Granted Patent B2

US 12,224,316 · App. 17/881,926 · Granted Feb 11, 2025

Inventors: Christian Philipp Sandow (Haar, DE); Wolfgang Roesner (Ottobrunn, DE)

Assignee: Infineon Technologies Austria AG

H01L29/0834H01L29/0847H01L29/66348H01L29/7397H01L21/266H01L29/404H01L29/407

Abstract

Claims (23)

1. A semiconductor device, comprising:

a semiconductor body comprising a first surface and a second surface opposite the first surface;

an IGBT (insulated gate bipolar transistor) in an IGBT portion of the semiconductor body; and

a diode in a diode portion of the semiconductor body,

wherein the diode comprises:

an anode region of a first conductivity type and confined by diode trenches along a first lateral direction, each of the diode trenches including a diode trench electrode and a diode trench dielectric;

a cathode contact region of a second conductivity type adjoining the second surface of the semiconductor body opposite to the first surface; and

at least two first contact grooves extending into the anode region along a vertical direction from the first surface of the semiconductor body, the at least two first contact grooves being separated from one another along the first lateral direction.

2. The semiconductor device of claim 1 , wherein the at least two first contact grooves have different widths in the first lateral direction.

3. The semiconductor device of claim 1 , wherein the diode further comprises an anode contact region of the first conductivity type adjoining a bottom side of at least one of the at least two first contact grooves.

4. The semiconductor device of claim 1 , wherein the IGBT comprises a collector region of the first conductivity type adjoining the second surface, and wherein the semiconductor device further comprises a collector electrode directly electrically connected to the cathode contact region in the diode portion and to the collector region in the IGBT portion via the second surface.

5. The semiconductor device of claim 3 , wherein the anode contact region has a first doping concentration at a first position below a center of a bottom side of the first contact groove, wherein the doping concentration of the anode contact region decreases by at least a factor of ten over a lateral distance starting from the first position to a second position along the first lateral direction, and wherein the lateral distance is smaller than half of a width of the first contact groove along the first lateral direction at the first surface.

6. The semiconductor device of claim 5 , wherein the doping concentration of the anode contact region decreases by at least a factor of 100 over the lateral distance.

7. The semiconductor device of claim 1 , wherein the IGBT comprises:

a gate trench including a gate electrode and a gate dielectric;

a source region of the second conductivity type adjoining the gate trench;

a body region of the first conductivity type adjoining the gate trench;

an emitter electrode electrically connected to the body region and to the source region via the first surface of the semiconductor body; and

a drift region of the second conductivity type between the body region and the second surface of the semiconductor body.

8. The semiconductor device of claim 7 , further comprising a second contact groove extending into the body region along the vertical direction from the first surface.

9. The semiconductor device of claim 1 , wherein the IGBT includes an array of IGBT transistor cells, and wherein the diode is arranged outside the array of IGBT transistor cells.

10. The semiconductor device of claim 1 , wherein a lateral extent of the diode is larger than a thickness of the semiconductor body.

11. The semiconductor device of claim 1 , wherein the diode trench electrode is electrically connected to an emitter electrode of the IGBT.

Assignments (1)

Priority Claims (1)

Continuity (2)

References Cited (30)