IP Library › Granted Patent US 12,252,778
Granted Patent B2
US 12,252,778 · App. 17/930,728 · Granted Mar 18, 2025

Apparatus for and method of manufacturing semiconductor device

Inventors: Keewon Kim (Suwon-si, KR); Daehan Kim (Suwon-si, KR); Minkyung Lee (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO, LTD.
C23C14/543C23C14/24C23C14/56H10K10/462
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Quick Facts
Patent No.
US 12,252,778
App. No.
17/930,728
Granted
Mar 18, 2025
Kind
B2
Abstract

Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporate.

Claims (20)

1. A method of manufacturing a semiconductor device, the method comprising:

heating an organic source in an evaporator to provide a source gas on a substrate;

pumping the source gas, a derived molecule produced from the organic source, and air through an exhaust line connected to a chamber using a low vacuum pump and a high vacuum pump having a pumping pressure that is greater than that of the low vacuum pump;

using an analyzer to detect the derived molecule, the analyzer being connected to the exhaust line; and

determining whether or not a partial pressure of the derived molecule is equal has increased to a reference partial pressure,

wherein the exhaust line comprises:

a roughing line connecting the low vacuum pump to the chamber, bypassing the high vacuum pump, and having a roughing valve; and

a foreline branched from the roughing line between the low vacuum pump and the roughing valve, connecting the high vacuum pump and the low vacuum pump to the chamber sequentially, and having a first foreline valve between the high vacuum pump and the low vacuum pump, and

wherein the foreline comprises:

a first foreline connecting the high vacuum pump to the chamber, having a second foreline valve between the chamber and the high vacuum pump; and

a second foreline branched from the first foreline between the second foreline valve and the high vacuum pump, connected to the chamber, and having a third foreline valve, and

wherein the analyzer is connected to the second foreline between the third foreline valve and the chamber.

2. The method of claim 1 , further comprising, when the partial pressure of the derived molecule has increased to the reference partial pressure, outputting an interlock control signal to replace the evaporator.

3. The method of claim 1 , wherein:

the organic source has a molecular weight equal to or greater than 300, and

the derived molecule has a molecular weight within a range of 50 to 250.

4. The method of claim 1 , wherein the derived molecule includes anthracene, carbazole, thiophene, and/or aniline.

5. The method of claim 1 , wherein the reference partial pressure is 2.0×10 −10 Torr.

6. The method of claim 1 , wherein the derived molecule has a chemical composition that is different from that of the source gas.

7. The method of claim 1 , wherein the derived molecule is lighter than the source gas.

Priority Claims (2)
KR 10-2019-0032027 · Mar 20, 2019 · national
KR 10-2019-0075870 · Jun 25, 2019 · national
Continuity (2)
Division 16714344 · Dec 13, 2019
Related Publication 20220411916A1 · Dec 29, 2022
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