Backside power rails and power distribution network for density scaling
A device comprises a first interconnect structure, a second interconnect structure, a first cell comprising a first transistor, a second cell comprising a second transistor, a first contact connecting a source/drain element of the first transistor to the first interconnect structure, and second contact connecting a source/drain element of the second transistor to the second interconnect structure. The first cell is disposed adjacent to the second cell with the first transistor disposed adjacent to the second transistor. The first and second cells are disposed between the first and second interconnect structures.
1. A device comprising:
a first cell comprising a first transistor;
a second cell comprising a second transistor, wherein the first and second cells are disposed adjacent to each other with the first and second transistors disposed adjacent to each other; and
an isolation structure disposed in a cell boundary region between the first and second cells;
wherein the isolation structure comprises a first portion disposed above first and second active channel structures of the respective first and second transistors, and a second portion disposed between the first and second active channel structures;
wherein the first portion of the isolation structure comprises a first width which is substantially equal to a spacing between the first and second active channel structures;
wherein the second portion of the isolation structure comprises a second width which is less than the first width;
wherein a first space between the second portion of the isolation structure and the first active channel structures of the first transistor comprises metallic material of a first metal gate structure of the first transistor, and a second space between the second portion of the isolation structure and the second active channel structures of the second transistor comprises metallic material of a second metal gate structure of the second transistor; and
wherein the first space and the second space define respective gate extension lengths of the first and second transistors.
2. The device of claim 1 , wherein the second width is no greater than about 10 nanometers, and wherein the gate extension lengths are no greater than about 10 nanometers.
3. The device of claim 1 , further comprising a gate cut element disposed on the first portion of the isolation structure, wherein the gate cut element and the isolation structure are configured to isolate the first and second metal gate structures of the respective first and second transistors.
4. The device of claim 3 , wherein the gate cut element is disposed within the metallic material of the first and second metal gate structures.
5. The device of claim 1 , wherein the first and second transistors comprise one of an adjacent pair of N-type field-effect transistors and an adjacent pair of P-type field-effect transistors.
6. The device of claim 1 , wherein the first and second active channel structures comprise stacked active nanosheet channel structures.
7. The device of claim 1 , further comprising:
a first interconnect structure;
a second interconnect structure;
a first contact connecting a source/drain element of the first transistor to the first interconnect structure; and
a second contact connecting a source/drain element of the second transistor to the second interconnect structure;
wherein the first and second cells are disposed between the first and second interconnect structures.
8. The device of claim 7 , wherein:
the first interconnect structure comprises a signal network; and
the second interconnect structure comprises a power distribution network.
9. The device of claim 7 , further comprising a lateral interconnect which extends from the first cell to the second cell, wherein the lateral interconnect is disposed between the first interconnect structure and the source/drain element of the second transistor in the second cell, and wherein the lateral interconnect connects the first contact to a signal track of the first interconnect structure in the second cell.
10. A device, comprising:
a first cell comprising a first transistor which comprises a first stack of channel layers;
a second cell comprising a second transistor which comprises a second stack of channel layers;
wherein the first and second cells are disposed adjacent to each other;
wherein the first and second transistors comprise a forksheet field-effect transistor pair with an insulating wall disposed between the first and second stack of channel layers of the respective first and second transistors;
wherein the insulating wall is aligned to a cell boundary between the first and second cells; and
wherein a width of the insulating wall disposed between the first and second stack of channel layers of the respective first and second transistors defines a cell-to-cell spacing between the first and second cells.
11. The device of claim 10 , wherein the first and second transistors comprise one of a pair of N-type nanosheet field-effect transistors and a pair of P-type nanosheet field-effect transistors.
12. The device of claim 10 , further comprising:
a first interconnect structure;
a second interconnect structure;
a first contact connecting a source/drain element of the first transistor to the first interconnect structure; and
a second contact connecting a source/drain element of the second transistor to the second interconnect structure;
wherein the first and second cells are disposed between the first and second interconnect structures.