Plasma processing apparatus and plasma processing method
A disclosed plasma processing apparatus includes a chamber, a plasma generator, a plurality of annular electromagnet units, a power source, at least one optical sensor, and a controller. The plurality of annular electromagnet units are provided coaxially with respect to an axis passing through an internal space of the chamber. The at least one optical sensor detects an emission intensity distribution of plasma along a radial direction in the chamber. The controller controls a power source to adjust currents respectively supplied to the plurality annular electromagnet units according to the emission intensity distribution.
1. A plasma processing apparatus comprising:
a chamber having an internal space;
a substrate support disposed in the internal space of the chamber;
a gas supply configured to supply a processing gas into the internal space of the chamber;
a plasma generator configured to generate plasma from the processing gas in the internal space of the chamber;
a plurality of annular electromagnet units disposed above the internal space of the chamber and disposed coaxially with respect to an axis passing through the internal space, each of the plurality of annular electromagnet units having one or more electromagnets;
at least one optical sensor configured to detect an emission intensity distribution of plasma in the internal space along a radial direction with respect to the axis;
at least one power source configured to individually supply a current to the plurality of annular electromagnet units; and
a controller configured to adjust currents respectively supplied from the at least one power source to the plurality of annular electromagnet units based on the emission intensity distribution of the plasma detected by the at least one optical sensor.
2. The plasma processing apparatus according to claim 1 , wherein each of the plurality of annular electromagnet units includes at least one annular electromagnet.
3. The plasma processing apparatus according to claim 1 , wherein each of the plurality of annular electromagnet units includes a plurality of electromagnets arranged along a circumferential direction with respect to the axis.
4. The plasma processing apparatus according to claim 3 , wherein each of the plurality of electromagnets includes a bobbin having a columnar shape and a coil wound around the bobbin.
5. The plasma processing apparatus according to claim 1 , wherein the plasma processing apparatus includes a plurality of optical sensors disposed above the internal space and configured to detect the emission intensity distribution as the at least one optical sensor.
6. The plasma processing apparatus according to claim 5 , wherein the plurality of optical sensors are arranged along the radial direction.
7. The plasma processing apparatus according to claim 1 , wherein the at least one optical sensor is provided along a side wall of the chamber.
8. The plasma processing apparatus according to claim 1 , wherein the controller is configured to adjust the current supplied to the plurality of annular electromagnet units to reduce a difference between the emission intensity distribution detected by the at least one optical sensor and a desired emission intensity distribution.
9. The plasma processing apparatus according to claim 1 , wherein the substrate support includes a temperature control mechanism configured to adjust a temperature distribution of a substrate placed on the substrate support.
10. The plasma processing apparatus according to claim 1 , wherein the gas supply is configured to adjust a distribution of a flow rate of the processing gas along the radial direction.
11. The plasma processing apparatus according to claim 1 , wherein the controller is configured to adjust the currents respectively supplied from the at least one power source to the plurality of annular electromagnet units based on a shape of a substrate measured in the chamber or outside the chamber by a shape measuring device.
12. A plasma processing method using a plasma processing apparatus, the plasma processing apparatus including:
a chamber having an internal space;
a substrate support disposed in the internal space of the chamber,
a gas supply configured to supply processing gas into the internal space of the chamber;
a plasma generator configured to generate plasma from the processing gas in the internal space of the chamber;
a plurality of annular electromagnet units disposed above the internal space of the chamber and disposed coaxially with respect to an axis passing through the internal space, each of the plurality of annular electromagnet units having one or more electromagnets;
at least one optical sensor configured to detect an emission intensity distribution of plasma in the internal space along a radial direction with respect to the axis; and
at least one power source configured to individually supply a current to the plurality of annular electromagnet units, the plasma processing method comprising:
(a) detecting the emission intensity distribution of the plasma by the at least one optical sensor; and
(b) adjusting the currents respectively supplied from the at least one power source to the plurality of annular electromagnet units based on the emission intensity distribution of the plasma.
13. The plasma processing method according to claim 12 , wherein, in said (b), the currents respectively supplied to the plurality of annular electromagnet units are adjusted from a plasma state which is the emission intensity distribution of the plasma or a distribution of a density or an amount of chemical species in the plasma obtained from the emission intensity distribution.
14. The plasma processing method according to claim 12 , further comprising:
measuring a plasma state generated in the chamber using a sensor substrate placed on the substrate support; and
adjusting the currents respectively supplied from the at least one power source to the plurality of annular electromagnet units based on the plasma state measured using the sensor substrate.
15. The plasma processing method according to claim 14 , wherein the sensor substrate is configured to measure a flux distribution of ions or radicals supplied to the sensor substrate as the plasma state.
16. The plasma processing method according to claim 12 ,
wherein a shape of a substrate corresponding to a plasma state based on the emission intensity distribution acquired by using the at least one optical sensor is identified from data prepared in advance which indicates a relationship between a plurality of plasma states and shapes of the substrate respectively obtained in the plurality of plasma states, and
in said (b), the currents respectively supplied from the at least one power source to the plurality of annular electromagnet units are adjusted to reduce a difference between the identified shape of the substrate and a desired shape of the substrate.
17. The plasma processing method according to claim 12 , further comprising:
(c) processing a substrate by plasma generated in the chamber,
wherein a shape of the substrate processed in said (c) is measured, and
in said (b), the currents respectively supplied from the at least one power source to the plurality of annular electromagnet units are adjusted to reduce a difference between a plasma state based on the emission intensity distribution acquired by the at least one optical sensor and a desired plasma state and to reduce a difference between the measured shape of the substrate and a desired shape of the substrate.