Power semiconductor device with dV/dt controllability and low gate charge
A power semiconductor device having a barrier region is provided. A power unit cell of the power semiconductor device has at least two trenches that may both extend into the barrier region. The at least two trenches may both have a respective trench electrode coupled to a control terminal of the power semiconductor device. For example, the trench electrodes are structured to reduce the total gate charge of the power semiconductor device. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by the drift region. The barrier region can be electrically floating.
1. A power semiconductor transistor, comprising:
a semiconductor body coupled to a first load terminal and a second load terminal of the power semiconductor transistor and comprising a drift region of a first conductivity type configured to conduct a load current between the first and the second load terminals; and
a power unit cell comprising:
a control trench having a control trench electrode and a dummy trench having a dummy trench electrode coupled to the control trench electrode;
an active mesa comprising a source region of the first conductivity type and electrically connected to the first load terminal and a channel region of a second conductivity type and separating the source region and the drift region, wherein, in the active mesa, at least a respective section of each of the source region, the channel region and the drift region are arranged adjacent to a sidewall of the control trench, and wherein the control trench electrode is configured to receive a control signal from a control terminal of the power semiconductor transistor and to control the load current in the active mesa;
a barrier region of the second conductivity type formed in the semiconductor body and laterally overlapping with the active mesa and a bottom of the dummy trench,
wherein the control trench has a total control trench volume and a volume of the control trench electrode is less than 50% of the total control trench volume, and/or the dummy trench has a total dummy trench volume and a volume of the dummy trench electrode is less than 50% of the total dummy trench volume,
wherein the total control trench volume is an integrated volume of the respective control trench within the active region along two lateral directions and a vertical direction of the semiconductor body and comprises a control trench insulator within the control trench,
wherein the total dummy trench volume is an integrated volume of the respective dummy trench within the active region along two lateral directions and a vertical direction of the semiconductor body and comprises a dummy trench insulator within the dummy trench, and
wherein the power unit cell further comprises an inactive mesa arranged adjacent to the dummy trench, and wherein a transition between the first load terminal and the inactive mesa provides an electrical insulation at least for charge carriers of the first conductivity type.
2. The power semiconductor transistor of claim 1 , wherein the inactive mesa comprises, in an upper portion, a region of electrically insulating material that overlaps with the channel region.
3. The power semiconductor transistor of claim 1 , further comprising a contact plug that is in electrical contact with the inactive mesa and a portion of the channel region that extends into the inactive mesa.
4. The power semiconductor transistor of claim 1 , further comprising a second trench electrode in the control trench below the control trench electrode, wherein the second trench electrode is separated from the control trench electrode by an insulator block.
5. The power semiconductor transistor of claim 4 , wherein the control trench electrode has a first share of the total control trench volume, wherein the second trench electrode has a second share of the total control trench volume, wherein the second share is greater than the first share.
6. The power semiconductor transistor of claim 1 , wherein the dummy trench electrode is separated from the channel region in a vertical direction that is perpendicular to a horizontal surface of a semiconductor substrate.
7. The power semiconductor transistor of claim 6 , further comprising a second electrode in the dummy trench above the dummy trench electrode, wherein the second electrode is electrically floating or connected to a different node than the dummy trench electrode.
8. The power semiconductor transistor of claim 7 , wherein the dummy trench electrode has a first share of the total dummy trench volume, wherein the second electrode has a second share of the total dummy trench volume, wherein the second share is greater than the first share.
9. The power semiconductor transistor of claim 1 , wherein the dummy trench electrode is the only conductive electrode structure disposed in the dummy trench.
10. The power semiconductor transistor of claim 9 , wherein the dummy trench further comprises a dummy trench insulator, wherein the dummy trench electrode has a first share of the total dummy trench volume, wherein the dummy trench insulator has a second share of the total dummy trench volume, and wherein the second share is greater than the first share.
11. The power semiconductor transistor of claim 1 , further comprising a second electrode and an insulator block in the dummy trench, wherein the second electrode is arranged laterally adjacent to the dummy trench electrode and separated therefrom by means of the insulator block.
12. The power semiconductor transistor of claim 1 , further comprising a second trench electrode and an insulator block in the control trench, wherein the second trench electrode trench is arranged laterally adjacent to the control trench electrode and separated therefrom by means of the insulator block.
13. The power semiconductor transistor of claim 1 , wherein the power unit cell further comprises a source trench, and wherein the source trench comprises a source trench electrode and a second trench electrode that is insulated from the source trench electrode, wherein the source trench electrode is connected to a different node as the second trench electrode.
14. The power semiconductor transistor of claim 13 , wherein the source trench electrode has a first share of a total source trench volume of the source trench, and the second trench electrode has a second share of the total source trench volume, and wherein the second share is greater than the first share.
15. The power semiconductor transistor of claim 14 , wherein the power unit cell further comprises an inactive mesa arranged adjacent to the dummy trench, and wherein the source trench and the dummy trench are arranged on opposite sides of the inactive mesa.
16. A power semiconductor transistor, comprising:
a semiconductor body coupled to a first load terminal and a second load terminal of the power semiconductor transistor and comprising a drift region of a first conductivity type configured to conduct a load current between the first and the second load terminals; and
a power unit cell comprising:
a control trench having a control trench electrode and a dummy trench having a dummy trench electrode coupled to the control trench electrode; and
an active mesa comprising a source region of the first conductivity type and electrically connected to the first load terminal and a channel region of a second conductivity type and separating the source region and the drift region, wherein, in the active mesa, at least a respective section of each of the source region, the channel region and the drift region are arranged adjacent to a sidewall of the control trench, and wherein the control trench electrode is configured to receive a control signal from a control terminal of the power semiconductor transistor and to control the load current in the active mesa; and
an inactive mesa arranged adjacent to the dummy trench, and wherein a transition between the first load terminal and the inactive mesa provides an electrical insulation at least for charge carriers of the first conductivity type,
wherein the dummy trench has a total dummy trench volume and a volume of the dummy trench electrode is less than 50% of the total dummy trench volume, and
wherein the dummy trench volume is an integrated volume of the respective dummy trench within the active region along two lateral directions and a vertical direction of the semiconductor body and comprises a dummy trench insulator within the dummy trench,
wherein the inactive mesa comprises, in an upper portion, an oxidized region vertically overlapping with the channel region.
17. A power semiconductor transistor, comprising:
a semiconductor body coupled to a first load terminal and a second load terminal of the power semiconductor transistor and comprising a drift region of a first conductivity type configured to conduct a load current between the first and the second load terminals; and
a power unit cell comprising:
a control trench having a control trench electrode and a dummy trench having a dummy trench electrode coupled to the control trench electrode;
an active mesa comprising a source region of the first conductivity type and electrically connected to the first load terminal and a channel region of a second conductivity type and separating the source region and the drift region, wherein, in the active mesa, at least a respective section of each of the source region, the channel region and the drift region are arranged adjacent to a sidewall of the control trench, and wherein the control trench electrode is configured to receive a control signal from a control terminal of the power semiconductor transistor and to control the load current in the active mesa;
a barrier region of the second conductivity type formed in the semiconductor body and laterally overlapping with the active mesa and a bottom of the dummy trench,
wherein the source region is laterally structured along a second lateral direction with intermission regions separating adjacent source subregions, and wherein the control trench electrode is laterally structured along the second lateral direction according to a lateral structure of the source region to laterally overlap with the source subregions,
wherein the dummy trench has a total dummy trench volume and a volume of the dummy trench electrode is less than 50% of the total dummy trench volume, and
wherein the dummy trench volume is an integrated volume of the respective dummy trench within the active region along two lateral directions and a vertical direction of the semiconductor body and comprises a dummy trench insulator within the dummy trench.