Wafer bonding system and method of using the same

1. A method of bonding wafers, the method comprising:

coupling a first wafer to a first surface of a first wafer chuck and a second wafer to a second surface of a second wafer chuck in a chamber, wherein the first surface of the first wafer chuck comprises a plurality of zones, wherein a vacuum pressure of each zone of the plurality of zones is independently controllable from the rest of the plurality of zones, wherein the first surface is also a topmost surface of the first wafer chuck, and the second surface is also a bottommost surface of the second wafer chuck, and wherein a width of the first wafer chuck is greater than a width of the first wafer;

modulating pressure of the chamber to be at a first pressure by flowing in air/gases into the chamber or removing air/gases from the chamber; and

bonding the second wafer and the first wafer together by pressing the second wafer against the first wafer, wherein the bonding takes place at a first bonding wave velocity that is dependent on the first pressure.

2. The method of claim 1 , wherein the first pressure is in a range from 1×10 −2 mbar to 1520 torr.

3. The method of claim 1 , wherein the plurality of zones comprises at least nine zones.

4. The method of claim 1 , wherein prior to coupling the first wafer to the first surface of the first wafer chuck and the second wafer to the second surface of the second wafer chuck performing a plasma activation on a surface of at least one of the first wafer or the second wafer.

5. The method of claim 1 , wherein during the bonding the second wafer to the first wafer a push pin is used to apply pressure to the second wafer in order to contact the first wafer at a first point.

6. The method of claim 1 , wherein during the bonding the second wafer to the first wafer cooling water is flowed through the first wafer chuck and the second wafer chuck.

7. The method of claim 1 , wherein each of the plurality of zones is connected to a first vacuum pump through a respective pipe.

8. The method of claim 1 , wherein the second wafer chuck and the first wafer chuck are movable relative to each other.

9. A method comprising:

performing a plasma activation on a surface of at least one of a first package component or a second package component;

supporting the first package component on a wafer platen;

performing a cooling process to cool the first package component, wherein the cooling process comprises flowing water through the wafer platen;

after performing the cooling process, supporting the first package component on a first surface of a first wafer chuck in a chamber, wherein different zones of the first surface of the first wafer chuck have vacuum pressures that are independently controllable;

supporting the second package component on a second surface of a second wafer chuck in the chamber, the second wafer chuck facing the first wafer chuck; and

bonding the first package component to the second package component, wherein the bonding comprises:

modulating pressure of the chamber to be at a first pressure; and

applying pressure to the second package component using a push pin such that the second package component contacts the first package component at a first point and coupling of the second package component to the first package component takes place from the first point moving outwards towards edges of the first package component and the second package component at a first bonding wave velocity, wherein the first bonding wave velocity is based on the first pressure.

10. The method of claim 9 further comprising tuning a vacuum pressure of each zone of the first surface of the first wafer chuck to control mechanical properties of a portion of the first package component being supported on that zone.

11. The method of claim 10 , wherein the first wafer chuck comprises nine or more zones.

12. The method of claim 9 , wherein modulating pressure of the chamber comprises removing gases/air from the chamber through a gas outlet or flowing gases/air into the chamber through a gas inlet.

13. The method of claim 12 , wherein after modulating pressure of the chamber, the first pressure of the chamber is in a range from 1×10 −2 mbar to 1520 torr.

14. A method comprising:

securing a first wafer to a first surface of a top wafer chuck and a second wafer to a second surface of a bottom wafer chuck, the top wafer chuck and the bottom wafer chuck being disposed in a chamber, wherein the second surface of the bottom wafer chuck comprises a first plurality of zones;

tuning a young's modulus and a shear modulus of each portion of the second wafer that is secured to a respective zone of the first plurality of zones on the bottom wafer chuck;

moving the top wafer chuck or the bottom wafer chuck to align the first wafer with the second wafer;

applying pressure to the first wafer using a push pin disposed in the top wafer chuck to warp the first wafer and initiate contact between the first wafer and the second wafer at a first point, wherein during applying pressure to the first wafer using the push pin, bonding between the first wafer and the second wafer begins at the first point and proceeds outwards towards edges of the first wafer and the second wafer; and

during applying pressure to the first wafer using the push pin, modulating pressure of the chamber to be at a first pressure.

15. The method of claim 14 , wherein the first pressure is modulated to be higher than 760 torr.

16. The method of claim 14 , wherein the first pressure is modulated to be lower than 760 torr.

17. The method of claim 14 , wherein modulating pressure of the chamber to be at the first pressure comprises removing gas/air from the chamber through a gas outlet using a vacuum pump, and flowing gas/air into the chamber through a gas inlet.

18. The method of claim 14 , wherein the first surface of the top wafer chuck comprises a second plurality of zones, wherein a vacuum pressure of each zone of the second plurality of zones is independently controllable from the rest of the second plurality of zones.

19. The method of claim 18 , wherein each zone of the second plurality of zones is connected to a vacuum pump through a respective pipe.

20. The method of claim 14 , wherein tuning the young's modulus and the shear modulus of each portion of the second wafer comprises independently tuning a vacuum pressure of each zone of the first plurality of zones.