Semiconductor devices and methods of manufacture
A semiconductor device and method of manufacture are provided wherein semiconductor devices are attached over a semiconductor substrate. An opening is formed within metallization layers over the semiconductor substrate and the semiconductor substrate, and an encapsulant is placed to fill the opening. Once the encapsulant is placed, the semiconductor substrate is singulated to separate the devices. By recessing the material of the metallization layers and forming the opening, delamination damage may be reduced or eliminated.
1. A method of manufacturing a semiconductor device comprising:
forming metallization layers over active devices, the active devices being at least partially within a semiconductor substrate;
forming through substrate vias extending through the semiconductor substrate;
forming redistribution layers in direct physical contact with the through substrate vias;
placing a passivation layer in direct physical contact over the redistribution layers;
adhering a first semiconductor device to the metallization layers;
adhering a second semiconductor device to the metallization layers; and
molding an encapsulant around the first semiconductor device and the second semiconductor device, the encapsulant having indentations extending into the metallization layers and the semiconductor substrate.
2. The method of claim 1 , wherein the encapsulant comprises a molding compound.
3. The method of claim 1 , wherein the encapsulant comprises silicon oxide.
4. The method of claim 3 , further comprising attaching a support structure to the silicon oxide.
5. The method of claim 1 , wherein the encapsulant reduces in width as the encapsulant extends into the semiconductor substrate.
6. The method of claim 1 , further comprising extending a second encapsulant through the passivation layer and into the semiconductor substrate.
7. The method of claim 1 , wherein the passivation layer has a curved sidewall.
8. A method of manufacturing a semiconductor device comprising:
extending through substrate vias through a semiconductor substrate;
bonding a first semiconductor die to a metallization layer over the semiconductor substrate;
bonding a second semiconductor die to the metallization layer;
forming an opening through the metallization layer and into the semiconductor substrate between the first semiconductor die and the second semiconductor die;
extending a first encapsulant between the first semiconductor die and the second semiconductor die and into the opening, the first encapsulant making physical contact with the semiconductor substrate;
connecting redistribution layers to the through substrate vias;
forming a passivation layer adjacent to the redistribution layers; and
extending a second encapsulant through the redistribution layers to make physical contact with the semiconductor substrate.
9. The method of claim 8 , wherein the first encapsulant has a first width adjacent to the metallization layer and a second width less than the first width adjacent to the semiconductor substrate.
10. The method of claim 8 , wherein the first encapsulant has a first surface that is planar with a second surface of the semiconductor substrate.
11. The method of claim 8 , wherein the first encapsulant is an oxide material.
12. The method of claim 11 , further comprising attaching a support structure to the oxide material.
13. The method of claim 8 , wherein the second encapsulant comprises a non-polymer gap-filler material.
14. The method of claim 8 , wherein the second encapsulant has an irregular shape penetrating into the redistribution layers and the semiconductor substrate.
15. A method of manufacturing a semiconductor device, the method comprising:
bonding a first semiconductor die to a device, the device comprising a semiconductor substrate;
bonding a second semiconductor die to the device;
forming an opening in the semiconductor substrate;
filling the opening with a fill material;
thinning the semiconductor substrate to expose through substrate vias;
forming redistribution layers in electrical connection with the through substrate vias;
applying a passivation layer over the redistribution layers; and
after filling the opening with the fill material, singulating the semiconductor substrate through the fill material within the opening.
16. The method of claim 15 , further comprising forming a second opening extending through the passivation layer and into the semiconductor substrate prior to the singulating the semiconductor substrate.
17. The method of claim 16 , wherein the second opening has an irregular shape.
18. The method of claim 15 , wherein the filling the opening fills the opening with an oxide material.
19. The method of claim 18 , further comprising attaching a support structure to the oxide material.
20. The method of claim 15 , wherein the filling the opening fills the opening with a molding compound.