Method of depositing silicon nitride films
A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N 2 plasma conversion, and providing an H 2 plasma conversion.
1. A method for depositing a silicon nitride layer on a stack, comprising providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises:
dosing the stack with a silicon halide containing precursor by providing a silicon halide containing precursor gas forming a silicon precursor deposition;
providing an N 2 plasma conversion after dosing the stack to convert the silicon precursor deposition to a silicon nitride deposition; and
providing an H 2 plasma conversion after providing the N 2 plasma conversion and before a subsequent dosing of the silicon halide containing precursor to form a hydrogenated surface of the silicon nitride deposition to make the silicon nitride deposition more reactive to the silicon halide containing precursor than the silicon nitride deposition without the hydrogenated surface, wherein the subsequent dosing of the stack with the silicon halide containing precursor deposits another silicon precursor deposition on the hydrogenated surface.
2. The method, as recited in claim 1 , wherein during the dosing the stack, the stack is maintained at a temperature in the range of 200° C. to 400° C.
3. The method, as recited in claim 1 , wherein the dosing the stack is plasmaless.
4. The method, as recited in claim 1 , wherein each cycle is NH 3 free.
5. The method, as recited in claim 1 , wherein the providing the N 2 plasma conversion, comprises:
flowing an N 2 gas that is hydrogen free;
transforming the N 2 gas into a hydrogen free N 2 plasma;
exposing the stack to the N 2 plasma; and
stopping the flow of the N 2 gas.
6. The method, as recited in claim 5 , wherein the providing the H 2 plasma conversion, comprises:
flowing an H 2 gas;
transforming the H 2 gas into an H 2 plasma;
exposing the stack to the H 2 plasma; and
stopping the flow of the H 2 gas.
7. The method, as recited in claim 1 , wherein the silicon halide containing precursor is a silicon iodide.
8. The method, as recited in claim 1 , wherein the silicon halide containing precursor is a silicon chloride or silicon bromide.
9. The method, as recited in claim 1 , further comprising purging an H 2 plasma formed by the H 2 plasma conversion, after providing the H 2 plasma conversion and before dosing the stack.
10. The method, as recited in claim 1 , further comprising purging the silicon halide containing precursor gas after dosing the stack and before providing the N 2 plasma conversion.
11. An apparatus for depositing a silicon nitride atomic layer deposition on a stack, comprising a process chamber;
a substrate support within the process chamber;
a gas inlet for providing a gas into the process chamber;
a gas source for providing the gas to the gas inlet, wherein the gas source comprises:
a silicon containing precursor source;
an N 2 gas source; and
an H 2 gas source;
an exhaust pump for pumping gas from the process chamber;
an electrode for providing RF power in the process chamber;
at least one power source for providing power to the electrode; and
a controller controllably connected to the gas source and the at least one power source, wherein the controller comprises:
at least one processor; and
computer readable media, comprising:
computer code for depositing by atomic layer deposition a silicon nitride layer on a stack by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises:
dosing the stack with a silicon halide containing precursor by providing a silicon halide containing precursor gas from the silicon containing precursor source forming a silicon precursor deposition;
providing an N 2 plasma conversion after dosing the stack to convert the silicon precursor deposition to a silicon nitride deposition; and
providing an H 2 plasma conversion after providing the N 2 plasma conversion to form a hydrogenated surface of the silicon nitride deposition to make the silicon nitride deposition more reactive to the silicon halide containing precursor than the silicon nitride deposition without the hydrogenated surface, wherein a subsequent dosing of the stack with the silicon halide containing precursor deposits another silicon precursor deposition on the hydrogenated surface.
12. The apparatus, as recited in claim 11 , further comprising a heater for heating the substrate support.
13. The apparatus, as recited in claim 12 , wherein the computer readable media further comprises computer code for heating the substrate support to a temperature in the range of 200° C. to 400° C.
14. The apparatus, as recited in claim 11 , wherein the gas source is NH 3 free.
15. The apparatus, as recited in claim 11 , wherein the providing the N 2 plasma conversion, comprises:
flowing an N 2 gas that is hydrogen free;
transforming the N 2 gas into a hydrogen free N 2 plasma;
exposing the stack to the N 2 plasma; and
stopping the flow of the N 2 gas.
16. The apparatus, as recited in claim 15 , wherein the providing the H 2 plasma conversion, comprises:
flowing an H 2 gas;
transforming the H 2 gas into an H 2 plasma;
exposing the stack to the H 2 plasma; and
stopping the flow of the H 2 gas.
17. The apparatus, as recited in claim 11 , wherein each of the cycles of the plurality of cycles, comprises:
purging the silicon halide containing precursor gas after dosing the stack and before providing the N 2 plasma conversion; and
purging the H 2 plasma, after providing the H 2 plasma conversion and before dosing the stack.