Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.
1. A semiconductor manufacturing apparatus, comprising:
a chamber,
wherein the chamber is a post exposure bake chamber;
a semiconductor substrate support in the chamber;
a gas flow inlet in the chamber;
a gas flow exhaust in the chamber;
a temperature sensor in the chamber;
a humidity sensor in the chamber;
a gas heater; and
a controller, programmed to:
control a gas flow into the chamber through the gas flow inlet at a flow rate ranging from 5 L/min to 40 L/min,
control exhaust gas flow from the chamber through the gas flow exhaust at a flow rate ranging from 10 L/min to 50 L/min,
control the gas flowing through the gas flow exhaust at a higher flow rate than the gas flowing through the gas flow inlet,
control a temperature of the gas flowing into the chamber to a temperature ranging from 100° C. to 190° C., and
control relative humidity in the chamber.
2. The semiconductor manufacturing apparatus of claim 1 , wherein the semiconductor substrate support includes a heating element.
3. The semiconductor manufacturing apparatus of claim 1 , wherein the controller is programmed to control the gas flow into the chamber through the gas flow inlet at a flow rate ranging from 10 L/min to 30 L/min.
4. The semiconductor manufacturing apparatus of claim 1 , wherein the controller is programmed to control the exhaust gas flow from the chamber through the gas flow exhaust at a flow rate ranging from 20 L/min to 40 L/min.
5. The semiconductor manufacturing apparatus of claim 1 , wherein the controller is programmed to control the temperature of the gas flowing into the chamber at a temperature ranging from 100° C. to 170° C.
6. The semiconductor manufacturing apparatus of claim 1 , wherein the controller is programmed to control relative humidity in the chamber at a relative humidity ranging from 1% to 50%.
7. The semiconductor manufacturing apparatus of claim 1 , wherein the controller is programmed to control relative humidity in the chamber at a relative humidity ranging from 10% to 40%.
8. An apparatus, comprising:
a chamber,
wherein the chamber is a post exposure bake chamber;
a substrate support in the chamber;
a gas flow inlet in the chamber;
a gas flow exhaust in the chamber;
a temperature sensor in the chamber;
a humidity sensor in the chamber;
a humidifier/dehumidifier connected to the chamber;
a gas supply connected to the gas flow inlet;
a gas heater in line with the gas flow inlet; and
a controller, programmed to:
control a gas flow through the gas flow inlet at a flow rate ranging from 5 L/min to 40 L/min,
control an exhaust gas flow through the gas flow exhaust at a flow rate ranging from 10 L/min to 50 L/min,
control the gas flowing through the gas flow exhaust at a higher flow rate than the gas flowing through the gas flow inlet,
control the gas heater to control a temperature of a gas flowing into the chamber at a temperature ranging from 100° C. to 190° C., and
control the humidifier/dehumidifier.
9. The apparatus of claim 8 , wherein the substrate support includes a heating element.
10. The apparatus of claim 8 , wherein the controller is further programmed to control a temperature of a gas flowing into the chamber at a temperature ranging from 100° C. to 170° C.
11. The apparatus of claim 8 , wherein the controller is programmed to control relative humidity in the chamber at a relative humidity ranging from 1% to 50%.
12. An apparatus, comprising:
a chamber,
wherein the chamber is a post exposure bake chamber;
a substrate support disposed in the chamber;
a gas flow inlet in a sidewall of the chamber;
a gas flow exhaust in a top of the chamber;
a humidifier/dehumidifier connected to the chamber;
a gas supply connected to the gas flow inlet;
a heater configured to heat a gas from the gas supply;
a temperature sensor disposed in the chamber;
a humidity sensor disposed in the chamber; and
a controller, programmed to:
control gas flowing through the gas flow inlet at a flow rate ranging from 5 L/min to 40 L/min,
control gas flowing through the gas flow exhaust at a flow rate ranging from 10 L/min to 50 L/min,
control the gas flowing through the gas flow exhaust at a higher flow rate than the gas flowing through the gas flow inlet,
control the heater to control a temperature of gas flowing into the chamber at a temperature ranging from 100° C. to 190° C.,
control the humidifier/dehumidifier,
monitor the temperature sensor; and
monitor the humidity sensor.
13. The apparatus of claim 12 , wherein the controller is programmed to control a temperature of gas flowing into the chamber at a temperature ranging from 100° C. to 170° C.
14. The apparatus of claim 12 , wherein the controller is programmed to control relative humidity in the chamber at a relative humidity ranging from 1% to 50%.
15. The apparatus of claim 8 , wherein the controller is programmed to control the gas flow into the chamber through the gas flow inlet at a flow rate ranging from 10 L/min to 30 L/min, and control the exhaust gas flow from the chamber through the gas flow exhaust at a flow rate ranging from 20 L/min to 40 L/min.
16. The apparatus of claim 12 , wherein the controller is programmed to control the gas flow into the chamber through the gas flow inlet at a flow rate ranging from 10 L/min to 30 L/min, and control the exhaust gas flow from the chamber through the gas flow exhaust at a flow rate ranging from 20 L/min to 40 L/min.
17. The apparatus of claim 1 , wherein the controller is further programmed to control a temperature of a gas flowing into the chamber at a temperature ranging from 100° C. to 150° C.
18. The apparatus of claim 8 , wherein the controller is further programmed to control a temperature of a gas flowing into the chamber at a temperature ranging from 100° C. to 150° C.
19. The apparatus of claim 12 , wherein the controller is further programmed to control a temperature of a gas flowing into the chamber at a temperature ranging from 100° C. to 150° C.
20. The apparatus of claim 8 , wherein the controller is programmed to control relative humidity in the chamber at a relative humidity ranging from 10% to 40%.