Immersion cooling for integrated circuit devices
A two-phase immersion cooling system for an integrated circuit assembly may be formed utilizing boiling enhancement structures formed on or directly attached to heat dissipation devices within the integrated circuit assembly, formed on or directly attached to integrated circuit devices within the integrated circuit assembly, and/or conformally formed over support devices and at least a portion of an electronic board within the integrated circuit assembly. In still a further embodiment, the two-phase immersion cooling system may include a low boiling point liquid including at least two liquids that are substantially immiscible with one another.
1. An apparatus, comprising:
an integrated circuit device electrically attached to a first surface of an electronic substrate;
a support device electrically attached to the first surface of the electronic substrate, wherein the support device is electrically attached to the integrated circuit device; and
a conformal boiling enhancement coating covering the support device and a portion of the first surface of the electronic substrate, the boiling enhancement coating to be in direct contact with a liquid in which both the integrated circuit device and the support device are to be immersed.
2. The apparatus of claim 1 , wherein the support device comprises a voltage regulator.
3. The apparatus of claim 1 , wherein the conformal boiling enhancement coating comprises a micro-porous coating.
4. The apparatus of claim 3 , wherein the micro-porous coating comprises conductive particles dispersed in an epoxy material.
5. The apparatus of claim 4 , wherein the conductive particles comprise one of diamond particles and alumina particles.
6. An apparatus, comprising:
a fluid containment structure;
a package substrate within the fluid containment structure;
an integrated circuit device coupled to the package substrate, the integrated circuit device having a first surface and an opposing second surface; and
a boiling enhancement structure directly attached to the second surface of the integrated circuit device;
a dielectric low-boiling point liquid within the fluid containment structure and in direct contact with the boiling enhancement structure;
a containment fluid layer on the dielectric low-boiling point liquid, wherein the containment fluid layer is lighter than and substantially immiscible with the dielectric low-boiling point liquid;
a capping fluid layer on the containment fluid layer, wherein the capping fluid layer comprises silicone oil and is lighter than, and substantially immiscible with, the containment fluid layer; and
a condensation structure extending though the containment structure.
7. The apparatus of claim 6 , wherein the boiling enhancement structure is adhered to the second surface of the integrated circuit device with a thermally conductive adhesive.
8. The apparatus of claim 7 , wherein the boiling enhancement structure comprises one of a carbon foam, a metal foam, a metal mesh, and a sintered metal powder layer.
9. The apparatus of claim 7 , wherein the thermally conductive adhesive is a solder material.
10. The apparatus of claim 6 , wherein the boiling enhancement structure comprises metal particles sintered to the second surface of the integrated circuit device.
11. The apparatus of claim 6 , further comprising a heat generation source disposed within the dielectric low-boiling point liquid.
12. The apparatus of claim 6 , wherein the dielectric low-boiling point liquid comprises a fluorocarbon-based fluid.
13. The apparatus of claim 6 , wherein the containment fluid layer comprises water.
14. The apparatus of claim 6 , wherein the boiling enhancement structure comprises a carbon foam or a metal foam.
15. The apparatus of claim 14 , wherein the metal foam comprises copper or nickel.