Image pickup device and electronic apparatus
The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate.
1. A light detecting device comprising:
a semiconductor substrate including a first photoelectric conversion region and a first surface of a light incident side of the semiconductor substrate, wherein the first surface includes a moth-eye structure, the moth-eye structure including:
a first portion including a first angled portion in a cross-sectional view;
a second portion including a first radius of curvature in the cross-sectional view;
a third portion including a second angled portion in the cross-sectional view; and
a fourth portion including a second radius of curvature in the cross-sectional view,
wherein the moth-eye structure is disposed above the first photoelectric conversion region in the cross-sectional view,
wherein the first portion, the second portion, the third portion, and the fourth portion are disposed along at least part of the moth-eye structure in this order in the cross-sectional view,
wherein the second portion and the fourth portion are more curved than the first portion and the third portion,
wherein the second portion comprises a first part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the second portion and a second point on a second sidewall of the second portion across from the first sidewall of the second portion, and
wherein the fourth portion comprises a second part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the fourth portion and a second point on a second sidewall of the fourth portion across from the first sidewall of the fourth portion.
2. The light detecting device according to claim 1 , wherein the first portion and the third portion are closer to the first photoelectric conversion region than the second portion and the fourth portion in the cross-sectional view.
3. The light detecting device according to claim 1 , wherein the second portion and the fourth portion are closer to the first photoelectric conversion region than the first portion and the third portion in the cross-sectional view.
4. The light detecting device according to claim 1 , further comprising:
a first oxide film disposed on the moth-eye structure.
5. The light detecting device according to claim 4 , wherein the first oxide film is rounded at a part corresponding to the second portion and the fourth portion in the cross-sectional view.
6. The light detecting device according to claim 5 , further comprising:
a second oxide film disposed on the first oxide film, wherein the second oxide film is rounded at the part corresponding to the second portion and the fourth portion in the cross-sectional view.
7. The light detecting device according to claim 1 , further comprising:
a second photoelectric conversion region in the semiconductor substrate; and
a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view.
8. The light detecting device according to claim 7 , further comprising:
a light-shielding portion disposed above the trench in the cross-sectional view.
9. The light detecting device according to claim 8 , wherein the light-shielding portion includes metal.
10. The light detecting device according to claim 7 , further comprising:
an insulating film disposed above the first surface of the semiconductor substrate in the cross-sectional view.
11. The light detecting device according to claim 10 , wherein the insulating film is disposed in the trench in the cross-sectional view.
12. The light detecting device according to claim 1 , further comprising:
a wiring layer disposed on a second surface of the semiconductor substrate opposite to the first surface in the cross-sectional view.
13. An electronic apparatus, comprising:
a lens; and
a light detecting device comprising:
a semiconductor substrate including a first photoelectric conversion region and a first surface of a light incident side of the semiconductor substrate, wherein the first surface includes a moth-eye structure, the moth-eye structure including:
a first portion including a first angled portion in a cross-sectional view;
a second portion including a first radius of curvature in the cross-sectional view;
a third portion including a second angled portion in the cross-sectional view;
a fourth portion including a second radius of curvature in the cross-sectional view,
wherein the moth-eye structure is disposed above the first photoelectric conversion region in the cross-sectional view,
wherein the first portion, the second portion, the third portion, and the fourth portion are disposed along at least part of the moth-eye structure in this order in the cross-sectional view,
wherein the second portion and the fourth portion are more curved than the first portion and the third portion,
wherein the second portion comprises a first part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the second portion and a second point on a second sidewall of the second portion across from the first sidewall of the second portion, and
wherein the fourth portion comprises a second part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the fourth portion and a second point on a second sidewall of the fourth portion across from the first sidewall of the fourth portion.
14. The electronic apparatus according to claim 13 , further comprising:
an insulating film disposed above the first surface of the semiconductor substrate in the cross-sectional view.
15. The electronic apparatus according to claim 13 , further comprising:
a wiring layer disposed on a second surface of the semiconductor substrate opposite to the first surface in the cross-sectional view.
16. The electronic apparatus according to claim 13 , further comprising:
a first oxide film disposed on the moth-eye structure.
17. The electronic apparatus according to claim 16 , wherein the first oxide film is rounded at a part corresponding to the second portion and the fourth portion in the cross-sectional view.
18. The electronic apparatus according to claim 17 , further comprising:
a second oxide film disposed on the first oxide film, wherein the second oxide film is rounded at the part corresponding to the second portion and the fourth portion in the cross-sectional view.
19. The electronic apparatus according to claim 13 , further comprising:
a second photoelectric conversion region in the semiconductor substrate; and
a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view.
20. The electronic apparatus according to claim 19 , further comprising:
a light-shielding portion disposed above the trench in the cross-sectional view.