Forming semiconductor structures with two-dimensional materials
A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.
1. A structure, comprising:
a substrate;
a first fin structure over the substrate;
a second fin structure laterally in contact with an edge surface of the first fin structure along a first direction, the second fin structure including a first metal material on a surface of the second fin structure; and
a semiconductor layer of a two-dimensional material on the first fin structure,
wherein the first metal material of the second fin structure is a seed layer with respect to the semiconductor layer of the two-dimensional material.
2. The structure of claim 1 , comprising a dielectric layer between the second fin structure and the substrate.
3. The structure of claim 1 , wherein the second fin structure has a smaller dimension than the first fin structure in the first direction.
4. The structure of claim 1 , wherein the semiconductor layer at least partially on the surface of the second fin structure.
5. The structure of claim 1 , wherein the second fin structure extends beyond the first fin structure in a second direction that is substantially orthogonal to the first direction.
6. The structure of claim 1 , wherein the first metal material is one or more of tungsten, molybdenum, or platinum.
7. The structure of claim 1 , further comprising a third fin structure laterally adjacent to a second edge surface of the first fin structure, the third fin structure including the first metal material on a surface of the third fin structure.
8. The structure of claim 7 , wherein the first metal material of the third fin structure is a seed layer with respect to the semiconductor layer of the two-dimensional material.
9. The structure of claim 1 , wherein the semiconductor layer is two-dimensional tungsten disulfide.
10. The structure of claim 1 , wherein the first fin structure is a dielectric material.
11. A method, comprising:
forming a first fin structure and a second fin structure over a substrate, the second fin structure laterally adjacent to an edge portion of the first fin structure in a first direction, the second fin structure including a first metal material on a surface of the second fin structure; and
forming a semiconductor layer of a two-dimensional material on the first fin structure using the first metal material as a seed.
12. The method of claim 11 , wherein the forming the first fin structure and the second fin structure includes:
forming a dielectric layer of a dielectric material over the substrate;
forming a metal layer of the first metal material over the substrate and in contact with the dielectric layer; and
patterning the dielectric layer and the metal layer together.
13. The method of claim 12 , wherein the forming the first fin structure and the second fin structure includes forming the first fin structure that has a smaller dimension than the second fin structure in a second direction that is traverse to the first direction.
14. The method of claim 11 , wherein the two-dimensional material is WS 2 and the forming the semiconductor layer of the two-dimensional material WS 2 includes using WO 3 powders and sulfur vapor precursor.
15. The method of claim 14 , wherein the forming the second fin structure includes forming the second fin structure that includes the first metal material of one or more of tungsten, molybdenum, or platinum.
16. A device, comprising:
a substrate;
a first fin structure over the substrate;
a second fin structure laterally in contact with an edge surface of the first fin structure along a first direction, the second fin structure including a first metal material on a surface of the second fin structure; and
a semiconductor layer of a two-dimensional material on the first fin structure, the semiconductor layer in contact with the first metal material.
17. The device of claim 16 , wherein the second fin structure is configured to be a source or drain structure.
18. The device of claim 16 , wherein the second fin structure is configured to be a body contact structure.
19. The device of claim 16 , further comprising a gate structure wrapping over the semiconductor layer of the two-dimensional material on the first fin structure.
20. The device of claim 16 , wherein the two-dimensional material is WS 2 .