Deposition of transition metal—comprising material
The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.
1. A method of forming a transition metal comprising material on a substrate by a cyclic deposition process, the method comprising:
providing a substrate in a reaction chamber;
providing a transition metal precursor comprising a transition metal compound in the reaction chamber; and
providing a second precursor in the reaction chamber,
wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and
wherein the second precursor comprises radicals comprising tellurium, arsenic or bismuth.
2. The method of claim 1 , wherein the adduct ligand is a bidentate nitrogen-comprising adduct ligand.
3. The method of claim 2 , wherein the bidentate nitrogen-comprising adduct ligand comprises two nitrogen atoms, each of nitrogen atoms bonded to at least one carbon atom.
4. The method of claim 1 , wherein the transition metal is heteroleptic transition metal precursor.
5. The method of claim 4 , wherein the heteroleptic transition metal precursor is selected from a group consisting of Co(btsa) 2 (THF)-comprising transition metal precursor, Ni(btsa) 2 (THF)-comprising transition metal precursor.
6. The method of claim 1 , wherein the transition metal is selected from a group consisting of Co and Ni.
7. The method of claim 1 , wherein the transition metal halide comprises a transition metal chloride.
8. The method of claim 1 , wherein the transition metal compound comprises one of CoCl 2 (TMEDA) and NiCl 2 (TMPDA).
9. The method of claim 1 , wherein the second precursor comprises tellurium radicals.
10. The method of claim 9 , wherein the transition metal precursor comprises a heteroleptic transition metal precursor comprising a tetrahydrofurane (THF) ring attached to a transition metal atom and two bis(trimethylsilyl)amide ligands attached to the transition metal atom through nitrogen atoms.
11. The method of claim 9 , wherein the second precursor is formed from a compound selected from the group consisting of H 2 Te, (CH 3 ) 2 Te and Te(SiEt 3 ) 2 .
12. The method of claim 1 , wherein the second precursor is formed from arsenic.
13. The method of claim 1 , wherein the second precursor comprises an alkyl group.
14. The method of claim 1 , wherein the cyclical deposition process comprises providing the transition metal precursor and the second precursor alternately and sequentially in the reaction chamber, and wherein a temperature is less than 250° C.
15. The method of claim 1 , wherein the substrate comprises a first surface comprising a first material and a second surface comprising a second material, wherein the transition metal-comprising material is selectively deposited on the first surface relative to the second surface.
16. The method of claim 15 , wherein the first material comprises a first dielectric material or a first metal, and the second material comprises a second dielectric material or a second metal.
17. The method of claim 15 , wherein the first material comprises native silicon oxide, thermal silicon oxide, soda lime glass, a metal, a metal sulfide, or a metal nitride.
18. The method of claim 15 , wherein the second material comprises Si—H, a metal oxide, or a metal sulfide.
19. A method of forming a transition metal-comprising material on a substrate by a cyclic deposition process, the method comprising:
providing a substrate in a reaction chamber;
providing a transition metal precursor comprising a transition metal halide bound to an adduct ligand in the reaction chamber;
providing a second precursor in the reaction chamber; and
contacting the transition metal-comprising material with a reducing agent thereby forming an elemental transition metal,
wherein the second precursor comprises radicals comprising tellurium, arsenic or bismuth.
20. The method of claim 19 , wherein the reducing agent precursor comprises at least one of forming gas (H 2 +N 2 ), ammonia (NH 3 ), an ammonia (NH 3 ) plasma, hydrazine (N 2 H 4 ), molecular hydrogen (H 2 ), hydrogen atoms (H), a hydrogen plasma, hydrogen radicals, hydrogen excited species, alcohols, aldehydes, carboxylic acids, boranes, or amines, tertiary butyl hydrazine (C 4 H 12 N 2 ), silane (SiH 4 ), disilane (Si 2 H 6 ), trisilane (Si 3 H 8 ), germane (GeH 4 ), digermane (Ge 2 H 6 ), borane (BH 3 ), and diborane (B 2 H 6 ).