Semiconductor device and method of forming the same
An apparatus includes an active region; a scribe region surrounding the active region; a test component in the scribe region; a pad electrode in the active region; and a power supply wiring of an upper wiring layer in the active region, the power supply wiring extending between the test component and the pad electrode; and an interconnection structure coupling the test component and the pad electrode across a border between the active region and the scribe region, the interconnection structure including a wiring portion of a lower wiring layer crossing the power supply wiring.
1. An apparatus comprising:
an active region;
a scribe region surrounding the active region;
a test component in the scribe region;
a pad electrode in the active region;
a power supply wiring of an upper wiring layer in the active region, the power supply wiring extending between the test component and the pad electrode; and
an interconnection structure configured to couple the test component and the pad electrode across a border between the active region and the scribe region, the interconnection structure including a wiring portion of a lower wiring layer crossing the power supply wiring,
wherein the interconnection structure further includes a fuse element between the wiring portion and the test component, the fuse element being capable of breaking an electrical connection between the pad electrode and the test component when the fuse is blown, and
wherein the fuse element is formed in a hole in the scribe region.
2. The apparatus of claim 1 , wherein the upper wiring layer is directly above the lower wiring layer.
3. The apparatus of claim 1 , wherein the power supply wiring extends along the border between the active region and the scribe region.
4. The apparatus of claim 3 , wherein the power supply wiring is a closest wiring to the border between the active region and the scribe region.
5. The apparatus of claim 1 , wherein the conductive material forming the fuse element is provided on a bottom surface and a side surface of the hole in a first direction, and is not provided on the side surface of the hole in a second direction different from the first direction.
6. The apparatus of claim 5 , wherein a film thickness of the conductive material forming the fuse element is smaller in the hole than outside of the hole.
7. An apparatus comprising:
an active region;
a scribe region surrounding the active region;
a test component in the scribe region;
a pad electrode in the active region;
a power supply wiring of an upper wiring layer in the active region, the power supply wiring extending between the test component and the pad electrode; and
an interconnection structure configured to couple the test component and the pad electrode across a border between the active region and the scribe region, the interconnection structure including a wiring portion of a lower wiring layer crossing the power supply wiring, wherein the wiring portion of the lower wiring layer is provided inside an insulating film, and wherein the power supply wiring of the upper wiring layer is disposed on top of the insulating film, wherein the interconnection structure further includes a fuse element between the wiring portion and the test component, the fuse element being capable of breaking an electrical connection between the pad electrode and the test component when the fuse is blown, wherein the fuse element includes wiring having a width smaller than a width of a region coupled to the fuse element, wherein the region includes wiring.
8. An apparatus comprising:
an active region;
a scribe region surrounding the active region;
a test component in the scribe region;
a pad electrode in the active region;
a power supply wiring of an upper wiring layer in the active region, the power supply wiring extending between the test component and the pad electrode; and
an interconnection structure configured to couple the test component and the pad electrode across a border between the active region and the scribe region, the interconnection structure including a wiring portion of a lower wiring layer crossing the power supply wiring,
wherein the interconnection structure further includes a fuse element between the wiring portion and the test component, the fuse element being capable of breaking an electrical connection between the pad electrode and the test component when the fuse is blown, and wherein the pad electrode is a first pad electrode, the apparatus further comprising a second pad electrode in the scribe region and the fuse element is arranged between the first pad electrode and the second pad electrode.
9. The apparatus of claim 8 , further comprising a third pad electrode coupled between the first pad electrode and the fuse element.
10. An apparatus comprising:
an active region;
a scribe region surrounding the active region;
a test component in the scribe region;
a pad electrode in the active region;
a power supply wiring of an upper wiring layer in the active region, the power supply wiring extending between the test component and the pad electrode;
an interconnection structure configured to couple the test component and the pad electrode across a border between the active region and the scribe region, the interconnection structure including a wiring portion of a lower wiring layer crossing the power supply wiring; and
a cover film covering at least the power supply wiring of an upper wiring layer, the pad electrode in the active region, and the fuse element in the scribe region, the cover film having an opening to expose an upper surface of the pad electrode,
wherein the interconnection structure further includes a fuse element between the wiring portion and the test component, the fuse element being capable of breaking an electrical connection between the pad electrode and the test component when the fuse is blown.
11. An apparatus comprising:
an active region;
a scribe region surrounding the active region;
a test component in the scribe region;
a first wiring connected to the test component in the scribe region;
a pad electrode in the active region;
a power supply wiring of an upper wiring layer in the active region, the power supply wiring extending between the test component and the pad electrode;
an interconnection structure coupling the test component and the pad electrode across a border between the active region and the scribe region, the interconnection structure including a wiring portion of a lower wiring layer crossing the power supply wiring;
a second wiring extending between the wiring portion and the test component; and
a contact connecting the first wiring and the second wiring in the scribe region, the contact including conductive material configured as a fuse element, the fuse element being capable of breaking an electrical connection between the pad electrode and the test component.
12. The apparatus of claim 11 , wherein the upper wiring layer is directly above the lower wiring layer.
13. The apparatus of claim 11 , wherein the power supply wiring extends along the border between the active region and the scribe region.
14. The apparatus of claim 11 , wherein the power supply wiring is a closest wiring to the border between the active region and the scribe region.
15. The apparatus of claim 11 , wherein the contact is provided in a hole and a film thickness of the conductive material forming the contact is smaller in the hole than outside of the hole.
16. The apparatus of claim 15 , wherein the conductive material forming the contact is provided on a bottom surface and a side surface of the hole in a first direction, and is not provided on the side surface of the hole in a second direction different from the first direction.
17. The apparatus of claim 11 , further comprising a third pad electrode electrically connected to the first wiring in the scribe region.
18. The apparatus of claim 11 , further comprising a cover film covering at least the power supply wiring of an upper wiring layer and the pad electrode in the active region and the fuse element in the scribe region, the cover film having an opening to expose an upper surface of the pad electrode.