Memory device
According to one embodiment, a memory device includes a memory cell including a magnetoresistive effect element. The magnetoresistive effect element includes a non-magnetic layer between first and second electrodes in the first direction, a first magnetic layer between the first electrode and the non-magnetic layer, a second magnetic layer between the second electrode and the non-magnetic layer, and a first layer between the second electrode and the second magnetic layer. The first layer includes oxygen and at least one selected from magnesium, transition metal, and lanthanoid, the first layer has a first size in the first direction, the non-magnetic layer has a second size in the first direction. The first size is 1.1 times or more and 2 times or less the second size.
1. A memory device comprising:
a first interconnect above a substrate in a first direction, the first direction being perpendicular to a first face of the substrate;
a second interconnect between the substrate and the first interconnect; and
a memory cell between the first interconnect and the second interconnect, the memory cell including a switching element and a magnetoresistive effect element which are arranged along the first direction,
wherein the magnetoresistive effect element includes
a first electrode,
a second electrode above the first electrode in the first direction,
a non-magnetic layer between the first electrode and the second electrode,
a first magnetic layer between the first electrode and the non-magnetic layer,
a second magnetic layer between the second electrode and the non-magnetic layer, and
a first layer between the second electrode and the second magnetic layer, the first layer including oxygen and at least one selected from magnesium, transition metal, and lanthanoid, and
a first size in the first direction of the first layer falls within a range of 1.1 times or more to 2 times or less than a second size in the first direction of the non-magnetic layer.
2. The memory device according to claim 1 , wherein the transition metal includes at least one selected from tantalum, cobalt, nickel, iron, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gallium, molybdenum, zirconium, ruthenium, niobium, tungsten, and hafnium.
3. The memory device according to claim 1 , wherein the lanthanoid includes at least one selected from lanthanum and lutetium.
4. The memory device according to claim 1 , wherein
the first magnetic layer is a reference layer,
the second magnetic layer is a storage layer, and
the non-magnetic layer is a tunnel barrier layer.
5. The memory device according to claim 1 , wherein an electric resistance of the first layer is higher than an electric resistance of the non-magnetic layer.
6. The memory device according to claim 1 , wherein
the first magnetic layer has a fixed magnetization direction, and
the second magnetic layer has a variable magnetization direction.
7. The memory device according to claim 1 , wherein the non-magnetic layer includes oxygen and magnesium.
8. A memory device comprising:
a first interconnect above a substrate in a first direction, the first direction being perpendicular to a first face of the substrate;
a second interconnect between the substrate and the first interconnect; and
a memory cell between the first interconnect and the second interconnect, the memory cell including a switching element and a magnetoresistive effect element which are arranged along the first direction,
wherein the magnetoresistive effect element includes
a first electrode,
a second electrode above the first electrode in the first direction,
a non-magnetic layer between the first electrode and the second electrode,
a first magnetic layer between the first electrode and the non-magnetic layer,
a second magnetic layer between the second electrode and the non-magnetic layer, and
a first layer between the first electrode and the first magnetic layer, the first layer including oxygen and at least one selected from magnesium, transition metal, and lanthanoid, and
a first size in the first direction of the first layer falls within a range of 1.1 times or more to 2 times or less than a second size in the first direction of the non-magnetic layer.
9. The memory device according to claim 8 , wherein the transition metal includes at least one selected from tantalum, cobalt, nickel, iron, scandium, titanium, vanadium, chromium, manganese, copper, zinc, gallium, molybdenum, zirconium, ruthenium, niobium, tungsten, and hafnium.
10. The memory device according to claim 8 , wherein the lanthanoid includes at least one selected from lanthanum and lutetium.
11. The memory device according to claim 8 , wherein
the first magnetic layer is a reference layer,
the second magnetic layer is a storage layer, and
the non-magnetic layer is a tunnel barrier layer.
12. The memory device according to claim 8 , wherein an electric resistance of the first layer is higher than an electric resistance of the non-magnetic layer.
13. The memory device according to claim 8 , wherein
the first magnetic layer has a fixed magnetization direction, and
the second magnetic layer has a variable magnetization direction.
14. The memory device according to claim 8 , wherein the non-magnetic layer includes oxygen and magnesium.
15. A memory device comprising:
a first interconnect above a substrate in a first direction, the first direction being perpendicular to a first face of the substrate;
a second interconnect between the substrate and the first interconnect; and
a memory cell between the first interconnect and the second interconnect, the memory cell including a switching element and a magnetoresistive effect element which are arranged along the first direction,
wherein the magnetoresistive effect element includes
a first electrode,
a second electrode above the first electrode in the first direction,
a first non-magnetic layer between the first electrode and the second electrode,
a first magnetic layer between the first electrode and the first non-magnetic layer,
a second magnetic layer between the second electrode and the first non-magnetic layer,
a third magnetic layer between the first electrode and the first magnetic layer, and
a second non-magnetic layer between the first magnetic layer and the third magnetic layer, and
an electric resistance of the third magnetic layer is higher than an electric resistance of the first non-magnetic layer.
16. The memory device according to claim 15 , wherein
the first magnetic layer is a reference layer,
the second magnetic layer is a storage layer,
the third magnetic layer is a shift cancellation layer, and
the first non-magnetic layer is a tunnel barrier layer.
17. The memory device according to claim 15 , wherein
the first magnetic layer has a fixed magnetization direction, and
the second magnetic layer has a variable magnetization direction.
18. The memory device according to claim 17 , wherein
the third magnetic layer has a fixed magnetization direction.