IP Library Granted Patent US 12,265,489
Granted Patent B2
US 12,265,489 · App. 18/369,622 · Granted Apr 1, 2025

Communicating data with stacked memory dies

Inventors: Robert Nasry Hasbun (San Jose, CA); Timothy M. Hollis (Meridian, ID); Jeffrey P. Wright (Boise, ID); Dean D. Gans (Nampa, ID)
G06F13/1689G06F13/4068G06F13/42G06F13/4234G11C5/02G11C5/04G11C5/06G11C5/063G11C7/1012G11C7/1069G11C11/4093G11C11/4096
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Quick Facts
Patent No.
US 12,265,489
App. No.
18/369,622
Granted
Apr 1, 2025
Kind
B2
Abstract

Methods, systems, and devices for communicating data with stacked memory dies are described. A first semiconductor die may communicate with an external computing device using a binary-symbol signal including two signal levels representing one bit of data. Semiconductor dies may be stacked on one another and include internal interconnects (e.g., through-silicon vias) to relay an internal signal generated based on the binary-symbol signal. The internal signal may be a multi-symbol signal modulated using a modulation scheme that includes three or more levels to represent more than one bit of data. The multi-level symbol signal may simplify the internal interconnects. A second semiconductor die may be configured to receive and re-transmit the multi-level symbol signal to semiconductor dies positioned above the second semiconductor die.

Claims (41)

1. A method by a memory system, comprising:

receiving, at one or more components of the memory system, a first signal modulated using a first modulation scheme that includes only two levels;

generating, by the one or more components, a second signal comprising a first portion of bits of the first signal based at least in part on receiving the first signal;

generating, by the one or more components, a third signal comprising a second portion of bits of the first signal based at least in part on receiving the first signal;

generating, by the one or more components based at least in part on the second signal and the third signal, a fourth signal modulated using a second modulation scheme that includes three or more levels; and

transmitting, from the one or more components, the fourth signal.

2. The method of claim 1 , wherein generating the second signal is based at least in part on comparing the second signal with a reference signal.

3. The method of claim 2 , wherein generating the third signal is based at least in part on comparing the third signal with the reference signal.

4. The method of claim 1 , wherein generating the second signal comprises capturing bits on an edge of a first clock signal aligned with the first portion of bits, and generating the third signal comprises capturing bits on an edge of a second clock signal aligned with the second portion of bits.

5. The method of claim 1 , wherein generating the second signal comprises capturing bits on one of a rising edge or a falling edge of a clock signal aligned with the first portion of bits, and generating the third signal comprises capturing bits on the other of the rising edge or the falling edge of the clock signal aligned with the second portion of bits.

6. The method of claim 1 , further comprising:

deserializing the first signal after receiving the first signal, wherein generating the second signal is based at least in part on deserializing the first signal.

7. The method of claim 1 , wherein the fourth signal is transmitted to one or more memory dies of a plurality of memory dies.

8. The method of claim 1 , wherein the first signal is received from a host device.

9. A memory system, comprising:

a plurality of memory dies; and

one or more components coupled with the plurality of memory dies, the one or more components configured to:

receive a first signal modulated using a first modulation scheme that includes only two levels;

generate a second signal comprising a first portion of bits of the first signal based at least in part on receiving the first signal;

generate a third signal comprising a second portion of bits of the first signal based at least in part on receiving the first signal;

generate, based at least in part on the second signal and the third signal, a fourth signal modulated using a second modulation scheme that includes three or more levels; and

transmit the fourth signal.

10. The memory system of claim 9 , wherein the one or more components further comprise:

a deserializer configured to generate the second signal and generate the third signal;

a multiplexer configured to generate the fourth signal; and

a driver configured to transmit the fourth signal.

11. The memory system of claim 9 , wherein the one or more components are configured to generate the second signal based at least in part on comparing the second signal with a reference signal, and the one or more components are configured to generate the third signal based at least in part on comparing the third signal with the reference signal.

12. The memory system of claim 9 , wherein generating the second signal comprises capturing bits on an edge of a first clock signal aligned with the first portion of bits, and generating the third signal comprises capturing bits on an edge of a second clock signal aligned with the second portion of bits.

13. The memory system of claim 9 , wherein generating the second signal comprises capturing bits on one of a rising edge or a falling edge of a clock signal aligned with the first portion of bits, and generating the third signal comprises capturing bits on the other of the rising edge or the falling edge of the clock signal aligned with the second portion of bits.

14. The memory system of claim 9 , wherein the fourth signal has a serialization factor greater than 2 to 1.

15. The memory system of claim 9 , wherein the second signal excludes any bits of the second portion and the third signal excludes any bits of the first portion.

16. The memory system of claim 9 , wherein the fourth signal is transmitted to one or more memory dies of the plurality of memory dies.

17. The memory system of claim 9 , wherein the first signal is received from a host device.

18. A non-transitory computer-readable medium storing code, the code comprising instructions executable by one or more components of a memory system to:

receive, at the one or more components, a first signal modulated using a first modulation scheme that includes only two levels;

generate, by the one or more components, a second signal comprising a first portion of bits of the first signal based at least in part on receiving the first signal;

generate, by the one or more components, a third signal comprising a second portion of bits of the first signal based at least in part on receiving the first signal;

generate, by the one or more components based at least in part on the second signal and the third signal, a fourth signal modulated using a second modulation scheme that includes three or more levels; and

transmit, from the one or more components, the fourth signal.

19. The non-transitory computer-readable medium of claim 18 , wherein the fourth signal is transmitted to one or more memory dies of a plurality of memory dies.

20. The non-transitory computer-readable medium of claim 18 , wherein the first signal is received from a host device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2024
From: MICRON TECHNOLOGY, INC.
To: LODESTAR LICENSING GROUP LLC
Reel/Frame 068806/0545 →
Continuity (4)
Continuation 17864023 · Jul 13, 2022
Continuation 15977818 · May 11, 2018
Provisional Application 62567021 · Oct 2, 2017
Related Publication 20240004814A1 · Jan 4, 2024
References Cited (200)
US 5115450A · Arcuri · 1992 [cited by applicant]
US 5550881A · Sridhar et al. · 1996 [cited by applicant]
US 6067267A · Lo · 2000 [cited by applicant]
US 6075723A · Naiki et al. · 2000 [cited by applicant]
US 6292873B1 · Keaveny et al. · 2001 [cited by applicant]
US 6396329B1 · Zerbe · 2002 [cited by applicant]
US 6696995B1 · Foley et al. · 2004 [cited by applicant]
US 6772351B1 · Werner et al. · 2004 [cited by applicant]
US 6862224B2 · Stubbs · 2005 [cited by applicant]
US 6934824B2 · Woo et al. · 2005 [cited by applicant]
US 7124221B1 · Zerbe et al. · 2006 [cited by applicant]
US 7269212B1 · Chau et al. · 2007 [cited by applicant]
US 7308058B2 · Zerbe et al. · 2007 [cited by applicant]
US 7394715B1 · Tseng · 2008 [cited by applicant]
US 8054689B2 · Heo et al. · 2011 [cited by applicant]
US 8275027B2 · Abbasfar et al. · 2012 [cited by applicant]
US 8332578B2 · Frickey et al. · 2012 [cited by applicant]
US 8363707B2 · Hollis · 2013 [cited by applicant]
US 8397013B1 · Rosenband et al. · 2013 [cited by applicant]
US 8441870B2 · Kim · 2013 [cited by applicant]
US 8447908B2 · Bruce et al. · 2013 [cited by applicant]
US 8451147B2 · Mazumdar et al. · 2013 [cited by applicant]
US 8509321B2 · Alon et al. · 2013 [cited by applicant]
US 8582373B2 · Hollis · 2013 [cited by applicant]
US 8612713B2 · Kim et al. · 2013 [cited by applicant]
US 8750406B2 · Pan et al. · 2014 [cited by applicant]
US 8995596B1 · Loke et al. · 2015 [cited by applicant]
US 9071481B2 · Kaviani et al. · 2015 [cited by applicant]
US 9172567B2 · Hollis · 2015 [cited by applicant]
US 9182914B1 · Smith · 2015 [cited by applicant]
US 9270506B2 · Hollis · 2016 [cited by applicant]
US 9474034B1 · Baumgartner et al. · 2016 [cited by applicant]
US 9535831B2 · Jayasena et al. · 2017 [cited by applicant]
US 9568941B2 · Jung · 2017 [cited by applicant]
US 9712373B1 · Haywood · 2017 [cited by applicant]
US 9739939B1 · Quinlan · 2017 [cited by applicant]
US 9853642B1 · Tan · 2017 [cited by examiner]
US 9858215B1 · Solomon et al. · 2018 [cited by applicant]
US 9942028B1 · Dickson et al. · 2018 [cited by applicant]
US 10135643B1 · Kong · 2018 [cited by examiner]
US 10185499B1 · Wang et al. · 2019 [cited by applicant]
US 10281067B2 · Pearl et al. · 2019 [cited by applicant]
US 10381067B2 · Shaeffer et al. · 2019 [cited by applicant]
US 10459794B2 · Baek et al. · 2019 [cited by applicant]
US 20030070126A1 · Werner et al. · 2003 [cited by applicant]
US 20040186956A1 · Perego et al. · 2004 [cited by applicant]
US 20050007805A1 · Ware et al. · 2005 [cited by applicant]
US 20050089126A1 · Zerbe et al. · 2005 [cited by applicant]
US 20060008014A1 · Tamaki et al. · 2006 [cited by applicant]
US 20060095622A1 · Rosner et al. · 2006 [cited by applicant]
US 20060129728A1 · Hampel · 2006 [cited by applicant]
US 20060140287A1 · Alon et al. · 2006 [cited by applicant]
US 20060170453A1 · Zerbe et al. · 2006 [cited by applicant]
US 20060203765A1 · Laroia et al. · 2006 [cited by applicant]
US 20060267221A1 · Allen et al. · 2006 [cited by applicant]
US 20070002772A1 · Berkman et al. · 2007 [cited by applicant]
US 20070070669A1 · Tsern · 2007 [cited by applicant]
US 20070088995A1 · Tsern et al. · 2007 [cited by applicant]
US 20070153588A1 · Janzen · 2007 [cited by applicant]
US 20070290333A1 · Saini et al. · 2007 [cited by applicant]
US 20080019523A1 · Fuse et al. · 2008 [cited by applicant]
US 20080054493A1 · Leddige et al. · 2008 [cited by applicant]
US 20080080255A1 · Kagan et al. · 2008 [cited by applicant]
US 20080094086A1 · Kim · 2008 [cited by applicant]
US 20080137414A1 · Park et al. · 2008 [cited by applicant]
US 20080298143A1 · Chen et al. · 2008 [cited by applicant]
US 20080310491A1 · Abbasfar et al. · 2008 [cited by applicant]
US 20090059641A1 · Jeddeloh · 2009 [cited by applicant]
US 20090122904A1 · Jang et al. · 2009 [cited by applicant]
US 20090158101A1 · Abu-Rahma et al. · 2009 [cited by applicant]
US 20090303784A1 · Lowrey · 2009 [cited by applicant]
US 20100014364A1 · Laberge et al. · 2010 [cited by applicant]
US 20100115191A1 · Hampel et al. · 2010 [cited by applicant]
US 20100127758A1 · Hollis · 2010 [cited by applicant]
US 20100200998A1 · Furuta et al. · 2010 [cited by applicant]
US 20110032758A1 · Son et al. · 2011 [cited by applicant]
US 20110161568A1 · Bruce et al. · 2011 [cited by applicant]
US 20110208906A1 · Gillingham · 2011 [cited by applicant]
US 20110228614A1 · Shaeffer et al. · 2011 [cited by applicant]
US 20110249520A1 · Kim · 2011 [cited by applicant]
US 20110302475A1 · Eisenhuth et al. · 2011 [cited by applicant]
US 20120023363A1 · Shaeffer et al. · 2012 [cited by applicant]
US 20120051152A1 · Hollis · 2012 [cited by applicant]
US 20120059984A1 · Kang et al. · 2012 [cited by applicant]
US 20120063240A1 · Park · 2012 [cited by applicant]
US 20120134439A1 · Sato et al. · 2012 [cited by applicant]
US 20120154186A1 · Hassan · 2012 [cited by applicant]
US 20120235839A1 · Mazumdar et al. · 2012 [cited by applicant]
US 20120254472A1 · Ware et al. · 2012 [cited by applicant]
US 20130036259A1 · Huang · 2013 [cited by applicant]
US 20130234340A1 · Suh · 2013 [cited by applicant]
US 20130275830A1 · Park · 2013 [cited by applicant]
US 20130285739A1 · Blaquiere et al. · 2013 [cited by applicant]
US 20140016404A1 · Kim et al. · 2014 [cited by applicant]
US 20140071771A1 · Hollis · 2014 [cited by applicant]
US 20140192583A1 · Rajan et al. · 2014 [cited by applicant]
US 20140201600A1 · Ramamoorthy et al. · 2014 [cited by applicant]
US 20140218221A1 · Wortman et al. · 2014 [cited by applicant]
US 20140330994A1 · Mishra et al. · 2014 [cited by applicant]
US 20150092496A1 · Dutta et al. · 2015 [cited by applicant]
US 20150143037A1 · Smith · 2015 [cited by applicant]
US 20150146766A1 · Longo et al. · 2015 [cited by applicant]
US 20150187441A1 · Hollis · 2015 [cited by applicant]
US 20150199126A1 · Jayasena et al. · 2015 [cited by applicant]
US 20150261250A1 · Jung · 2015 [cited by applicant]
US 20150317277A1 · Wang et al. · 2015 [cited by applicant]
US 20150348491A1 · Kim et al. · 2015 [cited by applicant]
US 20150370655A1 · Tucek et al. · 2015 [cited by applicant]
US 20160006596A1 · Dickson et al. · 2016 [cited by applicant]
US 20160019171A1 · Shaeffer · 2016 [cited by applicant]
US 20160077765A1 · Kan · 2016 [cited by applicant]
US 20160134036A1 · Huang et al. · 2016 [cited by applicant]
US 20160314039A1 · Eisenhuth et al. · 2016 [cited by applicant]
US 20160320999A1 · Takemae · 2016 [cited by applicant]
US 20170147246A1 · Byun · 2017 [cited by applicant]
US 20170212695A1 · Hollis et al. · 2017 [cited by applicant]
US 20170242190A1 · Quinlan · 2017 [cited by applicant]
US 20170256300A1 · Vimercati et al. · 2017 [cited by applicant]
US 20180007226A1 · Holland · 2018 [cited by applicant]
US 20190087121A1 · Kobayashi et al. · 2019 [cited by applicant]
US 20200327057A1 · Hasbun et al. · 2020 [cited by applicant]
US 20210105161A1 · Hasbun et al. · 2021 [cited by applicant]
US 20210280225A1 · Hasbun et al. · 2021 [cited by applicant]
CN 101055552A · 2007 [cited by applicant]
CN 101310338A · 2008 [cited by applicant]
CN 101681674A · 2010 [cited by applicant]
CN 101715593A · 2010 [cited by applicant]
CN 101809738A · 2010 [cited by applicant]
CN 102099861A · 2011 [cited by applicant]
CN 101118782B · 2012 [cited by applicant]
CN 102341860A · 2012 [cited by applicant]
CN 102934171A · 2013 [cited by applicant]
CN 103140924A · 2013 [cited by applicant]
CN 103384158A · 2013 [cited by applicant]
CN 104318946A · 2015 [cited by applicant]
CN 105051824A · 2015 [cited by applicant]
CN 105191243A · 2015 [cited by applicant]
CN 107068197A · 2017 [cited by applicant]
EP 2061198A1 · 2009 [cited by applicant]
EP 2393086A2 · 2011 [cited by applicant]
EP 3673356A1 · 2020 [cited by applicant]
EP 3692447A1 · 2020 [cited by applicant]
EP 3692531A1 · 2020 [cited by applicant]
EP 3692532A1 · 2020 [cited by applicant]
JP 2010524089A · 2010 [cited by applicant]
JP 2011221134A · 2011 [cited by applicant]
JP 2014035788A · 2014 [cited by applicant]
JP 2014182864A · 2014 [cited by applicant]
JP 2016122832A · 2016 [cited by applicant]
KR 100934227B1 · 2009 [cited by applicant]
KR 1020140008745A · 2014 [cited by applicant]
KR 1020150106076A · 2015 [cited by applicant]
KR 1020150132101A · 2015 [cited by applicant]
TW 201735038A · 2017 [cited by applicant]
WO 9634393A1 · 1996 [cited by applicant]
WO 0150228A2 · 2001 [cited by applicant]
WO 2008076790A2 · 2008 [cited by applicant]
WO 2008143937A2 · 2008 [cited by applicant]
WO 2008151251A1 · 2008 [cited by applicant]
WO 2010053967A1 · 2010 [cited by applicant]
WO 2010111589A2 · 2010 [cited by applicant]
WO 2019070373A1 · 2019 [cited by applicant]
China National Intellectual Property Administration, “First Office Action,” issued in connection with Chinese Patent Application No. 201811124389.5, dated Aug. 31, 2021 (13 pages). [cited by applicant]
China National Intellectual Property Administration, “First Office Action,” issued in connection with Patent Application No. 201811142167.6, dated Feb. 21, 2020 (5 pages). [cited by applicant]
China National Intellectual Property Administration, “Second Office Action,” issued in connection with Chinese Patent Application No. 201811142167.6, dated Aug. 6, 2020 (10 pages). [cited by applicant]
Chinese Patent Office, “Office Action and Search Report”, issued in connection with Chinese Patent Application No. 201811122449.X dated Oct. 20, 2022 (9 pages). [cited by applicant]
Chinese Patent Office, “Office Action and Search Report”, issued in connection with Chinese Patent Application No. 201811006077.4 dated Oct. 20, 2022 (9 pages). [cited by applicant]
Chinese Patent Office, “Office Action and Search Report”, issued in connection with Chinese Patent Application No. 201811012240.8 dated Oct. 21, 2022 (15 pages). [cited by applicant]
Chinese Patent Office, “Notice of Allowance,” issued in connection with Chinese Patent Application No. 201811006077.4 dated May 31, 2023 (8 pages total; 4 pages original and 4 pages translation). [cited by applicant]
Chinese Patent Office, “Notice of Allowance,” issued in connection with Chinese Patent Application No. 201811012240 dated May 12, 2023 (4 pages). [cited by applicant]
Chinese Patent Office, “Notice of Allowance,” issued in connection with Chinese Patent Application No. 201811122449.X dated Jun. 13, 2023 (8 pages total; 4 pages original and 4 pages translation). [cited by applicant]
European Patent Office, “European search report,” issued in connection with European Patent Application No. 22203418.3 dated May 2, 2023 (15 pages). [cited by applicant]
European Patent Office, “Extended Search Report,” issued in connection with European Application No. 18865047.7, dated May 28, 2021 (10 pages). [cited by applicant]
European Patent Office, “Extended Search Report,” issued in connection with European Patent Application No. 18864031.2, dated Jun. 15, 2021 (8 pages). [cited by applicant]
European Patent Office, “Extended Search Report,” issued in connection with European Patent Application No. 18864321.7, dated Oct. 28, 2021 (8 pages). [cited by applicant]
European Patent Office, “Extended Search Report,” issued in connection with European Patent Application No. 18864503.0, dated Jun. 10, 2021 (9 pages). [cited by applicant]
European Search Report and Search Opinion received for EP Application No. 18864324.1, mailed on Mar. 29, 2021, 7 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US18/50445 , mailed on Dec. 24, 2018, 14 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US18/52000 , mailed on Jan. 16, 2019, 21 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US18/52006 , mailed on Jan. 16, 2019, 11 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US18/52705 , mailed on Jan. 10, 2019, 11 pages. [cited by applicant]
International Search Report and Written Opinion received for PCT Patent Application No. PCT/US2018/050434, mailed on Jan. 3, 2019, 10 pages. [cited by applicant]
Korean Intellectual Property Office, “Notice of Reason of Rejection,” issued in connection with Korean Patent Application No. 10-2020-7009607, dated Jan. 19, 2021 (11 pages). [cited by applicant]
Korean Intellectual Property Office, “Notice of Reasons for Rejection,” issued in connection with Korean Patent Application No. 10-2020-7010072, dated Jan. 26, 2021 (11 page). [cited by applicant]
Korean Intellectual Property Office, “Notice of Reasons for Rejection,” issued in connection with Korean Patent Application No. 10-2020-7008784, dated Jul. 16, 2021 (17 pages). [cited by applicant]
Korean Intellectual Property Office, “Notice of Reasons for Rejection,” issued in connection with Korean Patent Application No. 10-2020-7008924, dated Jan. 13, 2021 (7 pages). [cited by applicant]
Korean Patent Office, “Notice of Allowance”, issued in connection with Korean Patent Application No. 10-2021-7034166 dated Apr. 19, 2022 (4 pages). [cited by applicant]
Lee, Sungjin, et al., “Using Dynamic Voltage Scaling for Energy-Efficient Flash-based Storage Devices,” SOC Design Conference (ISOCC), 2010 International IEEE, Piscataway, NJ, USA, Nov. 22, 2010 (4 pages). [cited by applicant]
Lei, Qiusheng et al., “Design of Multimode Modulator Based on AD9954”, Electronic Design Engineering, No. 2, Jan. 20, 2011. [cited by applicant]
Nobukata, H. et al., “A 144-Mb, Eight-Level NAND Flash Memory with Optimized Pulsewidth Programing”, vol. 35, Issue 5, IEEE Journal Solid-State Circuits, May 2000, pp. 682-690. [cited by applicant]
Notice of Allowance received for Korean Patent Application No. 10-2020-7008784, mailed on Jan. 10, 2022, 4 pages (2 pages of English Translation and 2 pages of Original Document). [cited by applicant]
Notice of Allowance received for Korean Patent Application No. 10-2020-7010072, mailed on Jan. 20, 2022, 4 pages (2 pages of English Translation and 2 pages of Original Document). [cited by applicant]
Office Action received for Korean Patent Application No. 10-2021-7034166, mailed on Nov. 17, 2021, 8 pages (4 pages of English Translation and 4 pages of Original Document). [cited by applicant]
Ravi Motwani, “Signal Processing Techniques for Ensuring Fidelity of Back-end Signal Transmission in Flash Memory based Solid State Drives”, 2015 49th Asilomar Conference on Signals, Systems and Computers, Feb. 29, 2016. [cited by applicant]
Sundaram, R. et al., “A 128 Mb NOR flash memory with 3 MB/s program time and low-power write performance by using in-package inductor charge-pump”, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State … [cited by applicant]
The Korean Intellectual Property Office, “Notice of Allowance” issued in connection with Korean Patent Application No. 10-2020-7009510, dated Sep. 16, 2020 (5 pages with translation). [cited by applicant]
The Korean Intellectual Property Office, “Notice of Reasons for Rejection,” issued in connection with Korean Patent Application No. 10-2020-7009510, dated Jun. 15, 2020 (27 pages with translation). [cited by applicant]
Zhu, Siguo et al., “Research on the Implementation of Multichannel SPWM with FPGA Constructed Memory”, Power Electronic Technology, No. 11, Nov. 20, 2008. [cited by applicant]
European Patent Office, “EP Office Action,” issued in connection with European Patent Application No. 22203418.3 dated Nov. 7, 2024 (10 pages). [cited by applicant]
Chinese patent office, “China Office Action,” issued in connection with China Patent Application No. 202210694304.7 dated Dec. 11, 2024 (7 pages) (2 pages of English Translation and 5 pages of Original Document). [cited by applicant]