Pixel with strained silicon layer for improving carrier mobility and blue response in imagers
An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.
1. A system, comprising:
an imaging device including at least one pixel cell having a photosensor with a photosensitive region buried at least in part within a substrate such that the photosensitive region is separated from a strained silicon layer by an intermediary portion of the substrate;
a central processing unit operably connected to the imaging device via a first bus; and
a memory component operably connected to the central processing unit via a second bus, wherein:
the memory component is configured to (i) receive, via the first bus or the second bus, a digital image from the imaging device and (ii) store the digital image, and
the central processing unit is configured to (a) receive, via the second bus, the digital image from the memory component and (b) process the digital image.
2. The system of claim 1 , further comprising a memory controller, wherein:
the memory controller is operably connected to the imaging device via the first bus;
the memory controller is operably connected to the central processing unit via a third bus; and
the memory controller is operably connected to the memory component via the second bus.
3. The system of claim 2 , further comprising a primary bus bridge operably connecting the first bus to the second bus.
4. The system of claim 3 , wherein the memory controller and the primary bus bridge are integrated as a single device.
5. The system of claim 3 , further comprising an accelerated graphics port operably connected to the primary bus bridge.
6. The system of claim 1 , wherein the memory component is a memory card, a single inline memory module, or a dual inline memory module.
7. The system of claim 1 , wherein the memory component includes a serial presence detect memory.
8. The system of claim 1 , wherein:
the memory component is a first memory component;
the system further comprises a second memory component operably connected to the central processing unit via a third bus separate from the second bus; and
the second bus and the third bus are configured to be operated in parallel.
9. The system of claim 1 , wherein:
the memory component is a first memory component;
the system further comprises a second memory component operably connected to the central processing unit via a third bus separate from the second bus; and
the third bus is mapped to a different address range than the second bus.
10. The system of claim 1 , further comprising a multimedia processor operably connected to the imaging device via the first bus, wherein the multimedia processor is a sound card or a video capture card.
11. The system of claim 1 , further comprising a universal serial port controller configured to operably connect a universal serial bus device to the imaging device via the first bus.
12. The system of claim 1 , further comprising a storage controller operably connected to the imaging device via the first bus.
13. The system of claim 1 , wherein the system is an audio/video processor, an audio/video recorder, a gaming console, a digital television set, a wireless telephone, a wired telephone, a navigation device, a digital camera, or a digital recorder.
14. The system of claim 1 , wherein the imaging device, the central processing unit, or the memory component is an integrated circuit.
15. A pixel cell, comprising a photosensor having a photosensitive region buried at least in part within a substrate such that the photosensitive region is separated from a strained silicon layer by an intermediary portion of the substrate.
16. The pixel cell of claim 15 , wherein the strained silicon layer is formed in an upper portion of the substrate.
17. The pixel cell of claim 1 , wherein the strained silicon layer includes a top silicon layer formed over a silicon-germanium layer.
18. The pixel cell of claim 15 , wherein the intermediary portion includes an undoped portion of the substrate.
19. The pixel cell of claim 15 , wherein the photosensitive region is buried entirely below the strained silicon layer.
20. An imaging device comprising a plurality of pixel cells, wherein a pixel cell of the plurality of pixels cells includes a photosensitive region buried at least in part within a substrate such that the photosensitive region is separate from a strained silicon layer by an intermediary portion of the substrate.