Photonic structures and integrated device for detecting and analyzing molecules
System and methods for analyzing single molecules and performing nucleic acid sequencing. An integrated device may include multiple pixels with sample wells configured to receive a sample, which when excited, emits radiation. The integrated device includes a surface having a trench region recessed from a portion of the surface and an array of sample wells, disposed in the trench region. The integrated device also includes a waveguide configured to couple excitation energy to at least one sample well in the array and positioned at a first distance from a surface of the trench region and at a second distance from the surface in a region separate from the trench region. The first distance is smaller than the second distance. The system also includes an instrument that interfaces with the integrated device. The instrument may include an excitation energy source for providing excitation energy to the integrated device by coupling to an excitation energy coupling region of the integrated device.
1. An integrated device comprising:
a substrate;
a cladding layer disposed on the substrate;
a waveguide, disposed in the cladding layer, having a first side facing the substrate and a second side opposite the first side;
a plurality of metal layers, disposed in the cladding layer, wherein a first metal layer of the plurality of metal layers is positioned at a distance closer to the substrate than the first side of the waveguide and the waveguide is positioned at a distance closer to the substrate than a second metal layer of the plurality of metal layers;
a conductive via connecting adjacent metal layers of the plurality of metal layers; and
an array of sample wells, disposed in the cladding layer, wherein a sample well of the array of sample wells is configured to receive a sample.
2. The integrated device of claim 1 , further comprising
a surface, of the cladding layer, having a trench region recessed from a portion of the surface; and
wherein the array of sample wells is disposed in the trench region, and
wherein the waveguide is positioned at a first distance from a bottom surface of the trench region and at a second distance from the surface of the integrated device in a region separate from the trench region, wherein the first distance is smaller than the second distance.
3. The integrated device of claim 2 , further comprising a sensor configured to receive emission energy emitted by the sample located in the sample well.
4. The integrated device of claim 3 , wherein the sensor is electrically connected to at least one metal layer of the plurality of metal layers.
5. The integrated device of claim 4 , wherein the at least one metal layer and the sensor are each electrically connected to the substrate.
6. The integrated device of claim 1 , further comprising at least one grating coupler configured to receive excitation energy from an excitation source separate from the integrated device and to direct excitation energy to the waveguide.
7. The integrated device of claim 6 , further comprising a reflector configured to reflect excitation energy towards the at least one grating coupler.
8. The integrated device of claim 6 , further comprising a splitter structure configured to receive excitation energy from the at least one grating coupler and direct excitation energy to a plurality of waveguides.
9. The integrated device of claim 8 , wherein the splitter structure includes a star coupler, a sliced grating coupler, or at least one multi-mode interference splitter.
10. The integrated device of claim 1 , wherein the first metal layer of the plurality of metal layers at least partially overlaps a second metal layer of the plurality of metal layers.
11. The integrated device of claim 1 , further comprising a dielectric layer, wherein the dielectric layer is disposed between the substrate and at least one metal layer of the plurality of metal layers.
12. A method of forming an integrated device comprising:
forming a waveguide over a substrate, the waveguide having a first side facing the substrate and a second side opposite the first side;
forming a plurality of metal layers over the substrate, wherein a first metal layer of the plurality of metal layers is positioned at a distance closer to the substrate than the first side of the waveguide, and the waveguide is positioned at a distance closer to the substrate than a second metal layer of the plurality of metal layers;
forming a conductive via connecting adjacent metal layers of the plurality of metal layers;
forming a cladding layer over the waveguide; and
selectively etching the cladding layer to form a sample well.
13. The method of claim 12 , further comprising forming one or more vias between the substrate and at least one metal layer of the plurality of metal layers.
14. The method of claim 13 , further comprising forming a dielectric layer between the at least one metal layer and the substrate.
15. The method of claim 14 , wherein forming the one or more vias between the substrate and the at least one metal layer comprises:
etching at least a portion of the dielectric layer to form an opening; and
filling the opening with a metal.
16. The integrated device of claim 1 , wherein the second metal layer is not connected to adjacent metal layers of the plurality of metal layers.
17. The method of claim 12 , wherein the second metal layer is not connected to adjacent metal layers of the plurality of metal layers.
18. The integrated device of claim 3 , wherein the sensor is further configured to detect the time of emission of the emission energy emitted by the sample located in the sample well.