Imaging device
A second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel and a third substrate including a processing circuit that performs signal processing on the pixel signal are provided. The first substrate, the second substrate, and the third substrate are stacked in this order. A semiconductor layer including the pixel circuit is divided by an insulating layer. The insulating layer divides the semiconductor layer to allow a center position of a continuous region of the semiconductor layer or a center position of a region that divides the semiconductor layer to correspond to a position of an optical center of the sensor pixel, in at least one direction on a plane of the sensor pixel perpendicular to an optical axis direction.
1. An imaging device, comprising:
a first substrate including a sensor pixel that includes a photoelectric conversion element that performs photoelectric conversion to output electric charges to a floating diffusion;
a second substrate including a pixel circuit that outputs a pixel signal on a basis of the electric charges outputted from the sensor pixel; and
a third substrate including a processing circuit that performs signal processing on the pixel signal,
wherein the first substrate, the second substrate, and the third substrate are stacked in this order,
wherein a semiconductor layer including the pixel circuit is divided by an insulating layer,
wherein the insulating layer divides the semiconductor layer to allow a center position of a continuous region of the semiconductor layer or a center position of a region that divides the semiconductor layer to correspond to a position of an optical center of the sensor pixel through the floating diffusion, in at least one direction on a plane of the sensor pixel perpendicular to an optical axis direction,
wherein the insulating layer divides the semiconductor layer to allow the center position of the continuous region of the semiconductor layer or the center position of the region that divides the semiconductor layer to substantially coincide with the position of the optical center of the sensor pixel, in the at least one direction on the plane of the sensor pixel perpendicular to the optical axis direction, and
wherein the center position of the insulating layer and the center position of the region where the photoelectric conversion element is provided are deviated by ⅓ or less of a formation pitch of the photoelectric conversion element.
2. The imaging device according to claim 1 , wherein a plurality of the sensor pixels are arranged in matrix in an in-plane direction of the first substrate.
3. The imaging device according to claim 2 , wherein the at least one direction comprises a row direction or a column direction in which the plurality of the sensor pixels are arranged.
4. The imaging device according to claim 2 , wherein the insulating layer divides the semiconductor layer across an entire surface of a pixel region where the plurality of the sensor pixels are provided.
5. The imaging device according to claim 1 , wherein the first substrate includes a plurality of the sensor pixels that photoelectrically convert beams of light in wavelength bands different from one another, and
wherein the insulating layer divides the semiconductor layer to allow a position of the optical center of the sensor pixel that photoelectrically converts light having a longest wavelength and the center position of the continuous region of the semiconductor layer or the center position of the region that divides the semiconductor layer to correspond to each other.
6. The imaging device according to claim 1 , wherein the first substrate is configured by stacking a first insulating layer on a first semiconductor substrate,
wherein the first substrate is attached to the semiconductor layer with the first insulating layer interposed therebetween, and
wherein an antireflection film is further provided on a surface of the semiconductor layer on side of the first substrate, the antireflection film having a refractive index of a value between a refractive index of the first substrate and a refractive index of the first insulating layer.
7. The imaging device according to claim 1 , wherein the photoelectric conversion element photoelectrically converts light having passed through a light receiving lens and a color filter, and
wherein the position of the optical center of the sensor pixel comprises a center position of a region provided with the photoelectric conversion element of one or a plurality of the sensor pixels serving as a unit for acquiring optical information.
8. The imaging device according to claim 7 , wherein, in a case where the unit for acquiring the optical information comprises the plurality of the sensor pixels, the position of the optical center of the sensor pixel comprises a center position of a joined region of regions provided with respective photoelectric conversion elements of the plurality of the sensor pixels.
9. The imaging device according to claim 8 , wherein the plurality of the sensor pixels are provided with one or both of the color filter and the light receiving lens in a continuous manner.
10. The imaging device according to claim 1 , wherein the sensor pixel further includes a transfer transistor electrically coupled to the photoelectric conversion element, and the floating diffusion that temporarily holds the electric charges outputted from the photoelectric conversion element via the transfer transistor, and
wherein the pixel circuit includes a reset transistor that resets a potential of the floating diffusion to a predetermined potential, an amplification transistor that generates, as the pixel signal, a signal of a voltage corresponding to a level of the electric charges held in the floating diffusion, and a selection transistor that controls an output timing of the pixel signal from the amplification transistor.
11. The imaging device according to claim 10 , wherein the reset transistor, the amplification transistor, and the selection transistor are each provided in the semiconductor layer.
12. The imaging device according to claim 10 , wherein a through-wiring line that electrically couples the floating diffusion of the first substrate and the pixel circuit of the second substrate to each other is provided to penetrate the insulating layer.
13. The imaging device according to claim 10 , wherein the first substrate includes the photoelectric conversion element, the transfer transistor, and the floating diffusion for each sensor pixel, and
wherein the second substrate includes the pixel circuit for each sensor pixel.
14. The imaging device according to claim 10 , wherein the first substrate includes the photoelectric conversion element, the transfer transistor, and the floating diffusion for each sensor pixel, and
wherein the second substrate includes the pixel circuit for each plurality of the sensor pixels.
15. The imaging device according to claim 10 , wherein the first substrate includes the photoelectric conversion element and the transfer transistor for each sensor pixel, and includes the floating diffusion shared by each plurality of the sensor pixels, and
wherein the second substrate includes the pixel circuit for each plurality of the sensor pixels sharing the floating diffusion.