a pair of fourth sides, and the pair of fourth sides is parallel with pair of the first sides, the pair of second sides and the pair of third sides.
18. The semiconductor structure of claim 14 wherein the third die overlaps a corner of the first die and a corner of the second die, and the fourth die overlaps another corner of the first die and another corner of the second die.
19. The semiconductor structure of claim 14 , wherein the dielectric material is a molding or includes molding compound.
20. The semiconductor structure of claim 14 , wherein a top view of the first die, the second die, the third die and the fourth die are line symmetric.