Reducing aspect ratio dependent etch with direct current bias pulsing
Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing. The ability to synchronize and control waveform characteristics of a voltage waveform bias established on a substrate during processing allows for an improved control of the generated plasma and process of forming, for example, high-aspect ratio features in the surface of the substrate by a reactive ion etching process. As a result, greater precision for plasma processing can be achieved, which is described herein in more detail.
1. A method of processing a substrate, comprising performing a processing sequence on the substrate disposed within a processing region of a plasma processing chamber, wherein the processing sequence comprises:
a first process sequence interval that comprises:
delivering, by a voltage waveform generator, a first burst of first asymmetric voltage pulses to a bias electrode disposed within the plasma processing chamber, wherein the first burst of first asymmetric voltage pulses is provided for a first period of time; and
delivering, by use of a radio frequency (RF) generator, an RF signal to an RF electrode disposed within the plasma processing chamber during the first period of time, wherein the RF signal provided during the first period of time comprises a first RF power level;
a second process sequence interval that comprises:
halting the delivery of the first burst of first asymmetric voltage pulses for a second period of time;
delivering, by use of the RF generator, the RF signal to the RF electrode during the second period of time, wherein the RF signal provided during the second period of time comprises a second RF power level;
a third process sequence interval that comprises:
continuing to halt the delivery of the first burst of first asymmetric voltage pulses for a third period of time; and
halting the delivery of the RF signal to the RF electrode for the third period of time; and
periodically clearing etch by-products during the second process sequence.
2. The method of claim 1 , further comprising sequentially repeating the first, the second and the third process sequence intervals a plurality of times.
3. The method of claim 1 , wherein the third period of time is longer than the first period of time and the second period of time.
4. The method of claim 3 , wherein the second RF power level is less than the first RF power level.
5. The method of claim 1 , wherein delivering the first burst of first asymmetric voltage pulses comprises delivering a plurality of asymmetric voltage pulses that each have a pulse on-time that is between 5% and 95% of a pulse period, and a repetition frequency that is between 200 kHz and 500 KHz.
6. The method of claim 5 , wherein the delivering the plurality of asymmetric voltage pulses by the voltage waveform generator includes applying a negative voltage to the bias electrode during the pulse on-time.
7. The method of claim 6 , wherein the first period of time is between 0.1 milliseconds (ms) and 0.5 ms.
8. The method of claim 5 , wherein the first period of time that is between 0.1 milliseconds (ms) and 0.5 ms.
9. The method of claim 8 , wherein the first period of time is shorter than the second period of time, and the second period of time is shorter than the third period of time.
10. The method of claim 5 , wherein the RF electrode comprises a coil and the bias electrode comprises an electrode disposed within a substrate support within the plasma processing chamber.
11. The method of claim 1 , wherein the third period of time is between 0.5 ms and 1.5 ms and a sum of the first period of time, the second period of time, and the third period of time is between 2 ms and 3 ms.
12. The method of claim 11 , further comprising sequentially repeating the first, the second and the third process sequence intervals a plurality of times.
13. The method of claim 12 , wherein the third period of time is longer than the first period of time and the second period of time.
14. The method of claim 13 , wherein the second RF power level is less than the first RF power level.
15. A plasma processing chamber, comprising:
a voltage waveform generator;
a radio frequency (RF) generator;
a bias electrode disposed within the plasma processing chamber;
an RF electrode disposed within the plasma processing chamber;
a vacuum pump; and
a memory for storing a program to be executed by a processor, the program comprising instructions when executed cause:
a processing sequence to be performed that comprises:
a first process sequence interval that comprises:
delivering, by the voltage waveform generator, a first burst of first asymmetric voltage pulses to the bias electrode, wherein the first burst of first asymmetric voltage pulses is provided for a first period of time; and
delivering, by use of the RF generator, an RF signal to the RF electrode during the first period of time, wherein the RF signal provided during the first period of time comprises a first RF power level;
a second process sequence interval that comprises:
halting the delivery of the first burst of first asymmetric voltage pulses for a second period of time;
delivering, by use of the radio frequency (RF) generator, the RF signal to the RF electrode during the second period of time, wherein the RF signal provided during the second period of time comprises a second RF power level; and
a third process sequence interval that comprises:
continuing to halt the delivery of the first burst of first asymmetric voltage pulses for a third period of time; and
halting the delivery of the RF signal to the RF electrode for the third period of time; and
periodically clearing, by use of the vacuum pump, etch by-products during the second process sequence.
16. The plasma processing chamber of claim 15 , wherein the program further comprises instructions that when executed cause:
the first, the second and the third process sequence intervals to be sequentially repeated a plurality of times.
17. The plasma processing chamber of claim 15 , wherein the third period of time is longer than the first period of time and the second period of time.
18. The plasma processing chamber of claim 17 , wherein the second RF power level is less than the first RF power level.
19. The plasma processing chamber of claim 15 , wherein delivering the first burst of first asymmetric voltage pulses comprises delivering a plurality of asymmetric voltage pulses that each have a pulse on-time that is between 5% and 95% of a pulse period, and a repetition frequency that is between 200 kHz and 500 KHz.