Granted Patent B2

US 12,266,542 · App. 18/435,244 · Granted Apr 1, 2025

Inventors: Wenbing Yang (Campbell, CA); Mohand Brouri (Brussels, BE); Samantha SiamHwa Tan (Newark, CA); Shih-Ked Lee (Fremont, CA); Yiwen Fan (Fremont, CA); Wook Choi (San Jose, CA); Tamal Mukherjee (Beaverton, OR); Ran Lin (Fremont, CA); Yang Pan (Los Altos, CA)

Assignee: Lam Research Corpporation

H01L21/32139H01L21/32136

Abstract

Claims (14)

1. A method for atomic layer etching a metal containing layer where the metal containing layer comprises at least one of ruthenium and molybdenum, comprising:

a) forming a patterned mask over the metal containing layer, wherein part of the metal containing layer is exposed by the patterned mask wherein part of the metal containing layer is covered by the patterned mask and is unexposed by the patterned mask;

b) modifying at least a region of a surface of the metal containing layer exposed by the patterned mask to form a modified metal containing region comprising at least one of ruthenium oxide and molybdenum oxide by exposing a surface of the metal containing layer to an oxygen containing modification gas, wherein part of the metal containing layer that is unexposed by the patterned mask remains an unmodified metal containing region; and

c) selectively removing the modified metal containing region with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas to remove the at least one of ruthenium oxide and molybdenum oxide.

2. The method, as recited in claim 1 , wherein the metal containing layer comprises ruthenium.

3. The method, as recited in claim 1 , wherein the metal containing layer is selectively etched with respect to the patterned mask to form features within the metal containing layer.

4. The method, as recited in claim 3 , wherein the features have a width of less than 10 nm.

5. The method, as recited in claim 3 , wherein the features are vias, wherein the vias have a line width roughness of less than about 2 nm.

6. The method, as recited in claim 1 , wherein the exposing the surface of the metal containing layer to an inert plasma does not remove the unmodified metal containing region.

7. The method, as recited in claim 1 , wherein the exposing the surface of the metal containing layer to the modification gas does not etch the metal containing layer.

8. A method for atomic layer etching a metal containing layer, comprising:

a) modifying at least a region of a surface of the metal containing layer to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region; and

b) selectively removing the modified metal containing region with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas, wherein the metal containing layer is over a patterned mask wherein the patterned mask forms a plurality of features and wherein the metal containing layer fills the plurality of features, and wherein a first plurality of the plurality of features is narrower than a second plurality of the plurality of features, and wherein the etching the metal containing layer etches back parts of the metal containing layer filling the plurality of features.

9. The method, as recited in claim 8 , wherein the metal containing layer filling the first plurality of the plurality of features is etched back at a same rate as the metal containing layer filling the second plurality of the plurality of features and wherein the features have a nonuniformity of a line of less than 5 nm.

Assignments (1)

Continuity (3)

References Cited (25)