EUV photoresist with low-activation-energy ligands or high-developer-solubility ligands
View Patent ↗A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: The second ligands each have a following structure: {circle around (M)} represents the core group. L′ represents a chemical that includes 0-2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1-6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1-6 carbon atoms saturated by H. L″′ represents a chemical that includes 1-6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L″′ together.
1. A photoresist, comprising:
a metal-containing component; and
one or more ligands coupled to the metal-containing component;
wherein each ligand in a subset of the one or more ligands includes:
a first chemical coupled to the metal-containing component, wherein the first chemical includes carbon and hydrogen;
a second chemical that includes carbon, wherein the second chemical further includes hydrogen or fluorine; and
a linker that is linked to both the first chemical and the second chemical, wherein the linker includes:
a first compound that contains —C(═O)SH; or
a second compound that contains —SO 2 OH, or —SO 2 SH.
2. The photoresist of claim 1 , wherein the metal-containing component contains Caesium (Cs), Barium (Ba), Lanthanum (La), Cerium (Ce), Indium (In), Silver (Ag), or Antimony (Sb).
3. The photoresist of claim 1 , wherein the photoresist is an extreme ultraviolet (EUV) lithography photoresist.
4. The photoresist of claim 1 , wherein:
the subset of the one or more ligands is a first subset of the ligands;
the one or more ligands further includes a second subset;
each ligand in the second subset of the ligands includes the first chemical and the second chemical; and
the first chemical and the second chemical are coupled together without the linker.
5. The photoresist of claim 4 , wherein the metal-containing component is simultaneously attached to a first ligand from the first subset and a second ligand from the second subset.
6. The photoresist of claim 5 , wherein:
the metal-containing component includes a first metal ion and a second metal ion;
the first ligand is attached directly to the first metal ion; and
the second ligand is attached directly to the second metal ion.
7. The photoresist of claim 4 , wherein the ligands in the first subset have one of the following chemical formulas:
wherein {circle around (M)} represents the metal-containing component.
8. The photoresist of claim 4 , wherein the ligands in the second subset have one of the following chemical formulas:
wherein {circle around (M)} represents the metal-containing component.
9. A photoresist, comprising
a metal-containing component;
one or more ligands attached to the metal-containing component;
wherein each ligand in a subset of the one or more ligands has one of the following chemical formulas:
wherein represents the metal-containing component; and
a linker that includes:
a first compound that contains —C(═O)SH: or
a second compound that contains —SO 2 OH, or —SO 2 SH.
10. The photoresist of claim 9 , wherein: the metal-containing component contains Caesium (Cs), Barium (Ba), Lanthanum (La), Cerium (Ce), Indium (In), Tin (Sn), Silver (Ag), or Antimony (Sb).
11. The photoresist of claim 9 , wherein:
the metal-containing component contains a plurality of metal ions;
the one or more ligands belong to a first subset of ligands that are attached to a first one of the metal ions;
the photoresist further includes a second subset of ligands that are attached to a second one of the metal ions; and
the second subset of ligands each have one of the following chemical formulas:
12. The photoresist of claim 9 , wherein the photoresist is an extreme ultraviolet (EUV) lithography photoresist.
13. A method, comprising:
forming a photoresist material over a substrate, wherein the photoresist material contains a metal-containing component and one or more ligands coupled to the metal-containing component; and
performing an extreme ultraviolet (EUV) lithography process using the photoresist material;
wherein each ligand in a subset of the one or more ligands includes:
a first chemical coupled to the metal-containing component, wherein the first chemical includes carbon and hydrogen;
a second chemical that includes carbon, wherein the second chemical further includes hydrogen or fluorine; and
a linker that is linked to both the first chemical and the second chemical, wherein the linker includes:
a first compound that contains —C(═O)SH; or
a second compound that contains —SO 2 OH, or —SO 2 SH.
14. The method of claim 13 , wherein the metal-containing component contains Caesium (Cs), Barium (Ba), Lanthanum (La), Cerium (Ce), Indium (In), Silver (Ag), or Antimony (Sb).
15. The method of claim 13 , wherein:
the subset of the one or more ligands is a first subset of the ligands;
the one or more ligands further includes a second subset;
each ligand in the second subset of the ligands includes the first chemical and the second chemical; and
the first chemical and the second chemical are coupled together without the linker.
16. The method of claim 15 , wherein:
the metal-containing component is simultaneously attached to a first ligand from the first subset and a second ligand from the second subset;
the metal-containing component includes a first metal ion and a second metal ion;
the first ligand is attached directly to the first metal ion; and
the second ligand is attached directly to the second metal ion.
17. The method of claim 15 , wherein the ligands in the first subset have one of the following chemical formulas:
wherein {circle around (M)} represents the metal-containing component.
18. The method of claim 15 , wherein the ligands in the second subset have one of the following chemical formulas:
wherein {circle around (M)} represents the metal-containing component.
19. The method of claim 13 , wherein the EUV process includes an exposure process, and wherein the one or more ligands are cleaved from the metal-containing component after the exposure process.
20. The method of claim 13 , further comprising cleaving the one or more ligands from the metal-containing component at least in part via a heat treatment process.