MOSFET gate engineerinng with dipole films
A metal gate stack on a substrate comprises: an interfacial layer on the substrate; a high-κ metal oxide layer on the interfacial layer, the high-κ metal oxide layer comprising a dipole region adjacent to the interfacial layer, the dipole region comprising niobium (Nb); a high-κ metal oxide capping layer on the high-κ metal oxide layer; a positive metal-oxide-semiconductor (PMOS) work function material above the high-κ metal oxide capping layer; and a gate electrode above the PMOS work function material. The dipole region is formed by driving Nb species of a Nb-based film into the high-κ metal oxide layer to form a dipole region.
1. A method of forming a dipole region, the method comprising:
preparing an interfacial layer on a surface of a substrate;
depositing a high-metal oxide layer on the interfacial layer;
preparing a dipole film on the high-K metal oxide layer by exposing the surface of the substrate to a first precursor selected from the group consisting of NbCl 5 , NbB 5 , NbBr 5 , NbI 5 , NbF 5 , NbOCl 3 , and combinations thereof and a second precursor comprising nitrogen, oxygen, of one or more of CH 4 or ethanol using atomic layer deposition at a first substrate temperature in a range of 350° C. to 500° C.;
depositing a first high-K metal oxide capping layer on the substrate; and
exposing the substrate to a thermal treatment at a second substrate temperature of at least 700° C. to drive the dipole film into the high-K metal oxide layer and to form the dipole region comprising niobium adjacent to the interfacial layer.
2. The method of claim 1 , further comprising removing any remaining portion of the dipole film, and the first high-K metal oxide capping layer.
3. The method of claim 2 , further comprising depositing a second high-K metal oxide capping layer on the substrate after removing the first high-K metal oxide capping layer, and any remaining portion of the dipole film.
4. The method of claim 1 , wherein the first high-K metal oxide capping layer comprises titanium nitride (TIN), the high-K metal oxide layer comprises hafnium oxide (HfO 2 ), and the interfacial layer comprises silicon dioxide (SiO 2 ).
5. The method of claim 4 , wherein the second precursor further comprises a second compound selected from the group consisting of: NH 3 , N 2 , N 2 H 2 , N 2 H 4 , nitrogen-containing plasma, and combinations thereof.
6. The method of claim 4 , wherein the second precursor further comprises a second compound selected from the group consisting of H 2 O, H 2 O 2 , O 3 , ethanol, and combinations thereof.
7. The method of claim 4 , wherein the first precursor comprises NbCl 5 and the second precursor further comprises NH 3 .
8. The method of claim 4 , wherein depositing the first high-κ metal oxide capping layer and preparing the dipole film on the high-K metal oxide layer are both conducted in a first chamber.
9. The method of claim 3 , further comprising depositing a PMOS work function material on the substrate.
10. The method of claim 9 , further comprising depositing a gate material on the substrate.