Optical transceiver and manufacturing method thereof
A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.
1. A semiconductor device comprising:
a photonic integrated circuit die comprising a groove;
a die electrically connected to the photonic integrated circuit die;
a dam located over the photonic integrated circuit die and adjacent to the die; and
an encapsulant extending from the dam to the die, wherein the encapsulant is located between the dam and the die in a direction parallel with a major surface of the die.
2. The semiconductor device of claim 1 , further comprising through vias located within the photonic integrated circuit die.
3. The semiconductor device of claim 1 , further comprising an underfill located between the photonic integrated circuit die and the die.
4. The semiconductor device of claim 1 , wherein the encapsulant extends between the die and the photonic integrated circuit die.
5. The semiconductor device of claim 1 , further comprising an optical fiber located within the groove.
6. The semiconductor device of claim 1 , further comprising a protrusion over the photonic integrated circuit die and adjacent to the dam.
7. The semiconductor device of claim 6 , further comprising an external connection located between the die and the photonic integrated circuit die, wherein the external connection and the protrusion have the same materials.
8. A semiconductor device comprising:
a photonic integrated circuit die;
a groove within the photonic integrated circuit die;
an electric integrated circuit die bonded to and electrically connected to the photonic integrated circuit die;
a semiconductor dam disposed over the photonic integrated circuit die; and
an insulating encapsulant encapsulating the electric integrated circuit die and in physical contact with the semiconductor dam, wherein the semiconductor dam separates the groove from the insulating encapsulant.
9. The semiconductor device of claim 8 , wherein the photonic integrated circuit die is separated from the electric integrated circuit die by an underfill material.
10. The semiconductor device of claim 9 , wherein the underfill material extends between the electric integrated circuit die and the semiconductor dam.
11. The semiconductor device of claim 8 , further comprising through vias extending through the photonic integrated circuit die to an external connection located on an opposite side of the photonic integrated circuit die from the electric integrated circuit die.
12. The semiconductor device of claim 8 , further comprising an optical fiber located within the groove.
13. The semiconductor device of claim 8 , further comprising a protrusion located over the photonic integrated circuit die between the groove and the electric integrated circuit die.
14. The semiconductor device of claim 8 , wherein the photonic integrated circuit die is bonded to the electric integrated circuit die using a hybrid bond.
15. A semiconductor device comprising:
a groove located within a photonic die;
an optical fiber located within the groove;
a semiconductor die bonded to the photonic die;
a dam located over the photonic die between the semiconductor die and the groove, wherein a top surface of the dam and a top surface of the semiconductor die are planar with each other; and
an encapsulant encapsulating the semiconductor die, at least a portion of the encapsulant located between the semiconductor die and the dam.
16. The semiconductor device of claim 15 , further comprising an underfill located between the photonic die and the semiconductor die.
17. The semiconductor device of claim 15 , further comprising through vias extending through the photonic die.
18. The semiconductor device of claim 15 , further comprising a protrusion adjacent to the dam.
19. The semiconductor device of claim 18 , wherein the photonic die is connected to the semiconductor die through a first set of first conductive materials, and wherein the protrusion comprises a second set of the first conductive materials.
20. The semiconductor device of claim 19 , wherein the first set of first conductive materials comprises solder.