Semiconductor device
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
1. A semiconductor device comprising:
a first transistor; and
a second transistor,
wherein a channel formation region of the first transistor comprises silicon,
wherein a channel formation region of the second transistor comprises an oxide semiconductor,
wherein a first insulating layer is provided over the channel formation region of the first transistor,
wherein a first gate electrode of the first transistor is provided over the first insulating layer,
wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor via a first opening in a second insulating layer, a second opening in a third insulating layer, a third opening in a fourth insulating layer, a fourth opening in a fifth insulating layer, a fifth opening in the fifth insulating layer, and a sixth opening in the fourth insulating layer,
wherein the one of the source and the drain of the second transistor is in contact with a top surface of a layer which comprises the oxide semiconductor,
wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
2. The semiconductor device according to claim 1 , wherein the second gate electrode of the second transistor is provided on the second insulating layer.
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises indium, gallium, and zinc.
4. The semiconductor device according to claim 1 ,
wherein a conductor electrically connected to the channel formation region of the second transistor extends beyond an end portion of the fifth opening and the sixth opening, and
wherein the conductor overlaps with the first gate electrode of the first transistor.
5. A semiconductor device comprising:
a first transistor; and
a second transistor,
wherein a channel formation region of the first transistor comprises silicon,
wherein a channel formation region of the second transistor comprises an oxide semiconductor,
wherein a first insulating layer is provided over the channel formation region of the first transistor,
wherein a first gate electrode of the first transistor is provided over the first insulating layer,
wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein the one of the source and the drain of the second transistor is in contact with a top surface of a layer which comprises the oxide semiconductor,
wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
6. The semiconductor device according to claim 5 , wherein the second gate electrode of the second transistor is provided on a second insulating layer provided over the first gate electrode.
7. The semiconductor device according to claim 5 , wherein the oxide semiconductor comprises indium, gallium, and zinc.
8. A semiconductor device comprising:
a first transistor; and
a second transistor,
wherein a channel formation region of the first transistor comprises silicon,
wherein a channel formation region of the second transistor comprises an oxide semiconductor,
wherein a first insulating layer is provided over the channel formation region of the first transistor,
wherein a first gate electrode of the first transistor is provided over the first insulating layer,
wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor,
wherein a second insulating layer is in contact with a side surface of a layer which comprises the oxide semiconductor and a top surface of the layer which comprises the oxide semiconductor,
wherein a first opening and a second opening are provided in the second insulating layer,
wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
9. The semiconductor device according to claim 8 , wherein the second gate electrode of the second transistor is provided on a third insulating layer provided over the first gate electrode.
10. The semiconductor device according to claim 8 , wherein the oxide semiconductor comprises indium, gallium, and zinc.
11. The semiconductor device according to claim 8 ,
wherein a third insulating layer is provided over the second insulating layer,
wherein a conductor is provided over the third insulating layer, and
wherein the conductor overlaps with the first gate electrode of the first transistor, the first opening, and the second opening.
12. A semiconductor device comprising:
a first transistor; and
a second transistor,
wherein a channel formation region of the first transistor comprises silicon,
wherein a channel formation region of the second transistor comprises an oxide semiconductor,
wherein a first insulating layer is provided over the channel formation region of the first transistor,
wherein a first gate electrode of the first transistor is provided over the first insulating layer,
wherein the first gate electrode of the first transistor is electrically connected to one of a source and a drain of the second transistor via a first opening in a second insulating layer, a second opening in a third insulating layer, a third opening in a fourth insulating layer, a fourth opening in a fifth insulating layer, a fifth opening in the fifth insulating layer, and a sixth opening in the fourth insulating layer,
wherein the fourth insulating layer is in contact with a side surface of a layer which comprises the oxide semiconductor and a top surface of the layer which comprises the oxide semiconductor,
wherein a second gate electrode of the second transistor is provided below the channel formation region of the second transistor, and
wherein, in a cross-sectional view, the layer which comprises the oxide semiconductor extends beyond an end portion of the second gate electrode.
13. The semiconductor device according to claim 12 , wherein the second gate electrode of the second transistor is provided on the second insulating layer.
14. The semiconductor device according to claim 12 , wherein the oxide semiconductor comprises indium, gallium, and zinc.
15. The semiconductor device according to claim 12 ,
wherein a conductor electrically connected to the channel formation region of the second transistor extends beyond an end portion of the fifth opening and the sixth opening, and
wherein the conductor overlaps with the first gate electrode of the first transistor.