Capacitance reduction for backside power rail device
The present disclosure describes a method to form a backside power rail (BPR) semiconductor device with an air gap. The method includes forming a fin structure on a first side of a substrate, forming a source/drain (S/D) region adjacent to the fin structure, forming a first S/D contact structure on the first side of the substrate and in contact with the S/D region, and forming a capping structure on the first S/D contact structure. The method further includes removing a portion of the first S/D contact structure through the capping structure to form an air gap and forming a second S/D contact structure on a second side of the substrate and in contact with the S/D region. The second side is opposite to the first side.
1. A semiconductor device, comprising:
a source/drain (S/D) region on a substrate;
a capping structure above a first side of the S/D region;
an air gap between the S/D region and the capping structure, wherein the air gap is in contact with the capping structure; and
a S/D contact structure in contact with a second side of the S/D region, wherein the second side is opposite to the first side.
2. The semiconductor device of claim 1 , wherein the air gap is in contact with the first side of the S/D region.
3. The semiconductor device of claim 1 , further comprising a silicide layer on the first side of the S/D region, wherein the silicide layer is between the air gap and the S/D region.
4. The semiconductor device of claim 3 , further comprising a layer of dielectric material in contact with the silicide layer, wherein the air gap is between the layer of dielectric material and the capping structure.
5. The semiconductor device of claim 1 , further comprising a seal structure above the first side of the S/D region, wherein the seal structure, the capping structure, and the S/D region enclose the air gap.
6. The semiconductor device of claim 1 , further comprising an interconnect structure on the second side of the S/D region and in contact with the S/D contact structure.
7. The semiconductor device of claim 1 , wherein the S/D contact structure comprises a silicide layer.
8. A semiconductor device, comprising:
a fin structure on a substrate;
first and second source/drain (S/D) regions in contact with opposite ends of the fin structure;
a first S/D contact structure in contact with the first S/D region;
a capping structure above a first side of the second S/D region;
an air gap between the capping structure and the second S/D region, wherein the air gap is in contact with the capping structure; and
a second S/D contact structure in contact with a second side of the second S/D region, wherein the second side is opposite to the first side.
9. The semiconductor device of claim 8 , further comprising a silicide layer on the first side of the second S/D region, wherein the air gap is in contact with the silicide layer.
10. The semiconductor device of claim 8 , further comprising a seal structure in the capping structure, wherein the seal structure, the capping structure, and the second S/D region enclose the air gap.
11. The semiconductor device of claim 8 , further comprising a seal structure, wherein a first portion of the seal structure is in the capping structure and a second portion of the seal structure is on a bottom surface of the air gap.
12. The semiconductor device of claim 8 , wherein the air gap is in contact with the second S/D region.
13. The semiconductor device of claim 8 , further comprising:
a first interconnect structure in contact with the first S/D contact structure; and
a second interconnect structure in contact with the second S/D contact structure.
14. The semiconductor device of claim 8 , wherein the first S/D contact structure comprises a first silicide layer and a metal contact, and wherein the second S/D contact structure comprises a second silicide layer.
15. A method, comprising:
forming a source/drain (S/D) region on a first side of a substrate;
forming a first S/D contact structure in contact with the S/D region on the first side of the substrate;
forming a capping structure on the first S/D contact structure;
removing at least a portion of the first S/D contact structure through the capping structure to form an air gap between the capping structure and the S/D region; and
forming a second S/D contact structure on a second side of the substrate and in contact with the S/D region, wherein the second side is opposite to the first side.
16. The method of claim 15 , wherein the removing at least the portion of the first S/D contact structure comprises:
forming an opening in the capping structure;
removing the first S/D contact structure through the opening to form the air gap; and
forming a seal structure in the opening to seal the air gap.
17. The method of claim 16 , wherein the forming the seal structure comprises depositing a dielectric material on the capping structure to seal the opening.
18. The method of claim 15 , wherein the first S/D contact structure comprises a metal contact and a silicide layer, and wherein the removing at least the portion of the S/D contact structure comprises:
forming an opening in the capping structure;
removing the metal contact through the opening to form the air gap; and
forming a seal structure in the opening to seal the air gap, wherein the air gap is in contact with the silicide layer.
19. The method of claim 15 , wherein the forming the second S/D contact structure comprises:
replacing the substrate with a dielectric layer;
removing a portion of the S/D region on the second side of the substrate; and
forming a silicide layer in contact with the S/D region on the second side of the substrate.
20. The method of claim 15 , further comprising forming an interconnect structure in contact with the second S/D contact structure.