Power electronic device assemblies having heat spreaders and electrically insulating layer
View Patent ↗Power electronics device assemblies, circuit board assemblies, and power electronics assemblies are disclosed. In one embodiment, a power electronics device assembly includes an S-cell including a first metal layer comprising a first surface having a recess, a first graphite layer bonded to the first metal layer, a second metal layer bonded to the first graphite layer, a solder layer disposed on the second metal layer, and an electrically insulating layer bonded to the solder layer. The power electronics device assembly may further include a power electronics device disposed within the recess of the first surface of the first metal layer.
1. A power electronics device assembly comprising:
an S-cell comprising:
a first metal layer comprising a first surface having a recess;
a graphite layer bonded to the first metal layer;
a second metal layer bonded to the graphite layer;
a solder layer disposed on the second metal layer; and
an electrically insulating layer bonded to the solder layer; and
a power electronics device disposed within the recess of the first surface of the first metal layer.
2. The power electronics device assembly of claim 1 , wherein the electrically insulating layer is made from silicon nitride.
3. The power electronics device assembly of claim 1 , wherein the S-cell has a length that is greater than a width.
4. The power electronics device assembly of claim 1 , further comprising:
a first brazing layer between the first metal layer and the graphite layer; and
a second brazing layer between the second metal layer and the graphite layer.
5. A circuit board assembly comprising:
a substrate that is electrically insulating;
a power electronics device assembly fully embedded in the substrate, the power electronics device assembly comprising:
an S-cell comprising:
a first metal layer comprising a first surface having a recess;
a graphite layer bonded to the first metal layer;
a second metal layer bonded to the graphite layer;
a solder layer disposed on the second metal layer; and
an electrically insulating layer bonded to the solder layer; and
a power electronics device disposed within the recess of the first surface of the first metal layer.
6. The circuit board assembly of claim 5 , further comprising a plurality of electrically conductive layers embedded within the substrate.
7. The circuit board assembly of claim 5 , further comprising a plurality of vias embedded in the substrate and thermally coupled to the power electronics device.
8. The circuit board assembly of claim 5 , wherein the electrically insulating layer is made from silicon nitride.
9. The circuit board assembly of claim 5 , wherein the S-cell has a length that is greater than a width.
10. The circuit board assembly of claim 5 , wherein the S-cell further comprises:
a first brazing layer between the first metal layer and the graphite layer; and
a second brazing layer between the second metal layer and the graphite layer.
11. A power electronics assembly comprising:
a cold plate; and
a circuit board assembly affixed to a first surface of the cold plate, the circuit board assembly comprising:
a substrate that is electrically insulating;
a power electronics device assembly fully embedded in the substrate, the power electronics device assembly comprising:
an S-cell comprising:
a first metal layer comprising a first surface having a recess;
a graphite layer bonded to the first metal layer;
a second metal layer bonded to the graphite layer;
a solder layer disposed on the second metal layer; and
an electrically insulating layer bonded to the solder layer; and
a power electronics device disposed within the recess of the first surface of the first metal layer.
12. The power electronics assembly of claim 11 , wherein the circuit board assembly is affixed to the first surface of the cold plate by a bond layer.
13. The power electronics assembly of claim 11 , wherein the circuit board assembly is affixed to the first surface of the cold plate by fasteners and a thermal grease layer.
14. The power electronics assembly of claim 11 , wherein the S-cell includes an asymmetrical profile.
15. The power electronics assembly of claim 11 , wherein;
the cold plate comprises a fluid chamber, a fluid inlet, and a fluid outlet; and
the fluid inlet and the fluid outlet are thermally coupled to the fluid chamber.
16. The power electronics assembly of claim 11 , wherein the circuit board assembly further comprises a plurality of electrically conductive layers embedded within the substrate.
17. The power electronics assembly of claim 11 , wherein the circuit board assembly further comprises a plurality of vias embedded in the substrate and thermally coupled to the power electronics device.
18. The power electronics assembly of claim 11 , wherein the electrically insulating layer is made from silicon nitride.
19. The power electronics assembly of claim 11 , wherein the S-cell has a length that is greater than a width.
20. The power electronics assembly of claim 11 , wherein the S-cell further comprises:
a first brazing layer between the first metal layer and the graphite layer; and
a second brazing layer between the second metal layer and the graphite layer.