Granted Patent B2

US 12,239,029 · App. 18/520,462 · Granted Feb 25, 2025

Inventor: Faraz Najafi (San Francisco, CA)

Assignee: PSIQUANTUM CORP.

H10N60/84H10N60/01H10N60/30H10N60/85

Abstract

Claims (32)

1. A device, comprising:

a superconductor layer;

a piezoelectric layer positioned adjacent to the superconductor layer, wherein:

the piezoelectric layer is positioned such that a portion of the piezoelectric layer overlaps with the superconductor layer, the portion of the piezoelectric layer having a length that is greater than a superconducting coherence length of the superconductor layer;

the piezoelectric layer is configured to apply a first strain to the superconductor layer in response to receiving a first voltage that is below a voltage threshold;

the superconductor layer is configured to operate in a superconducting state while: (i) the device is maintained below a superconducting threshold temperature for the superconductor layer, (ii) is supplied with current below a superconducting threshold current for the superconductor layer, and (iii) the piezoelectric layer applies the first strain to the superconductor layer;

the piezoelectric layer is configured to apply a second strain to the superconductor layer in response to receiving a second voltage that is above the voltage threshold; and

the superconductor layer is configured to operate in an insulating state while: (i) the device is maintained below the superconducting threshold temperature, (ii) is supplied with the current below the superconducting threshold current, and (iii) the piezoelectric layer applies the second strain to the superconductor layer.

2. The device of claim 1 , wherein the length of the piezoelectric layer is in a range between the superconducting coherence length and 10 times the superconducting coherence length.

3. The device of claim 1 , wherein the length of the portion of the piezoelectric layer is less than 100 micron.

4. The device of claim 1 , wherein the portion is sized such that, while the second strain is applied to the superconductor layer, an insulating region is created in the superconductor layer, the insulating region having an insulating length that is longer than the superconducting coherence length.

5. The device of claim 4 , wherein the length of the insulating region is in a range of 5 to 20 times the superconducting coherence length.

6. The device of claim 4 , wherein the insulating region inhibits electron tunneling from a first side of the superconductor layer to a second side of the superconductor layer.

7. The device of claim 1 , further comprising:

a voltage source electrically coupled to the piezoelectric layer of the device and configured to supply any of the first voltage and the second voltage; and

an output component coupled to the superconductor layer.

8. The device of claim 7 , wherein the output component is configured to measure one or more of: a resistance of the superconductor layer, a current through the superconductor layer, and a voltage drop across the superconductor layer.

9. The device of claim 1 , wherein the piezoelectric layer is shaped to concentrate electrical fields around the superconductor layer.

10. The device of claim 1 , wherein the piezoelectric layer is positioned and adapted to inhibit oxidation of the superconductor layer.

11. The device of claim 1 , wherein the piezoelectric layer and the superconductor layer are positioned substantially perpendicular to one another.

12. The device of claim 1 , wherein the piezoelectric layer is lattice-matched to the superconductor layer.

13. The device of claim 1 , further comprising a substrate, wherein the superconductor layer or the piezoelectric layer is deposited on the substrate.

14. The device of claim 13 , wherein:

the superconductor layer is positioned on top of the piezoelectric layer, which is deposited on the substrate; and

the device further comprises a second piezoelectric layer positioned on top of the superconductor layer.

15. The device of claim 14 , further comprising:

a second superconductor layer positioned on top of the second piezoelectric layer and coupled in parallel with the superconductor layer.

16. The device of claim 1 , wherein a thickness of the superconductor layer is within 10% of a superconductor-to-insulator transition thickness.

17. The device of claim 1 , further comprising two or more contacts configured to apply an electrical field to the superconductor layer.

18. The device of claim 17 , wherein the two or more contacts comprise a first contact at a first end of the piezoelectric layer and a second contact at a second end of the piezoelectric layer, the second end being opposite of the first end.

19. The device of claim 18 , wherein the two or more contacts are shaped such that the electrical field is substantially concentrated at a center of the two or more contacts.

20. The device of claim 17 , further comprising a voltage source electrically coupled to the piezoelectric layer of the device via the two or more contacts and configured to supply any of the first voltage and the second voltage.

Continuity (3)

References Cited (254)