Etching apparatus and etching method
An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.
1. A plasma processing apparatus comprising:
a plasma processing container;
a workpiece placement table disposed in the plasma processing container;
an electrode disposed in the workpiece placement table;
a DC power supply electrically connected to the electrode; and
a controller configured to control the DC power supply to:
(i) apply a pulsed negative DC voltage to the electrode from the DC power supply; and
(ii) linearly decrease a frequency of the pulsed negative DC voltage applied to the electrode over a plasma processing time.
2. The plasma processing apparatus according to claim 1 , wherein the controller controls the DC power supply to decrease the frequency of the pulsed negative DC voltage applied to the electrode continuously or stepwise.
3. The plasma processing apparatus according to claim 1 , wherein
the controller is configured to control the plasma processing apparatus to etch holes in the workpiece, and
the controller controls the DC power supply to decrease the frequency of the pulsed negative DC voltage applied to the electrode as a depth of the holes becomes deeper.
4. The plasma processing apparatus according to claim 3 , wherein the controller controls the DC power supply to decrease the frequency of the pulsed negative DC voltage applied to the electrode from a first frequency to a second frequency lower than the first frequency at a time point when a predetermined depth of the holes is reached.
5. The plasma processing apparatus according to claim 1 , wherein
the controller is configured to control the plasma processing apparatus to generate ions which are directed toward the workpiece, and
the controller controls the DC power supply to decrease the frequency of the pulsed negative DC voltage applied to the electrode to suppress decreases in rectilinearity of the ions.
6. The plasma processing apparatus according to claim 5 , wherein
the controller is configured to control the plasma processing apparatus to etch holes in the workpiece, and
the controller controls the DC power supply to decrease the frequency of the pulsed negative DC voltage applied to the electrode from a first frequency to a second frequency lower than the first frequency at a time point when a predetermined depth of the holes is reached.
7. The plasma processing apparatus according to claim 6 , wherein the controller controls the DC power supply to decrease the frequency of the pulsed negative DC voltage applied to the electrode continuously or stepwise.
8. The plasma processing apparatus according to claim 1 , wherein
the controller is configured to control the plasma processing apparatus to etch holes in the workpiece, and
the controller controls the DC power supply to decrease the frequency of the pulsed negative DC voltage applied to the electrode from a first frequency to a second frequency lower than the first frequency at a time point when a predetermined depth of the holes is reached.
9. The plasma processing apparatus of claim 1 , wherein
the plasma processing apparatus is an etching apparatus, and
the etching apparatus further includes a radio-frequency power supply which applies radio-frequency power to form a plasma in the plasma processing container.
10. The plasma processing container according to claim 9 , wherein the controller is configured to control the radio-frequency power supply and the DC power supply to:
commence application of pulsed negative DC voltage to the electrode;
after commencement of the application of the pulsed negative DC voltage, commence application of the radio-frequency power to form a plasma in the plasma processing container; and
after commencement of the application of the radio-frequency power, perform the decrease of the frequency of the pulsed negative DC voltage.
11. The plasma processing apparatus according to claim 1 , further comprising a plurality of radio-frequency power supplies for generating a plurality of radio-frequency powers for bias having different frequencies.
12. The plasma processing apparatus according to claim 11 , wherein a connection between the plurality of radio-frequency power supplies and the workpiece placement table is selectively switched during etching processing.
13. The plasma processing apparatus of claim 10 , wherein the controller is further configured to control the DC power supply to increase an absolute value of DC voltage applied to the electrode after the commencement of the application of the radio-frequency power.
14. A plasma etching apparatus comprising:
a plasma processing container;
a workpiece placement table disposed in the plasma processing container;
an electrode disposed in the workpiece placement table;
a DC power supply electrically connected to the electrode;
a radio-frequency power supply which applies a radio-frequency power to form a plasma in the plasma processing container; and
a controller configured to:
(i) control the DC power supply to apply a pulsed negative DC voltage to the electrode;
(ii) control the radio-frequency power supply to commence application of the radio-frequency power to form the plasma and etch a workpiece on the workpiece placement table; and
(iii) after commencement of the application of the radio-frequency power, controlling the DC power supply to at least one of: linearly decrease a frequency of the pulsed negative DC voltage applied to the electrode or increase an absolute value of voltage applied to the electrode over a plasma processing time.
15. The plasma etching apparatus according to claim 14 , wherein the controller is configured to decrease the frequency of the pulsed negative DC voltage applied to the electrode as etching progresses or as an amount of time after commencement of the application of the radio-frequency power increases.
16. The plasma etching apparatus according to claim 14 , wherein the controller is configured to both decrease the frequency of the pulsed DC voltage and increase the magnitude of the absolute value of the DC voltage applied by the DC power supply after commencement of the application of the radio-frequency power by the radio-frequency power supply.
17. The plasma etching apparatus according to claim 14 , wherein the radio-frequency power supply is electrically connected to the electrode.
18. The plasma etching apparatus according to claim 14 , wherein the controller is configured to control the DC power supply to commence application of DC voltage to the electrode prior to the commencement of the application of the radio-frequency power.
19. The plasma etching apparatus according to claim 18 , further comprising:
a gas supply which supplies process gas to the plasma processing container; and
a process gas controller which controls a flow of process gas from the gas supply such that a flow of the process gas commences prior to commencement of the application of the DC voltage, and the flow of the process gas is discontinued after both the DC power supply and the radio-frequency power supply are turned off.
20. The plasma etching apparatus according to claim 14 , further comprising a plurality of radio-frequency power supplies for generating a plurality of radio-frequency powers for bias having different frequencies,
wherein a connection between the plurality of radio-frequency power supplies and the workpiece placement table is selectively switched during etching processing.