Semiconductor structure and manufacturing method thereof
A semiconductor structure includes a substrate and a dielectric material disposed over the substrate. A void is disposed within the dielectric material. A dielectric liner is disposed along inner sidewalls of the dielectric material proximate to the void. An inner surface of the dielectric liner defines an outer extent of the void, and the dielectric liner includes an inner liner layer and an outer liner layer.
1. A semiconductor structure, comprising:
a substrate;
a dielectric material disposed over the substrate;
a void extending within the dielectric material;
a dielectric liner disposed along inner sidewalls of the dielectric material proximate to the void, wherein an inner surface of the dielectric liner defines an outer extent of the void, and wherein the dielectric liner includes an inner liner layer and an outer liner layer; and
a gate structure disposed over the substrate beneath the void.
2. The semiconductor structure of claim 1 ,
wherein the gate structure is disposed directly beneath the void.
3. The semiconductor structure of claim 1 , wherein the inner liner layer is a first conformal layer that defines outer lateral extends of the void and that defines a lower extent of the void.
4. The semiconductor structure of claim 3 , wherein the outer liner layer is a second conformal layer that separates the inner liner layer from the dielectric material.
5. The semiconductor structure of claim 1 , further comprising:
a plurality of conductive structures extending within the dielectric material, at least one of the conductive structures comprising a plug portion and a top metal portion on the plug portion, wherein a width of the top metal portion is greater than a width of the plug portion.
6. The semiconductor structure of claim 5 , wherein the void includes a first void portion corresponding to a height of the plug portion and a second void portion corresponding to a height of the top metal portion.
7. The semiconductor structure of claim 1 , wherein the void comprises:
a first void portion having a first width,
a second void portion over the first void portion and having a second width, and
a third void portion over the second void portion and having a third width,
wherein the second width is less than the first width and is less than the third width, and wherein the void tapers continuously inward from the third width until terminating at an uppermost extent of the void.
8. A semiconductor structure, comprising:
a substrate;
a first dielectric layer disposed over the substrate;
a second dielectric layer disposed over the first dielectric layer;
a third dielectric layer disposed over the second dielectric layer, wherein a portion of the third dielectric layer extends to a depth within the first dielectric layer to laterally surround a void, the void extending from the first dielectric layer to the third dielectric layer; and
a dielectric liner disposed along inner sidewalls of the first dielectric layer and along inner sidewalls of the second dielectric layer, the dielectric liner surrounding a first portion of the void within the first dielectric layer and surrounding a second portion of the void within the second dielectric layer.
9. The semiconductor structure of claim 8 , wherein the dielectric liner is a first conformal layer that defines a lower extent of the first portion of the void and that defines outer lateral extents of the first portion of the void and the second portion of the void.
10. The semiconductor structure of claim 9 , wherein the third dielectric layer separates the first conformal layer from the first dielectric layer and from the second dielectric layer.
11. The semiconductor structure of claim 8 , wherein the third dielectric layer defines a lower extent of the first portion of the void, defines an outer lateral extent of the first portion of the void, and defines an outer lateral extent of the second portion of the void; and wherein the dielectric liner separates the third dielectric layer from the first dielectric layer and from the second dielectric layer.
12. The semiconductor structure of claim 8 , further comprising:
a gate structure disposed over the substrate and beneath the third dielectric layer, wherein the void is disposed directly over the gate structure.
13. The semiconductor structure of claim 8 , wherein an upper extent of the void extends over the second dielectric layer and tapers continuously inward until reaching an apex of the void.
14. The semiconductor structure of claim 8 , wherein a ratio of a width to a height of the void is substantially greater than 1:2.
15. The semiconductor structure of claim 8 , wherein the void includes a waist portion between the first portion of the void and the second portion of the void such that a width of the first portion of the void or the second portion of the void is about 250 nm to about 450 nm, and a width of the waist portion of the void is about 80 nm to about 220 nm.
16. A semiconductor structure, comprising:
a substrate;
a gate structure disposed over the substrate;
a first dielectric layer disposed over the substrate and directly contacting the gate structure;
a second dielectric layer disposed over the first dielectric layer;
a plurality of conductive structures provided within the first dielectric layer and the second dielectric layer;
a third dielectric layer disposed over the second dielectric layer and the plurality of conductive structures; and
a void disposed over the gate structure and including a lowermost void portion in the first dielectric layer, an intermediate void portion in the second dielectric layer, and an uppermost void portion disposed in the third dielectric layer, the uppermost void portion tapering continuously inwardly from the intermediate void portion until terminating at an apex in the third dielectric layer.
17. The semiconductor structure of claim 16 , further comprising:
a conformal dielectric liner extending along the first dielectric layer and the second dielectric layer to laterally surround the lowermost void portion and the intermediate void portion.
18. The semiconductor structure of claim 16 , wherein the third dielectric layer includes a portion that extends down along inner sidewalls of the first dielectric layer and along inner sidewalls of the second dielectric layer to define outer extents of the void.
19. The semiconductor structure of claim 18 , further comprising:
a conformal dielectric liner extending along inner sidewalls of the portion of the third dielectric layer to laterally surround the lowermost void portion and the intermediate void portion and to separate the portion of the third dielectric layer from the first dielectric layer and the second dielectric layer.
20. The semiconductor structure of claim 16 , wherein the void is directly over the gate structure.