Selective molecular layer deposition of organic and hybrid organic-inorganic layers
Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.
1. A method of depositing a film comprising:
providing a substrate comprising a first material having a hydrogen terminated surface and a second material having a hydroxyl terminated surface;
exposing the substrate to a modifying compound comprising a modifying species that reacts with the hydroxyl terminated surface of the second material to form a modified second surface on the second material; and
exposing the substrate to one or more deposition gases which react with the modified second surface of the second material to form a film on the second material,
wherein the modifying species has a general formula (RO) 3 Si-L-Si(OR) 3 where each R is independently selected from C1-C4 alkyl groups and L is an aromatic moiety or a carbon chain comprising 1 to 3 carbon atoms.
2. The method of claim 1 , wherein the first material comprises silicon and the second material comprises silicon oxide.
3. The method of claim 1 , wherein R consists essentially of methyl.
4. The method of claim 1 , wherein L is a phenyl group.
5. The method of claim 4 , wherein the phenyl group has the silicon atoms in a para position.
6. The method of claim 1 , wherein L is —(CH 2 ) 2 —.
7. The method of claim 1 , wherein L contains at least one double bond.
8. The method of claim 7 , wherein L is-CH═CH—.