Bonded semiconductor structure utilizing concave/convex profile design for bonding pads
A bonded semiconductor structure includes a first device wafer and a second device wafer. The first device includes a first dielectric layer, a first bonding pad disposed in the first dielectric layer, and a first bonding layer on the first dielectric layer. The second device wafer includes a second dielectric layer, a second bonding layer on the second dielectric layer, and a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer. A conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer include a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface.
1. A bonded semiconductor structure, comprising:
a first device wafer, comprising:
a first dielectric layer;
a first bonding pad disposed in the first dielectric layer; and
a first bonding layer on the first dielectric layer; and
a second device wafer, comprising:
a second dielectric layer;
a second bonding layer on the second dielectric layer; and
a second bonding pad disposed in the second dielectric layer and extending through the second bonding layer and at least a portion of the first bonding layer, wherein a conductive bonding interface between the first bonding pad and the second bonding pad and a dielectric bonding interface between the first bonding layer and the second bonding layer comprise a step-height in a direction perpendicular to the dielectric bonding interface and the conductive bonding interface, wherein a height of the step-height is larger than a thickness of the first bonding layer.
2. The bonded semiconductor structure according to claim 1 , wherein the first bonding layer directly contacts a sidewall of the second bonding pad.
3. The bonded semiconductor structure according to claim 1 , further comprising an air gap between a sidewall of the first bonding layer and a sidewall of the second bonding pad.
4. The bonded semiconductor structure according to claim 1 , wherein an angle between a sidewall of the first bonding layer and a top surface of the first bonding pad is larger than 90 degrees.
5. The bonded semiconductor structure according to claim 1 , wherein a thickness of the first bonding layer and a thickness of the second bonding layer are different.
6. The bonded semiconductor structure according to claim 1 , wherein a thickness of the first bonding pad is smaller than a thickness of the second bonding pad.
7. The bonded semiconductor structure according to claim 1 ,
wherein the second bonding pad comprises a step portion adjacent to the dielectric bonding interface.
8. The bonded semiconductor structure according to claim 1 , wherein the first bonding layer and the second bonding layer comprise silicon carbonitride (SiCN), the first bonding pad and the second bonding pad comprise copper (Cu).
9. A bonded semiconductor structure, comprising:
a first device wafer, comprising:
a first dielectric layer;
a first bonding pad disposed in the first dielectric layer; and
a first bonding layer on the first dielectric layer; and
a second device wafer, comprising:
a second dielectric layer;
a second bonding layer on the second dielectric layer and having a dielectric bonding interface with the first bonding layer; and
a second bonding pad disposed in the second dielectric layer, protruding through the second bonding layer and at least a portion of the first bonding layer and having a conductive bonding interface with the first bonding pad, wherein the dielectric bonding interface directly contacts a sidewall of the second bonding pad.
10. The bonded semiconductor structure according to claim 9 ,
wherein a height from the dielectric bonding interface to the conductive bonding interface and a thickness of the first bonding layer are the same.
11. The bonded semiconductor structure according to claim 9 ,
wherein a height from the dielectric bonding interface to the conductive bonding interface is larger than a thickness of the first bonding layer.
12. The bonded semiconductor structure according to claim 9 ,
wherein a height from the dielectric bonding interface to the conductive bonding interface is smaller than a thickness of the first bonding layer.
13. The bonded semiconductor structure according to claim 9 ,
wherein the first bonding layer directly contacts the sidewall of the second bonding pad.
14. The bonded semiconductor structure according to claim 9 ,
wherein an angle between a sidewall of the first bonding layer and a top surface of the first bonding pad is larger than 90 degrees.
15. The bonded semiconductor structure according to claim 9 ,
wherein a thickness of the first bonding layer and a thickness of the second bonding layer are different.
16. The bonded semiconductor structure according to claim 9 ,
wherein a thickness of the first bonding pad is smaller than a thickness of the second bonding pad.
17. The bonded semiconductor structure according to claim 9 ,
wherein a portion of the sidewall of the second bonding pad in direct contact with the dielectric bonding interface has a step profile.