High-density interconnects for integrated circuit packages
An integrated circuit package may be formed including at least one die side integrated circuit device having an active surface electrically attached to an electronic interposer, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in substantially the same plane as an outer surface of the mold material layer. At least one stacked integrated circuit device may be electrically attached to the back surface of the at least one die side integrated circuit through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
1. An integrated circuit package, comprising:
an electronic interposer having a thickness between a first side of the interposer and a second, opposite, side of the interposer, wherein the electronic interposer consists of:
an upper section of the interposer thickness having at least one upper section layer, wherein the at least one upper section layer comprises a dielectric material layer and at least one conductive route;
a lower section of the interposer thickness having at least one lower section layer, wherein the at least one lower section layer comprises a dielectric material layer and at least one conductive route; and
a middle section of the interposer thickness between the upper section and the lower section, wherein the middle section comprises at least one middle section layer, wherein the at least one middle section layer comprises a dielectric material layer and at least one conductive route, and wherein a thickness of the at least one middle section layer is thinner than a thickness of the at least one upper section layer and thinner than a thickness of the at least one lower section layer;
at least one die side integrated circuit device having an active surface electrically attached to the first side of the electronic interposer through first solder interconnects, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in the same plane as an outer surface of the mold material layer; and
at least one stacked integrated circuit device electrically attached to the back surface of the at least one die side integrated circuit device through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
2. The integrated circuit package of claim 1 , wherein the interconnection structure abuts the back surface of the at least one die side integrated circuit device and abuts the outer surface of the mold material layer.
3. The integrated circuit package of claim 1 , wherein the interconnection structure and the at least one stacked integrated circuit device are within a package module, wherein the package module comprises a support structure having a first surface and a second surface, wherein the interconnection structure is formed on the first surface of the support structure, wherein a plurality of module-to-device interconnects are formed on the second surface of the support structure and are electrically connected to the interconnection structure, and wherein the at least one stacked integrated circuit device is electrically attached to the interconnection structure.
4. The integrated circuit package of claim 3 , further comprising a package mold material at least partially encasing the at least one stacked integrated circuit device.
5. The integrated circuit package of claim 1 , further comprising at least one device-to-device conductive route within the middle section.
6. The integrated circuit package of claim 1 , wherein the at least one conductive route of the middle section comprises a plurality of conductive traces, and wherein at least one conductive trace of the plurality of conductive traces of the middle section has a larger thickness in comparison with a thickness of another conductive trace of the plurality of conductive traces of the middle section.
7. The integrated circuit package of claim 1 , wherein at least one dielectric material layer of at least one of the upper section, the lower section, and the middle section comprises an organic material.
8. An electronic system comprising:
a board; and
an integrated circuit package electrically attached to the board, wherein the integrated circuit package comprises:
an electronic interposer having a thickness between a first side of the interposer and a second, opposite, side of the interposer, wherein the electronic interposer consists of:
an upper section of the interposer thickness having at least one upper section layer, wherein the at least one upper section layer comprises a dielectric material layer and at least one conductive route;
a lower section of the interposer thickness having at least one lower section layer, wherein the at least one lower section layer comprises a dielectric material layer and at least one conductive route; and
a middle section of the interposer thickness between the upper section and the lower section, wherein the middle section comprises at least one middle section layer, wherein the at least one middle section layer comprises a dielectric material layer and at least one conductive route, and wherein a thickness of the at least one middle section layer is thinner than a thickness of the at least one upper section layer and thinner than a thickness of the at least one lower section layer;
at least one die side integrated circuit device having an active surface electrically attached to the first side of the electronic interposer through first solder interconnects, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in the same plane as an outer surface of the mold material layer; and
at least one stacked integrated circuit device electrically attached to the back surface of the at least one die side integrated circuit device through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
9. The electronic system of claim 8 , wherein the interconnection structure abuts the back surface of the at least one die side integrated circuit device and abuts the outer surface of the mold material layer.
10. The electronic system of claim 8 , wherein the interconnection structure and the at least one stacked integrated circuit device are within a package module, wherein the package module comprises a support structure having a first surface and a second surface, wherein the interconnection structure is formed on the first surface of the support structure, wherein a plurality of module-to-device interconnects are formed on the second surface of the support structure and are electrically connected to the interconnection structure, and wherein the at least one stacked integrated circuit device is electrically attached to the interconnection structure.
11. The electronic system of claim 10 , further comprising a package mold material at least partially encasing the at least one stacked integrated circuit device.
12. The electronic system of claim 8 , further comprising at least one device-to-device conductive route within the middle section.
13. The electronic system of claim 8 , wherein the at least one conductive route of the middle section comprises a plurality of conductive traces, and wherein at least one conductive trace of the plurality of conductive traces of the middle section has a larger thickness in comparison with a thickness of another conductive trace of the plurality of conductive traces of the middle section.
14. The electronic system of claim 8 , wherein at least one dielectric material layer of at least one of the upper section, the lower section, and the middle section comprises an organic material.
15. A method of fabricating an integrated circuit package, comprising:
forming an electronic interposer having a thickness between a first side of the interposer and a second, opposite, side of the interposer, wherein forming the electronic interposer consists of:
forming an upper section of the thickness having at least one upper section layer, wherein the at least one upper section layer comprises a dielectric material layer and at least one conductive route;
forming a lower section of the thickness having at least one lower section layer, wherein the at least one lower section layer comprises a dielectric material layer and at least one conductive route; and
forming a middle section of the thickness between the upper section and the lower section, wherein the middle section comprises at least one middle section layer, wherein the at least one middle section layer comprises a dielectric material layer and at least one conductive route, and wherein a thickness of the at least one middle section layer is thinner than a thickness of the at least one upper section layer and thinner than a thickness of the at least one lower section layer; and
forming at least one die side integrated circuit device;
electrically attaching an active surface of the at least one die side integrated circuit device to the first side of the electronic interposer through first solder interconnects;
at least partially encasing the at least one die side integrated circuit device in a mold material layer, wherein a back surface of the at least one die side integrated circuit device is in the same plane as an outer surface of the mold material layer; and
electrically attaching at least one stacked integrated circuit device to the back surface of the at least one die side integrated circuit device through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.
16. The method of claim 15 , wherein forming the interconnection structure comprises forming the interconnection structure to abut the back surface of the at least one die side integrated circuit device and to abut the outer surface of the mold material layer.
17. The method of claim 15 , wherein the interconnection structure and the at least one stacked integrated circuit device are formed within a package module, wherein the package module comprises:
forming a support structure having a first surface and a second surface;
forming the interconnection structure on the first surface of the support structure;
forming a plurality of module-to-device interconnects on the second surface of the support structure, wherein the plurality of module-to-device interconnects are electrically connected to the interconnection structure; and
electrically attaching the at least one stacked integrated circuit device to the interconnection structure.
18. The method of claim 17 , further comprising at least partially encasing the at least one stacked integrated circuit device in a package mold material.
19. The method of claim 15 , further comprising electrically attaching the second side of the interposer to an external component through second solder features.
20. The method of claim 15 , wherein the at least one conductive route of the middle section comprises a plurality of conductive traces, and wherein at least one conductive trace of the plurality of conductive traces of the middle section has a larger thickness in comparison with a thickness of another conductive trace of the plurality of conductive traces of the middle section.