IP Library › Granted Patent US 12,243,824
Granted Patent B2
US 12,243,824 · App. 18/525,958 · Granted Mar 4, 2025

Semiconductor devices and methods of manufacture

Inventors: Shang-Yun Hou (Jubei, TW); Hsien-Pin Hu (Zhubei, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
H01L23/5381H01L21/486H01L21/56H01L23/3121H01L23/49861H01L23/5384
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Quick Facts
Patent No.
US 12,243,824
App. No.
18/525,958
Granted
Mar 4, 2025
Kind
B2
Abstract

Semiconductor devices and methods of manufacture are provided. In embodiments the semiconductor device includes a substrate, a first interposer bonded to the substrate, a second interposer bonded to the substrate, a bridge component electrically connecting the first interposer to the second interposer, two or more first dies bonded to the first interposer; and two or more second dies bonded to the second interposer.

Claims (55)

1. A device comprising:

a first semiconductor die bonded to a first interposer;

a first encapsulant around the first semiconductor die;

a second semiconductor die bonded to a second interposer, wherein the second interposer is different from the first interposer;

a second encapsulant around the second semiconductor die, wherein the second encapsulant is different than the first encapsulant;

a third interposer electrically connecting the first interposer with the second interposer;

a first redistribution structure electrically connected to both the first interposer and the second interposer;

a third encapsulant disposed between the first redistribution structure and the first interposer and between the first redistribution structure and the second interposer;

a first fan out via in physical contact with a first interposer via in the first interposer, the first fan out via extending through the third encapsulant to physically contact the third interposer; and

a second fan out via in physical contact with a second interposer via in the second interposer, the second fan out via extending through the third encapsulant to physically contact the third interposer; and

a substrate bonded to the first redistribution structure opposite both the first interposer and the second interposer.

2. The device of claim 1 , wherein the third interposer is embedded within the third encapsulant.

3. The device of claim 2 , further comprising a first integrated fan out via extending from a first side of the third encapsulant adjacent to the first interposer to a second side of the third encapsulant adjacent to the first redistribution structure, wherein the first integrated fan out via electrically couples the first interposer with the first redistribution structure.

4. The device of claim 3 , further comprising a second integrated fan out via extending from the first side of the third encapsulant to the second side of the third encapsulant, wherein the second integrated fan out via electrically couples the second interposer with the first redistribution structure.

5. The device of claim 1 , wherein the substrate is bonded to the first redistribution structure by solder.

6. The device of claim 1 , further comprising the fourth encapsulant encapsulating the first interposer and the second interposer.

7. The device of claim 1 , further comprising:

a third semiconductor die bonded to the second interposer; and

a fourth encapsulant around the second encapsulant and the third semiconductor die, the third encapsulant being different than the second encapsulant.

8. The device of claim 1 , wherein an electrical element of the first redistribution structure directly contacts a through via of the third interposer.

9. A device comprising:

a first semiconductor die bonded to a first interposer;

a second semiconductor die bonded to the first interposer;

a first encapsulant encapsulating the first semiconductor die;

a second encapsulant encapsulating the first encapsulant and the second semiconductor die, the second encapsulant being different than the first encapsulant;

a third semiconductor die bonded to a second interposer, wherein the second interposer is different from the first interposer;

a fourth semiconductor die bonded to the second interposer;

a third encapsulant encapsulating the third semiconductor die;

a fourth encapsulant encapsulating the third encapsulant and the fourth semiconductor die, the fourth encapsulant being different than the third encapsulant;

a fifth encapsulant encapsulating the second encapsulant and the fourth encapsulant;

a sixth encapsulant on a first side of the first interposer and on a first side of the second interposer;

a first through encapsulant via extending through the sixth encapsulant from the first side of the first interposer to an opposite side of the sixth encapsulant;

a second through encapsulant via extending through the sixth encapsulant from the first side of the second interposer to the opposite side of the sixth encapsulant; and

a bridge device electrically connecting the first interposer to the second interposer.

10. The device of claim 9 , wherein the bridge device is embedded within the sixth encapsulant.

11. The device of claim 9 , further comprising a first redistribution structure adjacent to the sixth encapsulant opposite both the first interposer and the second interposer.

12. The device of claim 11 , wherein the bridge device is integrated into the first redistribution structure.

13. The device of claim 11 , further comprising a substrate electrically coupled to the first redistribution structure opposite the first interposer and the second interposer.

14. The device of claim 13 , wherein the substrate is a printed circuit board.

15. A device comprising:

a first semiconductor device bonded to a first interposer;

a first encapsulant around the first semiconductor device;

a second semiconductor device bonded to a second interposer, wherein the second interposer is different from the first interposer;

a second encapsulant around the second semiconductor device, wherein the second encapsulant is different than the first encapsulant;

a third semiconductor device bonded to the second interposer;

a third encapsulant encapsulating the second encapsulant and the third semiconductor device, the third encapsulant being different than the second encapsulant;

a first redistribution structure on the first interposer;

a second redistribution structure on the second interposer;

a first substrate bonded to the first redistribution structure opposite the first interposer and bonded to the second redistribution structure opposite the second interposer; and

a bridge component disposed within the first substrate, wherein the bridge component electrically connects the first interposer with the second interposer.

16. The device of claim 15 , wherein the first substrate is bonded to the first redistribution structure by solder material.

17. The device of claim 15 , wherein the first substrate is a printed circuit board.

18. The device of claim 15 , wherein the first interposer is separated from the second interposer by a gap.

19. The device of claim 18 , wherein the bridge component spans across the gap between the first interposer and the second interposer.

20. The device of claim 15 , wherein the bridge component is in direct physical contact with first solder material bonded between the first substrate and the first redistribution structure and second solder material bonded between the first substrate and the second redistribution structure.

Continuity (4)
Continuation 17873876 · Jul 26, 2022
Division 16887458 · May 29, 2020
Provisional Application 62884517 · Aug 8, 2019
Related Publication 20240105627A1 · Mar 28, 2024
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