Wiring formation method, method for manufacturing semiconductor device, and semiconductor device
According to one embodiment, a wiring fabrication method includes pressing a first template including a first recessed portion and a second recessed portion provided at a bottom of the first recessed portion against a first film to form a first pattern including a first raised portion, corresponding to the first recessed portion, and a second raised portion, corresponding to the second recessed portion. The second raised portion protrudes from the first raised portion once formed. After forming the first pattern, a first wiring, corresponding to the first raised portion, and a via, corresponding to the second raised portion, is formed using the first pattern.
1. A wiring fabrication method, comprising:
pressing a first template, which includes a first recessed portion and a second recessed portion at a bottom of the first recessed portion, against a first film to form a first pattern including a first raised portion, corresponding to the first recessed portion, and a second raised portion, corresponding to the second recessed portion, the second raised portion protruding from the first raised portion;
forming a first wiring, corresponding to the first raised portion, and a via, corresponding to the second raised portion, the via protruding from the first wiring; and
forming a second wiring contacting the via, the via extending between the first wiring and the second wiring, wherein
forming the second wiring comprises:
forming a second conductive material film contacting the via;
forming a second film on the second conductive material film;
forming a second pattern in the second film; and
etching the second conductive material film using the second pattern as a mask to form the second wiring contacting the via.
2. The wiring fabrication method according to claim 1 , wherein
the first pattern is formed on a first conductive material film, and
the first wiring and the via are formed by etching the first conductive material film using the first pattern as a mask.
3. The wiring fabrication method according to claim 1 , wherein
the first film is formed from a photocurable organic material, and
the wiring fabrication method further comprises:
forming a first insulating film to cover the first pattern;
removing portions of the first insulating film to expose a surface of the second raised portion of the first pattern;
removing the first pattern from the first insulating film to form a cavity with the shape of the first pattern in the first insulating film; and
filling the cavity with a conductive material to form the first wiring and the via.
4. The wiring fabrication method according to claim 1 , wherein
the first film is formed from a photocurable organic material, and
the wiring fabrication method further comprises:
infiltrating the first pattern with a metal to form the first wiring and the via.
5. The wiring fabrication method according to claim 1 , wherein
the first film is formed from a photocurable organic material, and
the wiring fabrication method further comprises:
forming a first insulating film covering the first pattern;
exposing an upper surface of the second raised portion of the first pattern by removing portions of the first insulating film; and
infiltrating the first pattern with a metal from the exposed upper surface of the second raised portion to form the first wiring and the via.
6. The wiring fabrication method according to claim 1 , wherein
the first film is a conductive material, and
the first wiring and the via are formed of the conductive material.
7. The wiring fabrication method according to claim 6 , wherein the conductive material is a conductive polymer or a liquid dispersion of metallic particles.