Method and apparatus for flatband voltage tuning of high-k field effect transistors
View Patent ↗In one embodiment, the invention is a method and apparatus for flatband voltage tuning of high-k field effect transistors. One embodiment of a field effect transistor includes a substrate, a high-k dielectric layer deposited on the substrate, a gate electrode deposited on the high-k dielectric layer, and a dipole layer positioned between the substrate and the gate electrode, for shifting the threshold voltage of the field effect transistor.
1. A field effect transistor, comprising:
a substrate;
a high-k dielectric layer deposited on the substrate;
a gate electrode deposited on the high-k dielectric layer; and
a dipole layer positioned directly between the high-k dielectric layer and the gate electrode, for shifting a threshold voltage of the field effect transistor.
2. The field effect transistor of claim 1 , wherein a material from which the dipole layer is formed comprises titanium oxide.
3. The field effect transistor of claim 1 , wherein a material from which the dipole layer is formed comprises titanium nitride.
4. The field effect transistor of claim 1 , wherein the dipole layer comprises a metal oxide or a metal nitride.
5. The field effect transistor of claim 1 , wherein a material from which the dipole layer is formed is selected based on a desired direction of threshold voltage shift.
6. The field effect transistor of claim 1 , wherein a material from which the dipole layer is formed comprises: hafnium oxide, scandium oxide, zirconium oxide, zinc oxide, gallium oxide, or ruthenium oxide.
7. The field effect transistor of claim 1 , wherein the dipole layer has a thickness of approximately 0.3 to approximately two nm.
8. The field effect transistor of claim 1 , wherein the dipole layer has an associated shift parameter defined by electronegativities of the high-k dielectric layer, the gate electrode, and the dipole layer, wherein the shift parameter defines a direction in which the threshold voltage will shift.
9. The field effect transistor of claim 8 , wherein the shift parameter is approximately equal to a first quantity divided by a second quantity, the first quantity comprising an electronegativity of the gate electrode minus an electronegativity of the dipole layer, and the second quantity comprising an electronegativity of the high-k dielectric layer minus the electronegativity of the dipole layer.
10. The field effect transistor of claim 8 , wherein the shift parameter is greater than one.
11. The field effect transistor of claim 10 , wherein a material from which the dipole layer is formed comprises lanthanum oxide.
12. The field effect transistor of claim 10 , wherein a material from which the dipole layer is formed comprises lanthanum nitride.
13. The field effect transistor of claim 10 , wherein the field effect transistor is an n-type field effect transistor.
14. The field effect transistor of claim 10 , wherein a material from which the dipole layer is formed comprises: strontium oxide, calcium oxide, barium oxide, yttrium oxide, cerium oxide, magnesium oxide, praseodymium oxide, samarium oxide, europium oxide, gadolinium oxide, erbium oxide, or ytterbium oxide.
15. The field effect transistor of claim 8 , wherein the shift parameter is less than one.
16. The field effect transistor of claim 15 , wherein a material from which the dipole layer is formed comprises aluminum oxide.
17. The field effect transistor of claim 15 , wherein a material from which the dipole layer is formed comprises aluminum nitride.
18. The field effect transistor of claim 15 , wherein the field effect transistor is a p-type field effect transistor.
19. The field effect transistor of claim 15 , wherein a material from which the dipole layer is formed comprises: tantalum oxide, manganese oxide, vanadium oxide, niobium oxide, germanium oxide, or silicon oxide.